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IRFIB5N50L
500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
International
TOR Rectifier
SMPS MOSFET
PD - 94522A
IRFIB5N50L
HEXFET@ Power MOSFET
Applications
o Zero Voltage Switching SMPS . VDSS RDS(on) typ. Trr typ. ID
. Telecom and Server Power Supplies
q Uninterruptible Power Supplies 500V 0.679 73ns 4.7A
0 Motor Control applications
Features and Benefits
0 SuperFast body diode eliminates the need for external
diodes in ZVS applications. -.
Lower Gate charge results in simpler drive requirements. -
Enhanced dv/dt capabilities offer improved ruggedness.
Higher Gate voltage threshold offers improved noise TO-220 Full-Pak
immunity.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS@ 10V 4.7
ID @ Tc = 100°C Continuous Drain Current, I/ss @ 10V 3.0 A
bs, Pulsed Drain Current (D 16
Po @Tc = 25°C Power Dissipation 42 W
Linear Derating Factor 0.33 W/°C
I/cs Gate-to-Source Voltage t30 V
dv/dt Peak Diode Recovery dv/dt © 13 V/ns
T., Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw 10ltrin (1.1N-m)
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 4.7 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 16 integral reverse G
(Body Diode) CD p-n junction diode. S
VSD Diode Forward Voltage - - 1.5 V Tu = 25°C, IS = 4.0A, VGs = 0V ©
trr Reverse Recovery Time - 73 110 ns T J = 25''C, IF = 4.0A
- 99 150 To-- 125°C, di/dt = 100A/ps co
Qrr Reverse Recovery Charge - 200 310 nC To = 25°C, Is = 4.0A, VGS = 0V (D
- 360 540 To-- 125°C, di/dt = 100A/ps C)
IRRM Reverse Recovery Current - 6.7 10 A To = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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07/18/03
International
IRFll35N50L
TOR Rectifier
Static til T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Ty p. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 500 - - V VGS = 0V, b = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.43 - V/''C Reference to 25°C, ID = 1mA
RDs(on) Static Drain-to-Source On-Resistance - 0.67 0.80 Q VGS = 10V, ID = 2.4A G)
Vesnm Gate Threshold Voltage 3.0 - 5.0 V Vas = l/ss, ID = 250PA
loss Drain-to-Source Leakage Current - - 50 0A Vros = 500V, I/ss = 0V
- - 2.0 mA Vas = 400v, I/ss = OV, T: = 125°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 30V
Gate-to-Source Reverse Leakage - - -100 Vss = -30V
Re Internal Gate Resistance - 2.0 - Q f= 1MHz, open drain
Dynamic @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min Typ Max Units Conditions
gfs Forward Transconductance 2.8 - - S Vros = 50V, ID = 2.4A
09 Total Gate Charge - - 45 ID = 4.0A
Qgs Gate-to-Source Charge - - 13 nC Vros = 400V
di Gate-to-Drain ("Miller") Charge - - 23 Vos = 10V, See Fig. 7 & 16 ©
td(on) Turn-On Delay Time - 13 - Va, = 250V
t, Rise Time - 17 - ns ID = 4.0A
td(off) Turn-Off Delay Time - 26 - Rs = 9.09
ti Fall Time - 10 - VGS =10V,See Fig.11a &11b ©
Ciss Input Capacitance - 1000 - Vss = 0V
Cass Output Capacitance - 110 - Vros = 25V
Crss Reverse Transfer Capacitance - 12 - f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 1360 - pF Ves = 0V, Vos = 1.0V, f = 1.0MHz
Cass Output Capacitance - 31 - VGS = 0V, Vos = 400V, f = 1.0MHz
Cass eff. Effective Output Capacitance - 75 - Vss = th/Nos = ov to 400V ©
Coss eff. (ER) Effective Output Capacitance - 55 -
(Energy Related)
Avalanche Characteristics
Parameter
Thermal Resistance
Symbol Parameter Typ. Max. Units
Rea: Junction-to-Case - 3.0 ''C/W
ReJA Junction-to-Ambient - 65
Notes:
C) Repetitive rating; pulse width limited by
© Pulse width f 300ps; duty cycle S 2%.
max. junction temperature. (See Fig. 11).
© Starting TJ = 25''C, L =18mH,RG = 259,
IAS-- 4.0A, dv/dt = 13V/ns. (See Figure 12a).
© ISD S 4.0, di/dt S 280/Ups, VDD S V(BR)DSS,
T: S: 150°C.
S Coss eff. is a foted capacitance that gives the same charging time
as Coss while I/os is rising from 0 to 80% V055.
Coss eff.(ER) is a fixed capacitance that stores the same energy
as Coss while Vos is rising from 0 to 80% Voss-
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