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IRFM044IRN/a5avai60V Single N-Channel Hi-Rel MOSFET in a TO-254AA package


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IRFM044
60V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
PD- 907088
International
TOR, Rectifier
IRF M 044
POWER MOSFET 60V, N-CHANNEL
TH RU-HOLE (TO-254AA) HEXFET" MOSFET TECHNOLOGY
Product Summary
Part Number RDS(on) ID
IRFM044 0.04 n 35A* . _
"Sli-it"'
HEXFET® MOSFET technology is the key to International
RecWer's advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transConductanCe. HEXFET TO-254AA
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch- Featu res:
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
. . . a Simple Drive Requirements
mg .power egppliee, motor controls, i.nve.rters, cho-ppers, n Ease of Paralleling
audio amplifiers, high energy pelse firc.uits, ahd virtually n Hermetically Sealed
any applicatloh where high reliability Is reqijlred. The n Electrically Isolated
HEXFETtranSIstor’s totally isolated package eliminates the a Dynamic dv/dt Rating
need for additional iselating material between. the device a Light-weight
and the heatsink. This Improves thermal efficiency and
reduces drain capacitance.
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 35*
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 28 A
IDM Pulsed Drain Current C) 180
PD @ TC = 25°C Max. Power Dissipation 125 W
Linear Derating Factor 1.0 W/°C
VGS Gate-to-Source Voltage 120 V
EAS Single Pulse Avalanche Energy © 340 ml
IAR Avalanche Current CO - A
EAR Repetitive Avalanche Energy (D - mJ
dv/dt Peak Diode Recovery dv/dt © 4.5 V/ns
TJ Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 ( 0.063 in.(1.6mm) from case for 10s)
Weight 9.3 (Typical) g
*Current is limited by pin diameter
For footnotes refer to the last page
1
1/30/02
IRFM044 International
TOR Rectifier
Electrical Characteristics ©TI = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDss Drain-to-Source Breakdown Voltage 60 - - V VGS = 0V, ID = 1.0mA
ABVDss/ATJ Temperature Coemcient of Breakdown - 0.68 - V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 0.04 VGS = 10V, t = 28A
Resistance 0.05 VGS = 10V, ID = 35A
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, ID = 250pA
gfs Forward Transconductance 17 - - S M 1/DS > 15V, log, = 28A ©
loss Zero Gate Voltage Drain Current - - 25 VDS= 48V ,N/GS=0V
- - 250 “A VDS = 48V,
VGS = 0V, TJ = 125°C
less Gate-to-Source Leakage Forward - - 100 VGS = 20V
less Gate-to-Source Leakage Reverse - - -100 nA VGS = -20V
09 Total Gate Charge - - 88 W33 =10V, ID = 35A
Qqs Gate-to-Source Charge - - 15 nC VDS = 30V
di Gate-to-Drain ('Miller') Charge - - 52
td(on) Turn-On Delay Time - - 23 VDD = 30V, ID = 35A,
tr Rise Time - - 130 VGS =10V, RG = 9.19
td(off) Turn-Off Delay Time - - 81 ns
tt FallTime - - 79
LS + LD Total Inductance - 6.8 - nH Measured from drain lead (6mm/
0.25in. from package) to source lead
(6mm/0.25in. from package)
Ciss Input Capacitance - 2400 - VGS = 0V, VDs = 25V
Coss Output Capacitance - 1100 - pF f= 1.0MHz
Crss Reverse Transfer Capacitance - 230 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
ls Continuous Source Current (Body Diode) - - 35* A
ISM Pulse Source Current (Body Diode) C) - - 180
VSD Diode Forward Voltage - - 2.5 V Ti = 25°C, Is = 35A, VGs = 0V co
trr Reverse Recovery Time - - 220 nS Tj = 25°C, IF = 35A, di/dt s 100/Ws
QRR Reverse Recovery Charge - - 1.6 00 VDD S 50V ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Tum-on speed is substantially controlled by Ls + LD.
*Current is limited by pin diameter
Thermal Resistance
Parameter Min Typ Max Units TestConditions
RthJC Junction-to-Case - - 1.0 o
RthJCS Case-to-Sink - 0.21 - C/W
RthJA Junction-to-Ambient - - 48 Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page

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