IRFML8244TRPBF ,25V Single N-Channel HEXFET Power MOSFET in a Micro 3 packagePD - 97587AIRFML8244TRPbFHEXFET Power MOSFETV 25 VDSV ± 20 VGS Max
IRFML8244TRPBF
25V Single N-Channel HEXFET Power MOSFET in a Micro 3 package
International
IEER Rectifier
PD - 97587A
IRFML8244TRPbF
H EXFET© Power MOSFET
V05 25 V
Vas Max 1 20 V G
RDS(on) max
(@Vss =1OV) D
( @V (°E):';’\‘/) 41 mn s Micro3TM (SOT-23)
GS - . IRFML8244TRPbF
Application(s)
. Load/ System Switch
Features and Benefits
Features Benefits
Low RDS(on) ( S 24mQ) Lower switching losses
Industry-standard pinout Multi-vendor compatibility
Compatible with existing Surface Mount Techniques results in Easier manufacturing
RoHS compliant containing no lead, no bromide and no halogen => Environmentally friendly
MSL1, Consumer qualification Increased reliability
Absolute Maximum Ratings
Symbol Parameter Max. Units
Vos Drain-Source Voltage 25 V
ID @ T, = 25°C Continuous Drain Current, Vss @ 10V 5.8
ID @ TA = 70°C Continuous Drain Current, I/as @ 10V 4.6 A
IDM Pulsed Drain Current 24
Pro @TA = 25°C Maximum Power Dissipation 1.25 W
Pry @TA = 70°C Maximum Power Dissipation 0.80
Linear Derating Factor 0.01 WPC
Vss Gate-to-Source Voltage * 20 V
Tv, Tsm Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Symbol Parameter Typ. Max. Units
ROJA Junction-to-Ambient © - 100 °C/W
ROJA Junction-to-Ambient (t<10s) © - 99
ORDERING INFORMA TION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes co through © are on page 10
1
02/29/12
|RFML8244TRPbF
International
TOR Rectifier
Electric Characteristics © To = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 25 - - V Vss = 0V, ID = 250uA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.02 - V/°C Reference to 25°C, ID = 1mA
- 20 24 Vss =1ov, ID = 5.8A ©
Rrosom Static Drain-to-Source On-Resistance m9
- 32 41 Vss = 4.5V, ID = 4.6A ©
VGS(lh) Gate Threshold Voltage 1.35 1.7 2.35 v Vos = Vas, ID = 10PA
IDSS Drain-to-Source Leakage Current - - 1.0 pA Vos = 20V, Vss = 0V
- - 150 Vos = 20V, Vas = 0V, To = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage -- -- -100 Ves = -20V
Re Internal Gate Resistance - 1.6 - Q
gfs Forward Transconductance IO - - S Vos = 10V, ID = 5.8A
A Total Gate Charge -- 5.4 - ID = 5.8A
Qgs Gate-to-Source Charge - 1.0 - nC Vos =13V
di Gate-to-Drain ("Miller") Charge - 0.81 - Vss = 10V ©
td(on) Turn-On Delay Time - 2.7 - VDD =13V©
t, Rise Time - 2.1 --.- lo = 1.0A
tam) Turn-Off Delay Time - 9.0 - ns Rs = 6.89
t, Fall Time - 2.9 - Vss = 10V
Ciss Input Capacitance - 430 - Vss = 0V
Coss Output Capacitance - 110 - pF Vos = 10V
Crss Reverse Transfer Capacitance - 49 - f = 1.0MHz
Source - Drain Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 1 25 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current _ _ 24 integral reverse s
(Body Diode) Co p-n junction diode.
Vso Diode Forward Voltage - - 1.2 V TJ = 25''C, Is = 5.8A, Vss = 0V ©
trr Reverse Recovery Time - 11 17 ns TJ = 25°C, VF. = 20V, V=5.8A
Q,, Reverse Recovery Charge - 4.2 6.3 nC di/dt = 100A/ps ©
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