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IRFI9Z34NIRN/a350avai-55V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package


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IRFI9Z34N
-55V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
PD - 9.1530A
IRFI9Z34N
HEXFET® Power MOSFET
International
TOR, Rectifier
0 Advanced Process Technology
o Isolated Package D V - 55V
0 High Voltage Isolation = 2.5KVRMS (9 DSS - -
o Sink to Lead Creepage Dist. = 4.8mm V R - O lon
o P-Channel G H _ DS(0n) - .
0 Fully Avalanche Rated
Description s ID = -14A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications. © triCtGi-2-
The TO-220 Fullpakeliminates the need for additional
insulating hardware in commercial-industrial
applications. The moulding compound used provides
a high isolation capability and a Iowthermal resistance
between the tab and external heatsink. This isolation
is equivalent to using a 100 micron mica barrier with TO-220 FULLPAK
standard TO-220 product. The Fullpak is mounted to
a heatsink using a single clip or by a single screw
fixing.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, I/ss @ -10V -14
ID @ Tc = 100°C Continuous Drain Current, VGS @ -10V -10 A
IDM Pulsed Drain Current COO) - 68
PD @Tc = 25°C Power Dissipation 37 W
Linear Derating Factor 0.24 W/°C
N/ss Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy©© 180 mJ
IAR Avalanche Currenk0© -10 A
EAR Repetitive Avalanche Energy0) 3.7 ntl
dv/dt Peak Diode Recovery dv/dt (MD -5.0 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rac J unction-to-Case - 4 .1 o C NV
ReJA Junction-to-Ambient - 65
8/25/97

IRFl9Z34N International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 - - V VGS = 0V, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefrcient - -0.05 - V/°C Reference to 25°C, ID = -1mA©
RDS(on) Static Drain-to-Source On-Resistance - - 0.10 f2 VGs = -1OV, ID = - 7.8A (9
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V VDs = VGs, ID = -250pA
gig Forward Transconductance 4.2 - - S VDs = 25V, ID = -10A©
loss Drain-to-Source Leakage Current - - -25 PA l/os = - 55V, VGS = 0V
- - -250 Vos = - 44V, VGS = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - - 35 ID = -10A
Qgs Gate-to-Source Charge - - 7.9 nC VDS = - 44V
di Gate-to-Drain ("Miller") Charge - - 16 V68 = -10V, See Fig. 6 and 13 ©©
tum) Turn-On Delay Time - 13 - VDD = -28V
tr Rise Time - 55 - ns ID = -IOA
tum) Turn-Off Delay Time - 30 - R3 = 139
tf Fall Time - 41 - RD = 2.6n, See Fig. 10 @©
. Between lead, D
LD Internal Drain Inductance - 4.5 - .
nH 6mm (0.25in.) Gil/tj-) )
Ls Internal Source Inductance - 7 5 - from package
. and center of die contact s
Ciss Input Capacitance - 620 - Veg = 0V
Coss Output Capacitance - 280 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 140 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - -14 MOSFET symbol D
(Body Diode) A showing the 'r-,,-,,
ISM Pulsed Source Current integral reverse G m“
(Body Diode) COO) - - -68 p-n junction diode. s
Vso Diode Forward Voltage - - -1.3 V To = 25°C, ls = - 7.8A, I/ss = 0V ©
trr Reverse Recovery Time - 54 82 ns To = 25°C, IF = -10A
Qrr Reverse RecoveryCharge - 110 160 nC di/dt = -100Alps COO)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by C4) Pulse width f 300ps; duty cycle f 2%.
max. junction temperature. ( See fig. 11 )
Q) Starting Tu-- 25°C, L = 3.6mH G) t=60s, f=60Hz
RG = 259, IAS = -10A. (See Figure 12)
© ISD LC -10A, di/dt s -290/Vps, VDD g 1/(BRyoss, © Uses IRF9Z34N data and test conditions
T J s: 175°C

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