IRFK2D450 ,500V HALF BRDG HEXFET Power MOSFET in a TO-240AA packageapplications.
Absolute Maximum Rating
Parameter Max. Units
b @ TC:25°C l Continuous Drain Curren ..
IRFK2D450+ ,500V HALF BRDG HEXFET Power MOSFET in a TO-240AA packageInternational
Bulletin E2794
mRectitier IRFK2D450,lRFK2F450
Isolated Base Power HEX-pakTM ..
IRFK4H250 ,200V SINGLE HEXFET Power MOSFET in a TO-240AA packageapplications.
Absolute Maximum Rating
Parameter - Max. Units
ID © TC=25°C Continuous Drain Curre ..
IRFK4H350 ,400V SINGLE HEXFET Power MOSFET in a TO-240AA packageBulletin E27106
International
TOR Rectifier IRFK4H350,lRFK4J350
Isolated Base Power HEX-pakT ..
IRFK4H350+ ,400V SINGLE HEXFET Power MOSFET in a TO-240AA packageapplications.
Vias = 400V
RDS(on) = 75mQ
Absolute Maximum Rating
Parameter Max. _Uni_ts - ..
IRFK4H450 ,500V SINGLE HEXFET Power MOSFET in a TO-240AA packageBulletin E27107
International
TOR Rectifier IRFK4H450,lRFK4J450
Isolated Base Power HEX-pakT ..
ISL6532CR ,ACPI Regulator/Controller for Dual Channel DDR Memory SystemsFeaturesDual Channel DDR Memory Systems• Generates 2 Regulated VoltagesThe ISL6532 provides a compl ..
ISL6532CR ,ACPI Regulator/Controller for Dual Channel DDR Memory SystemsApplicationsEach output is monitored for under and over-voltage events. Current limiting is include ..
ISL6532CRZ-T , ACPI Regulator/Controller for Dual Channel DDR Memory Systems
ISL6534CV-T , Dual PWM with Linear
ISL6535IRZ , Synchronous Buck Pulse-Width Modulator PWM Controller
ISL6536AIB ,Four Channel Supervisory ICApplicationsvalid on all four rails. Subsequently when the monitored • Graphics Cardsvoltage on any ..
IRFK2D450-IRFK2D450+
500V HALF BRDG HEXFET Power MOSFET in a TO-240AA package
miternationall
TOR Rectifier
Bulletin E2794
llRFK2D450,IRFK2F450
Isolated Base Power Hiiix-pakm Assembly " Half Bridge Configuration
High Current Capability.
UL recognised E78996.
Electrically Isolated Base Plate.
Easy Assembly into Equipment.
Description
The HEX-pakTM utilises the welI-proven HEXFETTM die, combining
low on-state resistance with high transconductance. These superior
technology die are assembled by state of the art techniques into the
TO-240 package, featuring 2.5kV rms isolation and solid M5 screw
connections. The small footprint means the package is highly suited to
power applications where space is a premium. Available in two
RDSion) = 200mn
versions, IRFK.D... for fast switching and |RFK.F... for oscillation ID = 22A
sensitive applications.
Absolute Maximum Rating
I Parameter Max. Units
ID @ Tc=25°C l Continuous Drain Current 22 A
ID © TC=100°C I Continuous Drain Current 14 A
IDM Pulse Drain Current 88 A (D
PD @ TC=25°C Maximum Power Dissipation 500 W
VGS sate-to-sara/sue- - - 7 20 V
VINS R.M.S. Isolation Voltage, circuit to base 2.5 W
T J Operating Junction Temperature Range -40 to 150 oc
TSTG Storage Temperature Range -40io 150 00
Thermal and Mechanical Specifications
-__L, Parameter Min. Typ. Max. Units
Rthcc Junction-to-Case - 0.25 K/W ©
Rmcs Case-to-Sink, smooth & greased surface 0.1 - W
T Mounting Torque +10% - - - - i i i i i 6 -
HEXpak to Heatsink 5 Nm
-iAu_srrar. to HEXpak 3 Nm "
wt Approximate Weight - 140 g
5 b 02
Notes:
co - Repetitive Rating: Pulse width limited by maximum junction temperature see figure 8.
© - Per Module.
0 - A mounting compound is recommended and the torque should be rechecked after a period of three
hours to allow for the spread of the compound.
IRFK2D450,lRFK2F450
Electrical Characteristics @ T J = 25°C (Unless otherwise specified)
© - Pulse Width f 30005; Duty cycle s. 2%.
Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-to-Source Breakdown 500 - V Vas--0V, ID=1.0mA
voltage
RDS(on) Static Drain-to-Source 160 200 mn VGS=10V, |D=14A
On-State Resistance
I own) On-State Drain Current 22 - - A VDs > Won) x RDS(cn)max,
VGS=1OV
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos=vos, ID-1.0mA
gfs Forward Transconductance co 16 26 - S Vos > 50V, Io=14A
bss Zero Gate Voltage Drain Current - - 0.5 mA VDS=VDSmax. Var-or
- 2.0 mA VGS=10V, TC=125°C,
VDS=VDSmax x 0.8
Es Gate-to-Source Leakage Forward - _ 200 nA VGS=20V
lass Gate-to-Source Leakage Reverse - .. -200 nA Vss---20V
Qg Total Gate Charge - 225 260 no ID-22A. VGS=10V,
Qgs Gate-to-Source Charge - 22 34 nC VDS=VDSmax x 0.8
di Gate-to-Drain ("Miller") Charge - 86 128 nC
two") Turn-on Delay Time 1RFK2D450 - 4O - ns VDD=210V, ID=14A,
|RFK2F450 - 45 ns
t, Rise Time IRFK2D450 50 - ns VGS=10V,
IRFK2F450 65 - ns
two") Turn-oif Delay Time IRFK2D450 190 - ns RSOURCE=3'SQ
- IRFK2F450 - 250 ns
t, Fall Time IRFK2D450 - 4O - ns
IRFK2F450 - 65 - ns
Los Drain-to-Source Inductance 18 - nH
Ciss Input Capacitance 5.5 - nF VGS=0V, VDS=25V,
Coss Output Capacitance - 1.2 nF f:1.0MHz
Crss Reverse Transfer Capacitance - 0.35 nF
Linear Derating Factor - - 4 W/K
Source-Drain Diode Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - 22 A
(Body Diode)
ISM Pulsed Source Current - 80 A
(Body Diode)
VSD Diode Forward Voltage - 1.4 V VGS=0V, ls: 22A, Tc=25°C
trr Reverse Recovery Time 280 580 1200 ns di/dt=200A/ps, T J=150°C
0,, Reverse Recovered Charge 6.4 13.5 30.0 no Is=22A
Notes:
