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IRFIBE20G
800V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
irttet'tati..t,ttall
EOR Rectifier
PD-9.853
IRFlBE20G
HEXFET® Power MOSFET
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
isolated Package
High Voltage Isolation-- 2.5KVRMS ©
Sink to Lead Creepage Dist.= 4.8mm
Dynamic dv/dt Rating
Low Thermal Resistance
D I/oss = 800V
RDS(on) = 6.5
s ID = 1.4A
on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica
barrier with standard TO-220 product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing.
Absolute Maximum Ratings
8‘. IE
Parameter Max. Units
lo © To = 25°C Continuous Drain Current, I/tas © 10 V 1.4
In © To = 100°C Continuous Drain Current, Ves @ 10 V 0.86 A
IDM Pulsed Drain Current co 5.6
PD @ To = 25°C Power Dissipation 30 _-sr--
Linear Derating Factor 0.24 _L WPC
Ves Gate-to-Source Voltage $20 V
EAS Single Pulse Avalanche Energy © 180 _- mJ
IAR Avalanche Current T 1.4 - A
EAR Repetitive Avalanche Energy Cf) 3.0 mJ
dv/dt Peak Diode Recovery dv/dt © 2.0 V/ns
TJ Operating Junction and -55 to +150 -
TSTG Storage Temperature Range 0c
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
i' Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1 Nom)
Thermal Resistance
Parameter Min. Typ. Max. Units
ch J.ur"li.on-t.of".t - w 4.1 o C AN
Ram Junction-to-Am bient - - 65
ifRFll3E20G
Electrical Characteristics tii) Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)oss Drain-to-Source Breakdown Voltage 800 - - V Vss=OV, ID: 2500A
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.98 - VPC Reference to 25°C, In: 1mA
Roam) Static Drain-to-Source On-Resistance - - 6.5 Q VGs=10V, |D=0.84A Ci)
VGS(th) Gate Threshold Voltage 2.0 ....-. 4.0 V VDs=VGs, In-- 250WA
ggs Forward Transconductance 1.0 - - S VDs=1OV, 10:0.84A GD
loss Drain-to-Source Leakage Current - - 100 “A VDs=800V, Ves=OV
- - 500 VDs=64OV, VGs=0V, TJ=125°C
less Gate-to-Source Forward Leakage - .- 100 n A VGs=20V
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
ch Total Gate Charge - - 38 |D=1.8A
Qgs Gate-to-Source Charge - - 5.0 " 1hos=400V
di Gate-to-Drain ("Miller") Charge - - 21 Ves=10V See Fig. 6 and 13 ©
Won) Turn-On Delay Time - 8.2 - VDD=400V
tr Rise Time - 17 - ns ID=1.8A
tum”) Turn-Off Delay Time - 58 -.. Re=18§2
h Fall Time - 27 - Ro=2309 See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - 'htt"iif.ltilnd.') i,
nH from package 5%)
Ls Internal Source Inductance - 7.5 - Ind center df
die contact s
Ciss Input Capacitance - 530 - VGS=0V
Coss Output Capacitance - 150 - pF Vos=25V
Crss Reverse Transfer Capacitance M 90 - f=1.0MHz See Figure 5
C Drain to Sink Capacitance - 12 - pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. I Max. Units Test Conditions
ls Continuous Source Current - - 1 4 MOSFET symbol D
(Body Diode) . A showing the Ci)
lsu Pulsed Source Current - - 5.6 integral reverge G :L
(Body Diode) co p-n junction diode. s
Vso Diode Forward Voltage - - 1.4 V TJ=2500, 15:1.4A, Vss--0V ©
trr Reverse Recovery Time - 380 570 ns TJ=25°C, IF=1.8A
G, Reverse Recovery Charge - 0.94 5 1.4 110 di/dt=100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by L5+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=50V, starting TJ=25°C, L=172mH
RG=25§2, |As=1.4A (See Figure 12)
© 13031 .8A, di/dts80A/ps, VDDSSOO ,
TJS150°C
S t=60s, f=60Hz
co Pulse width s: 300 us; duty cycle 32%.
