IRFI9630GPBF ,-200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRFI9634G ,-250V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications.The moulding compound used provides a high isolationcapability and a low thermal resis ..
IRFI9634GPBF , HEXFET® Power MOSFET
IRFI9640G ,-200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used provides a
high isolation capability and a low thermal re ..
IRFI9Z34G ,-60V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageIRFIQZ34G
ISER
IRFI9Z34N ,-55V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageapplications. The moulding compound used providesa high isolation capability and a low thermal res ..
ISL6526ACB ,Single Synchronous Buck Pulse-Width Modulation (PWM) ControllerApplicationsISL6526ACB 0 to 70 14 Lead SOIC M14.15• Power Supplies for MicroprocessorsISL6526CR 0 t ..
ISL6526ACR ,Single Synchronous Buck Pulse-Width Modulation (PWM) ControllerISL6526®Data Sheet July 2003 FN9055.3Single Synchronous Buck Pulse-Width
ISL6526AIB ,Single Synchronous Buck Pulse-Width Modulation (PWM) Controllerfeatures a 15MHz gain-bandwidth • Converter can Source and Sink Currentproduct and 6V/µs slew rate ..
ISL6526AIR ,Single Synchronous Buck Pulse-Width Modulation (PWM) ControllerApplicationsISL6526ACB 0 to 70 14 Lead SOIC M14.15• Power Supplies for MicroprocessorsISL6526CR 0 t ..
ISL6526AIRZ , Single Synchronous Buck Pulse-Width Modulation (PWM) Controller
ISL6526AIRZ-TK , Single Synchronous Buck Pulse-Width Modulation PWM Controller
IRFI9630G-IRFI9630GPBF
-200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
International
Tthit Rectifier
PD-9.838
IIRFl9630G
HEXFET® Power MOSFET
0 Isolated Package
0 High Voltage Isolation.:: 2.5KVRMS ©
tt Sink to Lead Creepage Dist.= 4.8mm
o P-Channel
0 Dynamic dv/dt Rating
0 Low Thermal Resistance
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
Vass = -200V
RDS(on) = O.80g2
ID = -4.3A
on-resistance and cost-effectiveness.
The TO-22O Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica
barrier with standard TO-220 product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing.
Absolute Maximum Ratings
TO-220 F U LLPAK
r l, Parameter Max. Units —|
io @ To = 25°C Continuous Drain Current, I/ss @ -10 V -4.3
In @ To =. 100
IDM Pulsed Drain Current co -17
PD @ To = 25°C Power Dissipation 35 W
Linear Derating Factor 0.28 WPC
VGs Gate-to-Source Voltage :20 V
EAS Single Pulse Avalanche Energy © 480 mJ
TAR Avalanche Current (D -4.3 A
EAR Repetitive Avalanche Energy (D 3.5 mJ
dv/dt Peak Diode Recovery dv/dt © -5.o V/ns 1
To Operating Junction and -55 to +150
TSTG Storage Temperature Range 00
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
I Mounting Torque, 6-32 or M3 screw 10 Ibisin (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units 1
ReJC Junction-to-Case - - 3.6 o C /W
ReJA Junction-to-Ambient - - 65
lRFi9630G
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min, Typ. Max. Units i Test Conditions
V(BHJDSS Drain-to-Source Breakdown Voltage -200 _........ - v i Vss=OV, ID=-250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - -O.24 - WC 1 Reference to 25°C, lio--.-1mA
Rosmn) Static Drain-to-Source On-Resistance - .-.r.._ 0.80 Q i, VGs=-10V, b=-2.6A (ii)
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V E Voszves, ko=-250PA
gts Forward Transconductance 2.4 - - S VDs=-50V, |D=-2.6A co
loss Drain-to-Source Leakage Current - - -100 pA VDS=-200V’ VGS=OV
- - -500 VDs=-160V, VGs=0V, TJ=125°C
lsss Gate-to-Source Forward Leakage - - -100 n A VGs=-20V
Gate-to-Source Reverse Leakage - - 100 Vss--20V
q, Total Gate Charge - - 29 ID=-6.5A
Qgs Gate-to-Source Charge - - 5.4 nC VDs=-160V
di Gate-to-Drain ("Miller") Charge - - 15 VGs=-1OV See Fig. 6 and 13 ®
I tam) Turn-On Delay Time - 12 - Vrorr---1001/
, t, Rise Time - 27 - ns ID=-6.5A
td(om Turn-Off Delay Time - 28 - RG--12f2
t; Fall Time - 24 - Rrr=15f2 See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - tieriion.ltilnd.') t_ED
I nH from package air-ii,')
; Ls Internal Source Inductance - 7.5 - and center 6f
1 die contact s
'i' Ciss Input Capacitance - 700 - Vss--OV
5 Coss Output Capacitance - 200 - pF Vos=-25V
Crss Reverse Transfer Capacitance - 40 - f=1.0MHz See Figure 5
I C Drain to Sink Capacitance - 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
_:-' Parameter Min, Typ. Max. Units Test Conditions
2 Is Continuous Source Current - _ ..4 3 MOSFET symbol D
_'', (Body Diode) . A showing the F11)
f ISM Pulsed Source Current - - - 17 integral reverse G (rt-';
i' (Body Diode) C) p-n junction diode. s
i Vso Diode Forward Voltage - - -6.5 v TJ=25°C, Is=-4.3A, l/as-HN @
trr Reverse Recovery Time - 200 300 ns TJ=25°C, IF=-6.5A
er Reverse Recovery Charge - 2.0 2.9 pC di/dt=100A/ps (if)
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
Ci) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
Q) VDD=-50V, starting TJ=25°C, L=38mH
RG=25§2, |As=-4.3A (See Figure 12)
TJS150°C
© Isos-6.5A, di/de120A/ps, VDDSV(BR)Dss,
© t=60s, f=6OHz
(ii) Pulse width 3 300 ps; duty cycle £2%.
