IC Phoenix
 
Home ›  II30 > IRFI734G,450V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
IRFI734G Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
IRFI734GIRN/a1850avai450V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package


IRFI734G ,450V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageInternational PD-9.1001 [:)Esit] Rectifier FFI734G HEXFET® Power MOSFET 0 Isolated Package ..
IRFI740 ,Power MOSFET(Vdss=400V/ Rds(on)=0.55ohm/ Id=5.4A)applications. The moulding compound used provides a high isolation capability and a low thermal re ..
IRFI740B ,400V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 10A, 400V, R = 0.54Ω @V = 10 VDS(on) ..
IRFI740G ,400V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a high isolation capability and a low thermal re ..
IRFI740GLC ,400V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The TO-220 Fullpak eliminates the need for additional insulating hardware. The ..
IRFI740GPBF ,400V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packagePD-9.651A IRF|74OG International EOR Rectifier HEXFET6 Power MOSFET Isolated Package ..
ISL6522IRZ-T , Buck and Synchronous Rectifier Pulse-Width Modulator (PWM) Controller
ISL6523CB ,VRM8.5 Dual PWM and Dual Linear Power System ControllerISL6523TMData Sheet January 2002 FN9024.1VRM8.5 Dual PWM and Dual Linear Power
ISL6524 ,PWM Controller and Triple Linear Reg, VRM8.5, 5-Bit DAC, Core ?%, Linears ?%applications. The IC integrates one PWM  Drives N-Channel MOSFETscontroller and three linear contr ..
ISL6524A ,PWM Controller and Triple Linear Reg, VRM8.5, 5-Bit DAC, Core ?%, Linears ?%applications. The IC integrates one PWM • Drives N-Channel MOSFETscontroller and three linear contr ..
ISL6524ACB ,VRM8.5 PWM and Triple Linear Power System ControllerISL6524A®Data Sheet March 2002 FN9064VRM8.5 PWM and Triple Linear Power
ISL6524CB ,VRM8.5 PWM and Triple Linear Power System ControllerISL6524TMData Sheet January 2002 FN9015.1VRM8.5 PWM and Triple Linear Power


IRFI734G
450V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
(International
Rectifier
PD-9.1001
lFlFl734G
HEXFET® Power MOSFET
0 Isolated Package
0 High Voltage Isolation--. 2.5KVRMS ©
0 Sink to Lead Creepage Dist.-= 4.8mm
0 Dynamic dv/dt Rating
0 Low Thermal Resistance
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
D Gss = 450v
" RDS(on) = 1.29
s ID = 3.4A
on-resistance and cost-etfectiveness.
The TO-22O Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica
barrier with standard TO-220 product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
- T' . Parameter Max. A I ' " Units"
lo © To = 25°C Continuous Drain Current, I/tss © 10 V 3.4 _ -
ID o To = 100°C Continuous Drain Current, Ves @ 10 V - 2.1 A
ioM Pulsed. Drain Current co 14 '
_PD @ Tc = 25°C iPower Dissipation, . 35 . IN
i Linear Derating Factor 0_._28 IN/oc
Ves w (iate-to-Sourte Voltage _ $20 - V
EAS A Single Pulse Avalanche Energy 2) lop _ A rn)
i IAR l Avalanche Current CI), _ al - A
EAR Repetitive Avalanche Energy (1) 3.5 _ I m]
dv/dt Peak Diode Recovery dv/dt O) 4.0 V/ns
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range - r’C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
L Mounting Torque, 6-32 or M3 screw 10 lbhin (1.1 N-m) L
Thermal Resistance
. T Parameter Min Typ ll Max Units-]
Hmc Junction-to-Case - - l 3.6 4 "CAN 1
Ram _junction-to-Ap'ttoient - - l es, - _
IRFI734G 14212
Elegtrical Characteristics tit To = 25°C (unless otherwise specified)
I Parameter . _ Min. Typ. Max. Units I Test Conditions
V(BR)Dss Drain-tp-Source Breakdown Voltage I 450 - - V VGs=0V, lo: 250pA -
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient 3 - 0.63 - . VPC ‘ Reference to 25N, l9: 1mA
Rosm) _ Static Drain-to-Source On-Resistance - - 1.2 Q 'vss=10V, |o=2.0A CO
VGS(th) - _ Gate Thresholdyoltage - 2.0 . - 4.0 _ V VDS=VGS. ID: 250pA
1 ggs Forward TranscpnducttTce _ _ ' 1.5 - - S l Vos=50V, ID=2.OA ©
loss Drain-to-Source Leakage Current '. ='L__"r - 2: “A '.yps=450V, Var-UN
- I - - 250 VDs=360V, Ves=0V, TJ=125°C
lass Gate-to-Source Forward_ Leakage C- - 100 q n A _\(Gs=20V
- Gate-to-Source Reverse Leakage - - -100 I VGs=-20V i
Tal- - 1Tota1 Gate Charge . I : l n 45 I 10:4.9A '
Ogs " Tsate-to-goes/charge I - ' - 6.6 1 nC I Vos=360V
di A Gate-to-Drain ("Miller") Charge. ' - _ - 24 VGs=10V See Fig. 6 and 13 ©
Mon, T hTurn-On Délay Time --__ - 5.9 - Vorr--225V _
tr Rise Time - 22 - ns 10:4.9A
3“ch Turn-Off Delay Time - 40 - 83:12!)
t, Fall Time. - _ 21 - Rro--45n See Figure 10 ©
Lo \ Internal Drain Inductance _ 4.5 - g %3. 2'31: i (i-iii,''
_ f _ _ nH I from package a 1 t
Ls Internal Source Inductance - 7.5 - Ind center Of
_ 1 _[ .. die contact s
ciss Input Capacitance . l T- _eao t " sz=ov
Cost, _ 1 Output Capacitance _- . 190 1 L--] pF ' V03: 25V
Crss l. Reverse Transfer Capacitance . - 75 T- f=1.0MHz See Figure 5
C Drain to Sinkfapacitance, :_L,. 12 i - pF, i f=1.0MHz
Source-Drain Ratings and Characteristics
- l Parameter " Min. ; Typ. Max. Units Test Conditions
ls Continuous Source Current - , - 3 4 MOSFET symbol D
- V (Body Diode) . A showing the
ISM 1 Pulsed Source Current - - 14 i integral reverse G
. I (Body Diode) co _ F l p-n junction.diode. s
_VSD Diode Forward Voltage - - 2.0 V 'Tu=25oC, Is=4.9A, VGs=OV ©
Ltrr . Reverse Recovery Time - 460 690 ns Tr--25oC, IF=4.9A
8n 1 Reverse Recovery Charge - 1.8 l 2.7 wc _di/dt=100A/us Cd)
I ton TForward Iurn-On Time i Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lo)
Notes:
C) Repetitive rating; pulse width limited by Ci', 13054.9A, di/de80A/ps, VDDSmeoss, © t=60s, f=60Hz
max. junction temperature (See Figure 11) TJS150°C
© VDD=50V, starting TJ=25°C, L=15mH a'; Pulse width s 300 us; duty cycle 32%.
RG=25£2, |As=3.4A (See Figu re 12)
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED