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IRF|74OG
International
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HEXFET6 Power MOSFET
Isolated Package
..
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IRFI740
Power MOSFET(Vdss=400V/ Rds(on)=0.55ohm/ Id=5.4A)
PD-9.651A
International
TOR Rectifier IRFI74OG
HEXFET6 Power MOSFET
0 Isolated Package
0 High Voltage Isolation:-- 2.5KVRMS ©
o Sink to Lead Creepage Dist.= 4.8mm
0 Dynamic dv/dt Rating
0 Low Thermal Resistance
RDS(on) = 0.559
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best Combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica
barrier with standard TO-220 product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing. T0220 FULLPAK
Absolute Maximum Ratings
Parameter Max. Units
in @ To = 25°C Continuous Drain Current, l/tss @ 10 V 5.4
in @ To = 100°C Continuous Drain Current, Ves @ 10 V 3.4 A
low. Pulsed Drain Current Ci) 22
Pro @ To = 25°C Power Dissipation 40 W
Linear Derating Factor 0.32 W/°C
Vas ' Gate-to-Source Voltage :20 V
EAs Single Pulse Avalanche Energy 2 390 ml
IAR 'Avaianche Current C) 5.4 A
EAR Repetitive Avalanche Energy (i) 4.0 mJ
dv/dt Peak Diode Recovery dv/dt © 4.0 _ V/ns
To Operating Junction and -55 to +150 l
Tsrs Storage Temperature Range °C
1 Soldering Temperature, for 10 seconds 300 (1.6mm from case)
i Mounting Torque, 6-32 or MS screw 10 lbf-in (1.1 N.m)
Thermal Resistance
Parameter Min. Typ. Max. 1 Units
l RBJC Junction-to-Case - - 3.1 °CNV
,l Ram Junction-to-Ambient - - 65
IRFl740G
Eileetrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ, Max. Units Test Conditions
V(gmnss Drain-to-Source Breakdown Voltage 400 - - V VGS=0V, lo: 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.49 - VPC Reference to 25''C, In: 1mA
Rosmn) 3 Static Drain-to-Source On-Resistance - - 0.55 Q Vss---10V, |D=3.2A CO
Veson) f Gate Threshold Voltage 2.0 - 4.0 V VDs=VGs, ID: 250PA
gfs Forward Transconductance 3.6 - -.. S VDs=50V, lo=3.2A ©
loss Drain-to-Source Leakage Current - - 25 pA Vos=400V, VGSzOV
- - 250 Vos=320V, VGs=0V, TJ=12500
less Gate-to-Source Forward Leakage - - 100 n A VGs=20V
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
ch Total Gate Charge - - 66 ID=10A
Qgs Gate-to-Source Charge - - 10 " Vos=320V
di Gate-to-Drain ("Miller") Charge - - 33 VGs=10V See Fig. 6 and 13 C9
two") Tum-On Delay Time - 14 - Voo=200V
t, Rise Time - 25 - ns |o=10A
Mom Turn-Off Delay Time - 54 - Rtr--9An
tf Fall Time - 24 - Ro=20§2 See Figure 10 CO
Lo Internal Drain Inductance - 4.5 - t $3193; stiand, ') D
nH from package GE
Ls Internal Source Inductance - 7.5 - and center 6f
die contact 5
Ciss Input Capacitance - 1200 - Ves=0V
Cass Output Capacitance - 230 - pF Vos-- 25V
Crss Reverse Transfer Capacitance - 48 - f=1.0MHz See Figure 5
C Drain to Sink Capacitance - 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 5 4 MOSFET symbol D
(Body Diode) ' A showing the L,-a;
ISM Pulsed Source Current - - 22 integral rgverse G (trl,
(Body Diode) co p-n junction diode. s
Vso Diode Forward Voltage - - 2.0 V TJ=25°C, ls=5.4A, VGs=0V C4)
trr Reverse Recovery Time - 330 730 ns TJ=2500, IF=10A
er Reverse Recovery Charge - 2.8 6.6 “C dildt=100A/ps (ii)
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
C) Repetitive rating; pulse width limited by
max, junction temperature (See Figure 11)
C) VDD=50V, starting TJ=25°C, L=23mH
Re=25§2, lAs=5.4A (See Figure 12)
C3) ISDS1OA, di/dts120A/ps, VDDSV(BR)DSS.
TJS150°C
© t=60s, f=60Hz
g) Pulse width S 300 ps; duty cycle 32%.
