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IRFI9540G
-100V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
h'ttettatiii.t.,t,tiall
TOR Rectifier
PD-9.837
lRFl9540G
HEXFET® Power MOSFET
0 Isolated Package
o High Voltage Isolation--. 2.5KVRMS © D V - 100V
tt Sink to Lead Creepage Dist.= 4.8mm DSS - -
o P-Channel
It 175°C Operating Temperature G RDS(on) = 0.209
o Dynamic dv/dt Rating
0 Low Thermal Resistance s ID = -1 IA
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. Q
The TO-220 Fullpak eliminates the need for additional insulating hardware in 'ggi-b'
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and _s'(iiiis):s,
external heatsink. This isolation is equivalent to using a 100 micron mica
barrier with standard TO-220 product. The Fullpak is mounted to a heatsink 'i1iiiiiis):
. using a single clip or by a single screw fixing. TO-220 FULLPAK
Absolute Maximum Ratings
Parameter Max. 'Tits-
In © To = 25°C Continuous Drain Current, Vas © -10 V MI
lo © To = 100°C Continuous Drain Current, VGs @ MO V -7.6 - A
IDM Pulsed Drain Current co -44 -
Po o To = 25°C Power Dissipation 48 J W
Linear Derating Factor 0.32 WPC
Ves Gate-to-Source Voltage :20
EAS Single Pulse Avalanche Energy © 600
MR Avalanche Current C) -11
EAR Repetitive Avalanche Energy (D 4.8
dv/dt Peak Diode Recovery dv/dt © -5.5
T, Operating Junction and -55 to +175
Tsm Storage Temp erature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 ibf-in (1.1 N-m) (
Thermal Resistance
Parameter Min. Typ. Max,' Units
Rm Junction-to-Case - - 3.1 °C/W
Rm Junction-to-Ambient - - 65
IRFl9540G
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage -100 - - V sz=ov, |D=-25011A
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - -0.087 - V/°C Reference to 25°C, ID=-1mA
Roam) Static Drain-to-Source On-Resistance - - 0.20 n VGs=-10V, ID=-6.6A ©
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V VDs=VGs, Irr=-250pA
gis Forward Transconductance 5.4 - - S VDs=-50V, lo=-6.6A (4)
loss Drain-to-Source Leakage Current - - -100 WA VDs=-1OOV, Vas=OV
- - -500 VDs=-80V, Vss=01/, TJ=150°C
less Gate-to-Source Forward Leakage - - -100 n A Ves=-20V
Gate-to-Source Reverse Leakage - - 100 VGs=20V
th Total Gate Charge - - 61 lo---n9A
Qgs Gate-to-Source Charge - - 14 I VDs=-80V
di Gate-to-Drain ("Miller") Charge - - 29 VGs=-10V See Fig, 6 and 13 ©
td(on) Turn-On Delay Time - 24 - VnD=-50V
tr Rise Time - 110 - ns Io=-19A
td(om Tu rn-Off Delay Time - 51 - RG=9.1Q
tf Fall Time - 86 - RD=7.4Q See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - tit,v,t"/on2ti1nd,') D
nH from package 5%
Ls Internal Source Inductance - 7.5 - a..nd center 6f
die contact s
Ciss Input Capacitance - 1400 - VGs=0V
Coss Output Capacitance - 590 -- pF VDs=-25V
Crss Reverse Transfer Capacitance - 140 - f=1.0MHz See Figure 5
C Drain to Sink Capacitance - 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ, Max. Units Test Conditions
Is Continuous Source Current - - -l 1 MOSFET symbol D
(Body Diode) A showing the L-sir,
ISM Pulsed Source Current - - -44 integral rever§e A G CL
(Body Diode) (i) p-n junction diode. s
Vso Diode Forward Voltage - - -4.2 V TJ=25°C, Is=-11A, VGs=0V ©
trr Reverse Recovery Time - 130 260 ns TJ=25°C, IF=-19A
er Reverse Recovery Charge - 0.35 0.70 wc di/dt=100A/us ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Lsreluo)
Notes:
(IC) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=-25V, starting TJ=25°C, L=7.4mH
Rty=25f2, IAs=-11A (See Figure 12)
TJS175°C
© 1503-1 9A, di/dts170A/us, VDDSV(BR)DSS.
© t--60s, f=60Hz
© Pulse width s; 300 us; duty cycle 52%.
