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IRFI620G
200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
bttennatiionall
1:212 Rectifier
PD-9.832
IRFI620G
HEXFET® Power MOSFET
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
Isolated Package
High Voltage Isolation-- 2.5KVRMS ©
Sink to Lead Creepage Dist.= 4.8mm
Dynamic dv/dt Rating
Low Thermal Resistance
D VDSS = 200V
RDS(on) =...' 0.809
s ID = 4.1A
on-resistance and cost-effectiveness.
The T0420 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica
barrier with standard TO4t20 product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing.
Absolute Maximum Ratings
'igtiib'
'iRiii(i1iess;
TO-220 FU LLPAK
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Vas © 10 V 4.1
In @ Tc = 100°C Continuous Drain Current, VGs @ 10 V 2.6 A
IDM Pulsed Drain Current C) 16
Pp @ To =. 25°C Power Dissipation 30 W
Linear Derating Factor 0.24 W/°C
Ves Gate-to-Source Voltage :20 V
EAS Single Pulse Avalanche Energy © 100 ml
IAR Avalanche Current C) 4.1 A
EAR Repetitive Avalanche Ene_rgy C) 3.0 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction and -55 to +150 -
Tsra Storage Temperature Range ot
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1 Nom) -
Thermal Resistance
Parameter Min. Typ. Max. Units
Rm Junction-to-Case - - 4.1 o C /W
Ram Junction-to-Ambient - - 65
IRFI620G
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 200 - - V Vtss=OV, ID: 250WA
Awamoss/ATJ Breakdown Voltage Temp. Coefficient - 0.29 - V/°C Reference to 25°C, ID: 1mA
Rosmm Static Drain-to-Source On-Resistance - - 0.80 n VGs=1OV, |D=2.5A ©
VGS(th) Gate Threshold Voltage 2.0 - 4,0 V bbs=Vss, '0: 250WA
ggs Forward Transconductance 1.5 - - S Vos=50V, lo=2.5A (O
loss Drain-to-Source Leakage Current - - 25 pA Vios=200V, l/ss-HN
- - 250 Vos=160V, VGs=OV, TJ=12500
less Gate-to-Source Forward Leakage - - 100 n A VGs=20V
Gate-to-Source Reverse Leakage - -.. -100 Vas---20V
Qg Total Gate Charge - - 14 |D=4.8A
Qgs Gate-to-Source Charge - - 3.0 no Vos=160V
di Gate-to-Drain ("Miller") Charge - - 7.9 VGs=10V See Fig, 6 and 13 C4)
tam) Turn-On Delay Time - 7.2 - VDD=1OOV
t, Rise Time - 22 - ns ID=4.8A
tum) Turn-Off Delay Time .-.-. 19 - Re=189
tt Fall Time - 13 -.... RD=209 See Figure 10 G)
La Internal Drain Inductance - 4.5 - [trt),',)'.)')',").') D
nH from package (r;
Ls Internal Source Inductance - 7.5 - Ind center 6f
_ die contact 5
Ciss Input Capacitance - 260 - , Ves=OV
Coss Output Capacitance - 100 - pF V03: 25V
Crss Reverse Transfer Capacitance - 30 - f=1.0MHz See Figure 5
C Drain to Sink Capacitance - 12 -..-.. pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 4 1 MOSFET symbol D
(Body Diode) . A showing the 'ire)
ISM Pulsed Source Current - - 16 integral reverse G (lo-l 1
(Body Diode) C) p-njunction diode. s _
Vsn Diode Forward Voltage - - 1.8 V Tr--25oC, Is=4.1A, Ves=0V a)
tn Reverse Recovery Time - 150 300 ns TJ=25°C, IF=4.8A
er Reverse Recovery Charge - 0.91 1.8 pK di/dt=100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is neglegible (turn-on is dominated by Ls+Lo)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=50V, starting TJ=25°C, L=8.9mH
Rs=25f2, |As=4.1A (See Figure 12)
TJS150°C
© Ists.2A, di/dts95A/ps, VDDSV(BR)DSS,
co 1:608. f=6OHz
© Pulse width 5 300 us; duty cycle E2%.
