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ISBR
Rectifier
PD-9.838
IIRFl9630G
HEXFET® Power MOSFET
q Isolated ..
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IRFI9520G
-100V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
International
1:212 Rectifier
PD-9.835
IlRFl9520G
HEXFET® Power MOSFET
o Isolated Package
High Voltage Isolation, 2.5KVRMS ©
Sink to Lead Creepage Dist.= 4.8mm
P-Channel
Dynamic dv/dt Rating
0 175°C Operating Temperature
o Low Thermal Resistance
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
VDSS = -100V
ID TL"'; -5.2A
RDS(on) = 0.609
on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica
barrier with standard TO-220 product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter Max. Units
ID © Tc = 25°C Continuous Drain Current, Vas @ -10 V -5.2
In @ To = 100°C Continuous Drain Current, Vss © ~10 V -3.6 A
Irv, Pulsed Drain Current co -21
Po @ To = 25°C Power Dissipation 37 W
Linear Derating Factor 0.24 WPC
l/tss Gats-to-Spurce Voltage $20 V
EAs Single Pulse Avalanche Energy © 300 md
IAR Avalanche Current T -5.2 A
EAR Repetitive Avalanche Energy C) 3.7 mJ
dv/dt Peak Diode Recovery dv/dt a -5.5 V/ns
To Operating Junction and -55 to +175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm trom case)
i Mounting Torque, 6-32 or M3 screw 10 lbf-in (1.1 N.m)
Thermal Resistance
Parameter Min. Typ, Max, Units
Rate J.um1ion-.to-fay, - - 4.1 °C/W
Rm Junction-to-Ambient - - 65
IRF|9520G
Electrical Characteristics Iii) Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -100 - - V VGs=0V, Io=-250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - -0.10 - VPC Reference to 25°C, lo=-1mA
RDS(on) Static Drain-to-Source On-Resistance _.- - 0.60 n Var-MOV, lo=~3.1A G)
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V Vms=Vss, lio=-25th1A
gis Forward Transconductance 1.9 - - S Vos=-50V, lo=-3AA ©
loss Drain-to-Source Leakage Current - - -100 HA Vos=-100V, Var-UN
' - - -500 VDs=-80V. Vas=OV, TJ=150°C
less Gate-to-Source Forward Leakage - - -100 n A Vas=-20V
Gate-to-Source Reverse Leakage .-..- - 100 Vss=20V
Qg Total Gate Charge - - 18 liy=-6.8A
Qgs Gate-to-Source Charge - - 3.0 nC Vos=-80V
di Gate-to-Drain ("Miller") Charge - - 9.0 VGs=-1OV See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 9.6 - Vur=-50V
tr Rise Time - 29 - n s lo=-6.8A
tam) Turn-Off Delay Time - 21 - Rs.--18n
ti Fall Time - 25 - RD=7.1Q See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - ttitg,elilltilnd.') D
nH irom package GE
Ls Internal Source Inductance - 7.5 - and center 6t H3
die contact s
Ciss Input Capacitance - 390 - VGs=0V
Coss Output Capacitance - 170 - pF VDS=-25V
Crss Reverse Transfer Capacitance - 45 - f=1.0MHz See Figure 5
C Drain to Sink Capacitance - 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
i Parameter Min. Typ. Max. Units Test Conditions
ls (Continuous Source Current - - Ai 2 MOSFET symbol D
(Body Diode) . A showing the _'tirir)
ISM Pulsed Source Current - ._.. -21 integral rever§e G EL
(Body Diode) (D p-n junction diode. S
Van Diode Forward Voltage - - -6.3 V TJ=25°C, Is=-5.2A, Ves=0V ©
trr Reverse Recovery Time - 100 200 ns TJ=25°C, IF=-6.8A
er Reverse Recovery Charge - 0.33 0.66 0C dildt=100A/us ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lo)
Notes:
(f) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© Voo=-25v, starting TJ=25°C, L=16mH
RG=259, |As=-5.2A (See Figure 12)
TJS175°C
2 Isos-6.8A, di/dts110A/us, VoosWBmoss,
© t=60s, f=60Hz
© Pulse width 3 300 05; duty cycle 32%.
