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IRFK6H150IRN/a5avai100V SINGLE HEXFET Power MOSFET in a TO-240AA package


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IRFK6H150
100V SINGLE HEXFET Power MOSFET in a TO-240AA package
"-v.'rriuc'3". _
Bulletin E27110
International % l
TOR Rectifier IRFK6H150,IRFK6J150
Isolated Base Power HEX-pakTM Assembly - Parallel Chip Configuration
High Current Capability.
UL recognised E78996.
Electrically Isolated Base Plate.
Easy Assembly into Equipment.
Description
The HEx-pakTM utilises the well-proven HEXFETTM die, combining V - 100V
low on-state resistance with high transconductance. These superior DS -
technology die are assembled by state of the art techniques into the
TO-24O package. featuring 2.5kV rms isolation and solid M5 screw R = 10mg
connections. The small footprint means the package is highly suited to DS(on)
power applications where space is a premium. Available in two
versions, lRFK.H... for fast switching and IRFKJ... for oscillation ID = 150A
sensitive applications.
Absolute Maximum Rating
Parameter Max. Units
ID © TC=25°C Continuous Drain Current 150 A
In @ Tc--100oC continTrsTorrnarreTt" 120 g A
us, Pulse Drain Current 720 - i A of _
Po © @235 "Ma-xirrrum%ar%Lipitio; - _ _ - - - 625 w
VGS Gate-to-Source Voltage 20 V
V‘NS R.M.S. Isolation Voltage, circuit to base 2.5 W
T J Operating Junction Temperature Range -40 to 150 oc
TSTG Storage Temperature Range MO to 150 oc
Thermal and Mechanical Specifications
Parameter Min. Typ. 7 Max. Units
Rch Junction-to-Case - - 0.20 K/W ©
Rthcs Case-to-Sink, smooth & greased surface - al" - _ - W
T Mounting Torque +10% ---- - ©
HEXpak to Heatsink - 5 - Nm
g Busbar to HEXpak - 3 - Nm
-G Approximate Weig ht - 140 - fligh—
Notes: k
C) - Repetitive Rating: Pulse width limited by maximum junction temperature see figure 8.
© - Per Module.
© - A mounting compound is recommended and the torque should be rechecked after a period bf thrée
hours to allow for the spread of the compound.
IRFK6H150,lRFK6F150
Electrical Characteristics © T J = 25°C (Unless otherwise specified)
Cif) - Pulse Width s: 300ps; Duty cycle s 2%.
Parameter - -------, Min. Typ. Max. Units Test Conditions
BVDSS Drain-to-Source Breakdown 100 - V VGS=OV, !D=1.0mA
voltage - - l
RDSW) Static Drain-to-Source 8 10 mg I VGS=10V, ID=120A
orstate Resistance - ------
low”) On-State Drain Current 150 - - A Vos > bon) x Roswnjmax,
VGS=1OV
vawm Gate Threshold Voltage 2.0 - 4.0 V VDS=VGS, ID=1.5mA
gfs Forward Transconductance © 75 1E- _ - - s- _VDé > 50V, IDZ12_0A_ - -
loss Zero Gate Voltage Drain Current - - 1.5 1 mA Vos=Vosmax, Vss=0v
- 6.0 mA VGS=10V- TC=125°C,
_ - Vos--Vosmax x 0.8
Isss Gate-to-Source Leakage Forward "M - 600 nA Vss=20V
loss Gate-to-Source Leakage Reverse _] - -600 nA Vss---20V
a, Total Gate Charge 530 750 nC b=150A, VGS=10V,
Qgs Gate-to-Source Charge .. 100 150 nC Vos=Vosmax x 0.8
di Gate-to-Drain ("Miller") Charge - 250 350 no
td(on) Turn-on Delay Time IRFK6H150 105 - ns VDD=40V, |D=120A,
- IRFK6J150 ,_‘_ 120 __'' ns
tr Rise Time IRFK6H150 - 460 - ns VGS=1OV,
IRFK6J150 - 570 - ns
tdmn) Turn-off Delay Time IRFK6H150 - 300 - ns Rsounar--3.3n
- _lfFK6J150 400 ns
t, Fall Time IRFK6H150 _ 150 - ns
IRFK6J150 240 - ns
Los Drain-to-Source lndudance - lil - nH
-crc, - - _ Iapuicapazna’nc; - - i W 11.0 _ m: Wessvagésvi
Cass Output Capacitance -] 6.0 I - -- nF t--1OMHz
Crss Reverse Transfer Capacitance - - .-sTo- - - __E _
Linear Derating Factor l - 5 W/K
Source-Drain Diode Ratings and Characteristics
Parameter l Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 150 A
(Body Diode)
ISM Pulsed Source Current 665 A
(Body Diode)
VSD Diode Forward Voltage 2.5 V l VGS=0V, IS: 150A, TC=25°C
T,," Reverse Recovery Time 90 190 390 ns 1 di/d1=400A/ps, T J=150°C
A, Reverse Recovered Charge 4.5 I 10.0 I 20.0 wc l IS=150A
Notes:
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