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IRFI9Z34GIR N/a11800avai-60V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package


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IRFI9Z34G
-60V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
PD-9.842
llRFl9Z34G
ntettyaii..t,tt,tal
TOR Rectifier
HEXFETO Power MOSFET
0 Isolated Package
0 High Voltage Isolation: 2.5KVRMS 6) D V - - 6 0V
o Sink to Lead Creepage Dist.---.. 4.8mm DSS -
o P-Channel v
o 175°C Operating Temperature RDS(On) = 0.149
o Dynamic dv/dt Rating
0 Low Thermal Resistance
S |D='12A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in g;
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica
barrier with standard TO-220 product. The Fulipak is mounted to a heatsink
using a single clip or by a single screw fixing. TO-220 FULLPAK
Absolute Maximum Ratings
Parameter Max. Units
19 lg) To = 25°C Continuous Drain Current, Vss @ -10 V M2
ID © To = 100°C Continuous Drain Current, Vas Q) -10 V -8.5 A
[W Pulsed Drain Current co -48
Po @ To = 25°C Power Dissipation 42 W
Linear Derating Factor 0.28 WPC
VGS Gate-to-Source Voltage :20 V
EAs Single Pulse Avalanche Energy © 370 ml
lAn Avalanche Current (i) -12 A
EAR Repetitive Avalanche Energy C) 4.2, mJ
dv/dt Peak Diode Recovery dv/dt © -4.5 V/ns
To Operating Junction and -55 to +175
Tsm Storage Temperature Range (
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbfoin (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
ch Junction-to-Case - - 3.6 "C/W
Ram Junction-to-Ambient -- - 65
IRFi9iir34G
Electrical Characteristics @ Tg = 25°C (unless otherwise specified)
Parameter Min. Typ, Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -60 - - V Vas=0V, |D=-250uA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - -0.060 - VPC Reference to 25°C, Iro---lmA
RDS(on) Static Drain-to-Source On-Resistance - - 0.14 Q VGs=-10V, ID=-7.2A ©
Vegan) Gate Threshold Voltage -2.0 - -4.0 V Vos=Vss, lty=-250gA
gis Forward Transconductance 5.4 - - S Vos=-25V, |D=-7.2A ©
loss Drain-to-Source Leakage Current - - -100 pA VDs=-60V, l/tss-HN
- - -500 VDs=-48V, Ves=0V, TJ=150°C
less Gate-to-Source Forward Leakage - - -100 n A Vss=-20V
Gate-to-Source Reverse Leakage - - 100 VGs=2OV
Qg Total Gate Charge - -- 34 |D=-18A
Qgs Gate-to-Source Charge - - 9.9 nC VDs=-48V
di Gate-to-Drain ("Miller") Charge - - 16 VGs=-10V See Fig, 6 and 13 Cs)
tam") Turn-On Delay Time - 18 - VDD=-30V
t, Rise Time - 120 - ns lo=-18A
tam) Turn-Off Delay Time - 20 - Fle=120
it Fall Time - 58 - Ro=1.5f2 See Figure 10 ©
LD Internal Drain Inductance - 4.5 V - [tl,ri'Jitiei.') D
nH from package (3Q:
Ls Internal Source Inductance - 7.5 - and center 6f
die contact s
Ciss input Capacitance - 1 100 - VGs=0V
Cass Output Capacitance - 620 - pF Vos=-25V
Crss Reverse Transfer Capacitance - 100 - f=1.0MHz See Figure 5
C Drain to Sink Capacitance - 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - -1 2 MOSFET symbol D
(Body Diode) A showing the L-i,
ISM Pulsed Source Current - - - 48 integral reverse G (Ir
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - .-.- -8.3 V TJ=25°C, ls=-12A, Var-OV ©
trr Reverse Recovery Time - 100 200 ns TJ=25°C, lp=-18A
Orr Reverse Recovery Charge - 0.28 0.52 wc di/dt---100A/ws co
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD)
Notes:
OD Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
C2) VDD=-25V, starting TJ=25°C, L=3.0mH
Re=25§2, lAs=-12A (See Figure 12)
TJS175°C
(l)) Isos-12A, di/dts170A/ps, 1horr-N(Bn)oss,
© t=60s, f=60Hz
(ii) Pulse width 3 300 us; duty cycle 52%.
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