IRFIBF30G ,900V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packageInternational
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PD-9.856
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IRFIBF30G
900V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
international]
Rectifier
HEXFET® Power MOSFET
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, tow
Isolated Package
High Voltage Isolation-- 2.5KVRMS ©
Sink to Lead Creepage Dist.--- 4.8mm
Dynamic dv/dt Rating
Low Thermal Resistance
PD-9.856
(llRFlll3F30G
VDSS = 900V
RDS(on) = 3.7f2
on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100 micron mica
barrier with standard TO-22O product. The Fullpak is mounted to a heatsink
using a single clip or by a single screw fixing.
Absolute Maximum Ratings
TO-220 FU LLPAK
Parameter Max, Units
Io @ To = 25°C _ Continuous Drain Current, l/tss © 10 V 1.9
in © Tc T.". 100°C Continuous Drain Current, VGs © 10 V 1.2 A
los, Pulsed Drain Current C) 7.6
PD @ Tc = 25°C Power Dissipation 35 W
Linear Derating Factor 0.28 WPC
Vas Gate-to-Source Voltage $20 V
EAS Single Pulse Avalanche Energy © 220 md
'AR Avalanche Current co 1.9 A
EAR Repetitive Avalanche Energy C) 3.5 mJ
dv/dt Peak Diode Recovery dv/dt © 1.5 V/ns
To Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
1 Mounting Torque, 6-32 or M3 screw 10 Ibfoin (1.1 Nom)
Thermal Resistance
Parameter Min. Typ, Max. Units
Rem; Junction-to-Case - - 3.6 oC/W
Ram Junction-to-Ambient - - 65 -
lRFll3F30G
Electrical Characteristics © Ta = 25°C (unless otherwise specified)
C) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=50V, starting TJ=25°C, L=115mH
Re=259, lAs=1.9A (See Figure 12)
© |SDS3.6A, di/dts70A/ps, VDDSGOO,
TJS150°C
Parameter I Min. Typ. Max. Units V Test Conditions
V(Bmoss Drain-to-Source Breakdown Voltage 900 - - V VGs=0V, lo: 25OWA
_ AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient -.r.r. 1.1 - VPC Reference to 25°C, ID: 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 3.7 f2 Vss=10V, |D=1.1A ©
Vegan) Gate Threshold Voltage 2.0 - 4.0 V VDS=VGs, ID: 25thsA
gm Forward Transconductance 1.7 - - S VDs=50V, 19:1.1A (4)
loss Drain-to-Source Leakage Current - - 100 11A Vios=900V, Vss=OV
- - 500 Vos=720V, I/ss-HN, TJ=125°C
Isss' Gate-to-Source Forward Leakage - - 100 ' n A VGs=20V
Gate-to-Source Reverse Leakage - - -100 Vss=-20V
ch Total Gate Charge - - 78 |o=3.6A
Qgs I Gate-to-Source Charge -- - 10 n0 Vos=360V
di Gate-to-Drain ("Miller") Charge - - 42 VGs=10V See Fig. 6 and 13 ©
tam”) Tum-On Delay Time - 14 - VDD=450V
t, Rise Time - 25 - ns |D=3.6A
tti(oii) Turn-Off Delay Time - 90 - Fla=12Q
tf Fall Time - 30 - Ro--120n See Figure 10 ©
LD Internal Drain Inductance - 4.5 - t'ht,vr/on.lrn1 o
nH from package SQ
Ls' Internal Source Inductance - 7.5 - Ind center of i
die contact s
Ciss Input Capacitance - 1200 - VGs=OV
Coss Output Capacitance - 320 - pF VDs=25V
Crss Reverse Transfer Capacitance - 200 -- f=1.0MHz See Figure 5
C Drain to Sink Capacitance - 12 -..r.r... pF f=1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units l Test Conditions
ls Continuous Source Current - - 1 9 MOSFET symbol D
(Body Diode) ' A showing the _'tlrii'r)
ISM Pulsed Source Current - - 7.6 integral reverse G :1.
(Body Diode) C) p-njunction diode. s
Vso Diode Forward Voltage - - 1.8 V TJ=25°C, ls=1.9A. VGS=0V ©
in Reverse Recovery Time - 430 650 ns TJ=25OC, Ir=3.6A
G, Reverse Recovery Charge - 1.4 2.1 PC di/dt=100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
© t=60s, f=60Hz
© Pulse width s. 300 us; duty cycle 32%.
