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IRFP044NPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
PD- 95421
International
TOR Rectifier IRFP044NPbF
HEXFET“ Power MOSFET
Advanced Process Technology
Dynamic dv/dt Rating D
175°C Operating Temperature
Fast Switching Rosa)”, = 0.0209
Fully Avalanche Rated G
Lead-Free ID = 53A
Description
Fifth Generation HEXFETS from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designerwith an extremely efficient
and reliable device for use in a widevariety of applications.
VDSS = 55V
The TO-247 package is preferred for commerciaI-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the TO-247AC
earlier TO-218 package because of its isolated mounting
Absolute Maximum Ratings
Parameter Max. Units
ID Cl TC = 25''C Continuous Drain Current, Vos Cl 10V 53
b C) TC =100°C Continuous Drain Current, Vss Cl 10V 37 A
IDM Pulsed Drain Current (i)6) 180
PD (ilTc = 25°C Power Dissipation 120 W
Linear Derating Factor 0.77 we
Vss Gate-tlot; Voltage i 20 V
Eps Single Pulse Avalanche Energy(M) 230 mJ
IAR Avalanche Current0) 28 A
EAR Repetitive Avalanche Energy0) 12 mJ
dv/dt Peak Diode Recovery dv/dt OXO 5.0 V/ns
T: Operating Junction and -55 to + 175
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mountingtorque, 6-32 or M3 screw 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rex Junction-to-Case - 1.3
Rgcs Case-ttAWK, Flat, Greased Surface 0.24 - °C/W
RGJA Junction-to-Ambient - 40
1
06/14/04
IRFP044NPbF International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V Vos = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. CoetMient - 0.017 - W'C Reference to 25''C, lo = 1mAS
RDs(on) Static Drain-to-Source On-Resistance - - 0.020 Q Ws = 10V, ID = 29A 6)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Ws = Vos, b = 250pA
git Forward Transconductance 16 - - S Ws = 25V, ID = 28A©
lass Drain-tty-S- Leakage Current - - 25 pA Ws = 55V, Vos = 0V
- - 250 Ws = 44V, Vos = ov, Tu = 150''C
'ess Gate-to-Source Forward Leakage - - 100 n A Vos = 20V
Gate-to-Source Reverse Leakage - - -100 Vos = -20V
% Total Gate Charge - - 61 ID = 28A
Qgs Gate-to-Source Charge - - 13 nC Vos = 44V
di Gate-to-Drain ("Miller") Charge - - 24 Vos = 10V, See Fig. 6 and 13 ©©
tum) Turn-On Delay Time - 12 - VDD = 28V
tr Rise Time - 80 - ns ID = 28A
td(off) Turn-Off Delay Time - 43 - Re =12n
tr Fall Time - 52 - RD = 0.SW2, See Fig. 10 (9(S)
LD Internal Drain Inductance - 5.0 - 1e,1"iri,eie' £0
from package 0
Ls Internal Source Inductance - 13 - .
and center of die contact s
Cas Input Capacitance - 1500 - Ws = 0V
Coss Output Capacitance - 450 - pF Ws = 25V
Crss Reverse Transfer Capacitance - 160 - f = 1.0MHz. See Fig. 56)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
is Continuous Source Current MOSFET symbol 0
(Body Diode) - - 53 A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) co - - 180 p-n junction diode. s
N/sro Diode Forward Voltage - - 1.3 V Tu = 25"C, Is = 29A, Vos = 0V ©
t, Reverse Recovery Time - 72 110 ns Tu = 25''C, IF = 28A
Q,, Reverse Recovery Charge - 210 310 pC di/dt = -100A/ps @CS)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-m is dominated by Ls+LD)
Notes:
C) Repetitive rating: pulse width limited by © Pulse width s: 300ps: duty cycle s: 2%.
max. junction temperature. ( See fig. 11 )
© VDD = 25V, starting Tu = 25''C, L = 410pH G) Uses IRFZ46N data and test conditions
Re = 259. IAS = 28A. (See Figure 12)
© Iso S 28A, di/dt S 240Atos, VDD S V(BR)DSS'
TJS 175°C
2
