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IRFI9540N
-100V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
International
TOR Rectifier
PRELIMINARY
PD - 9.1487B
IRFI9540N
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS S
Sink to Lead Creepage Dist. = 4.8mm
P-Channel
. Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial
applications. The moulding compound used provides
a high isolation capability and a Iowthermal resistance
between the tab and external heatsink. This isolation
is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to
a heatsink using a single clip or by a single screw
fixing.
Absolute Maximum Ratings
HEXFET® Power MOSFET
VDSS = -100V
. o RDS(on) = 0.1179
ko-- -15A
'si:',',":..,;-',.-',
TO-220 FULLPAK
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ -10V -15
ID @ Tc = 100°C Continuous Drain Current, l/ss @ -10V -10 A
IDM Pulsed Drain Current (D6) -76
Po @Tc = 25°C Power Dissipation 54 W
Linear Derating Factor 0.36 W/°C
VGS Gate-to-Source Voltage 1 20 V
Eg Single Pulse Avalanche Energy©© 430 m1
IAR Avalanche CurrentC0© -11 A
EAR Repetitive Avalanche Energy0) 5.4 ttt)
dv/dt Peak Diode Recovery dv/dt ©© -5.0 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rmc Junction-to-Case - 2.8 o
Ras Junction-to-Ambient - 65 CAN
3/16/98
IRFl9540N
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -100 - - V VGS = 0V, ID = -250pA
AWBRDSSIATJ Breakdown Voltage Temp. Coemcient - -0.11 - V/“C Reference to 25°C, ID = -1mA©
RDS(on) Static Drain-to-Source On-Resistance - - 0.117 n VGs = -10V, ID = -7.8A ©
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V Vos = VGS, ID = -250pA
gfs Forward Transconductance 5.3 - - S Vos = -50V, ID = -11A©
bss Drain-to-Source Leakage Current - - -25 pA Vos = -100V, VGS = 0V
- - -250 VDS = -80V, Vss = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGs = -20V
% Total Gate Charge - - 97 ID = -11A
Qgs Gate-to-Source Charge - - 15 n0 Vos = -80V
di Gate-to-Drain ("Miller") Charge - - 51 VGS = -10V, See Fig. 6 and 13 ©©
tam) Turn-On Delay Time - 15 - VDD = -50V
tr Rise Time - 67 - ns ID = -11A
tum) Turn-Off Delay Time - 51 - Rs = 5.19
tf Fall Time - 51 - Ro = 4.20, See Fig. 10 ©©
. Between lead, D
Lo Internal Drain Inductance - 4.5 - nH 6mm (0.25in.) fl l
from package Gr Q!
Ls Internal Source Inductance - 7.5 - . _
and center of die contact s
Ciss Input Capacitance - 1300 - I/cs = 0V
Cass Output Capacitance - 400 - pF VDs = -25V
Crss Reverse Transfer Capacitance - 240 - f = 1.0MHz, See Fig. 5©
C Drain to Sink Capacitance - 12 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
b Continuous Source Current - - -15 MOSFETsymbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) COO) - - -76 p-n junction diode. s
N/sro Diode Forward Voltage - - -1.6 V TJ = 25°C, ls = -7.8A, VGS = 0V ©
trr Reverse Recovery Time - 150 220 ns T: = 25°C, I; = -11A
Qrr Reverse Recovery Charge - 830 1200 nC di/dt = -100A/ps ©©
Ion Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+Lro)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See Fig. 11 )
© Starting To = 25°C, L = 7.1mH
RG = 259, IAS = -11A. (See Figure 12)
© ISD I -11A, di/dt s -47OA/ps, Vor, s V(BR)Dss,
TJs175°C
co Pulse width s: 300ps; duty cycle 5 2%.
© t=60s, f=60Hz
© Uses IRF9540N data and test conditions
