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IRFI520G
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
[Internationall
:ltdd.hit
Rectifier
PD-9.830
TIFl520G
HEXFET® Power MOSFET
0 Isolated Package
0 High Voltage lsolation= 2.5KVRMS © D
O Sink to Lead Creepage Dist.= 4.8mm VDSS = 100V
o 175°C Operating Temperature
0 Dynamic dv/dt Rating G Fr- RDS(on) LTJ, 0.279
0 Low Thermal Resistance H--
S ID = 7.2A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness, a
The TO-220 Fullpak eliminates the need for additional insulating hardware in agiib'
commerciaI-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and _iiiiis,
external heatsink. This isolation is equivalent to using a 100 micron mica 'i'iiiiiiii.
barrier with standard TO-220 product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing, TO-220 FULLPAK
Absolute Maximum Ratings
Parameter Max. Units
Io @ Tc = 25°C Continuous Drain Current, Ves @ 10 V 7.2
In @ To = 100°C Continuous Drain Current, VGs © 10 V 5.1 A
IoM Pulsed Drain Current C) 29
PD @ To = 25°C Power Dissipation 37 W
Linear Derating Factor 0.24 WPC
Vos Gate-to-Source Voltage $20 V
EAS Single Pulse Avalanche Energy © 36 md
IAR Avalanche Current (i) 7.2 A
EAR Repetitive Avalanche Energy (D 3.7 mJ
dv/dt Peak Diode Recovery dv/dt © 5.5 V/ns
T, Operating Junction and -55 to +175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbf-in (1.1 Nam)
Thermal Resistance _
Parameter Min. Typ. Max. Units
FUc J.unc.t.ion-.to-fae - - 4.1 o C /W
Ram Junction-to-Ambient - - 65
IRFI520G B3R
Electrical Characteristics tii) Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 100 - - V Vas=OV, ID: 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.13 - VPC Reference to 25°C, In: 1mA
Fusion) Static Drain-to-Source On-Resistance - - 0.27 Cl VGs=10V, ID=4.3A ©
VGSOh) Gate Threshold Voltage 2.0 - 4.0 V Vns=Vss, ID: 250PA
gfs Forward Transconductance 2.3 - - S Vos=50V, ID=4.3A ©
loss Drain-to-Source Leakage Current - - 25 pA VDs=100V, VGS=0V
- - 250 VDs=8OV, VGS=0V, TJ=150°C
less Gate-to-Source Forward Leakage -...... - 100 n A Vss=20V
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
Qg Total Gate Charge - - 16 Io=9.2A
Qgs Gate-to-Source Charge - - 4.4 nC lhos=80V
di Gate-to-Drain ("Miller") Charge - - 7.7 Ves=10V See Fig, 6 and 13 co
td(on) Turn-On Delay Time - 8.8 - VDD=50V
tr Rise Time - 30 - ns lro---9.2A
td(or) Tu rn-Off Delay Time - 19 - Re=18§2
t, Fall Time -- 20 - Flo=5.2£1 See Figure 10 ©
tu, Internal Drain Inductance - 4.5 - 232:3 $856,133 D
nH from package GEE
Ls Internal Source Inductance - 7.5 - Ind center df
die contact s
Ciss Input Capacitance - 360 - Ves=0V
Coss Output Capacitance - 150 - PF Vos--, 25V
Crss Reverse Transfer Capacitance - 34 - f=1.0MHz See Figure 5
C Drain to Sink Capacitance - 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 7 2 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current - _ 29 in'tegral rgverge G
(Body Diode) co p-n junction diode. s
VSD Diode Forward Voltage - - 2.5 V Tu=25oC, |s=7.2A, Nur-IN ©
trr Reverse Recovery Time - 130 260 ns TJ=25°C, IF=9.2A
er Reverse Recovery Charge -.h.... 0.65 1.3 PC dildt=100A/prs ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
CO Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=25V, starting TJ=25°C, L=1.0mH
RG=25.Q. |As=7.2A (See Figure 12)
© ISDSQ2A, di/de110A/ps, VoosVaaRpss,
TJS175°C
CED t=60s, f=60Hz
© Pulse width f 300 us; duty cycle 32%.
