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IRFI820G
500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Ilrttennatiityrtall
"P, Rectifier
PD-9.641A
ilRFl820G
HEXFET® Power MOSFET
q Isolated Package
0 High-Voltage Isolation--- 2.5KVRMS C5)
0 Sink to Lead Creepage Dist.= 4.8mm
0 Dynamic dv/dt Rating
0 Low Thermal Resistance
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
Vass = 500V
RDS(on) = 3.on
|D=2.1A
on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica
barrier with standard TO-220 product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing.
Absolute Maximum Ratings
TO-220 FU LLPAK
Parameter Max. Units
ID © Tc = 25°C Continuous Drain Current, Vas © 10 V 2.1
In @ To = 100°C Continuous Drain Current, Vas © 10 V 1.3 A
IDM Pulsed Drain Current C) 8.4
Po @ Tc = 25°C Power Dissipation 30 W
Linear Derating Factor 0.24 WPC
Vss Gate-to-Source Voltage 120 V
EAS Single Pulse Avalanche Energy © 110 mJ
IAR Avalanche Current (i) 2.1 A
EAR Repetitive Avalanche Energy C) 3.0 mJ
dv/dt Peak Diode Recovery dv/dt © 3.5 V/ns
Tu Operating Junction and -55 to +150
TSTG Storage Temperature Range 00
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbf-in (1.1 Mom) i
Thermal Resistance .
Parameter Min. Typ. Max, Units .
Redo Junction-to-Case - - 4.1 C) C NV
Rem Junction-to-Ambient - - 65 -
IRFl820G
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(snwss Drain-to-Source Breakdown Voltage 500 - - V VGs=0V, ID: 250pA
AViimyass/ATu Breakdown Voltage Temp. Coefficient - 0.59 - V/°C Reference to 25°C, 10: 1mA
Rns(on) Static Drain-to-Source On-Resistance - - 3.0 n Vss=10V, 19:1.3A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos--Vss, ID: 250pA
Os Forward Transconductance 1.5 - - S Vos=50V, 10:1.3A ©
loss Drain-to-Source Leakage Current - H 25 WA VDS=500V' I/ss-MN
- - 250 Vns=400V, Ves=0V, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A Vss=201/
Gate-to-Source Reverse Leakage - - -,100 VGs=-20V
th Total Gate Charge - - 24 ID=2.1A
Qgs Gate-to-Source Charge - - 3.3 nC Vos=400V
di Gate-to-Drain ("Miller") Charge - -- 13 VGs=10V See Fig. 6 and 13 co
tum.) Turn-On Delay Time - 8.0 - Voro--250V
tr Rise Time - 8.6 - ns lo=2.1A
tum) Turn-Off Delay Time - 33 - RG=1BQ
t Fall Time - 16 - Ro=120§2 See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - 3:21:33 ltilnd. ') D
nH from package SE
Ls Internal Source Inductance - 7.5 - Ind center Of 'ii)
die contact s
Ciss Input Capacitance - 360 - I/ss-HN
Coss Output Capacitance - 92 --.r. pF V03: 25V
Crss Reverse Transfer Capacitance - 37 - f=1.0MHz See Figure 5
C Drain to Sink Capacitance - 12 -.... pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 2 1 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current - - 8.0 integral rever§e G
(Body Diode) Co) p-n junction diode. S
Van Diode Forward Voltage - - 1.6 V TJ=25°C, 13:2.1A, Vss=0V ©
tn Reverse Recovery Time - 260 520 ns TJ=25°C, |F=2.1A
ar, Reverse Recovery Charge - 0.70 1.4 no di/dt-s-IMA/gs ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
(IC) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© Voo=50V, starting TJ=25°C, L=44mH
Rtr--.25n, lAs=2.1A (See Figure 12)
© ISDS2.1A, di/dtsE0A/ws, VDDSV(BR)DSS,
TJS150°C
© t=60s, f=60Hz
© Pulse width I 300 us; duty cycle 32%.
