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IRFP21N60L
600V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
PD - 94503
It ti l
':fliiilTgl(1lfi)rile-l SMPSMOSFET IRFP21N60L
Applications HEXFET@ Power MOSFET
Zero Voltage Switching SMPS
Telecom and Server Power Supplies VDSS RDS(0n) typ. Trr typ. ID
Uninterruptible Power Supplies 600V 270mQ 160ns 21A
Motor Control applications
Features and Benefits
o SuperFast body diode eliminates the need for external 14%;
diodes in ZVS applications. f'
Lower Gate charge results in simpler drive requirements.
Enhanced dv/dt capabilities offer improved ruggedness.
q Higher Gate voltage threshold offers improved noise immunity. TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS@ 10V 21
ID © Tc = 100°C Continuous Drain Current, VGS @ 10V 13 A
IDM Pulsed Drain Current OD 84
PD @Tc = 25°C Power Dissipation 330 W
Linear Derating Factor 2.6 W/°C
VGs Gate-to-Source Voltage A30 V
dv/dt Peak Diode Recovery dv/dt co 11 V/ns
T J Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw 1.1(10) tom (Ibfoin)
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 21 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 84 integral reverse G
(Body Diode) co p-n junction diode. s
VSD Diode Forward Voltage - - 1.5 V To = 25°C, Is = 21A, VGS = 0V Ci)
trr Reverse Recovery Time - 160 240 ns TJ = 25''C, IF = 21A
- 400 610 T J= 125°C, di/dt = 100A/ps Ci)
Qrr Reverse Recovery Charge - 480 730 nC TJ = 25°C, Is = 21A, VGS = 0V co
- 1540 2310 To-- 125°C, di/dt = 1OOA/ps Ci)
IRRM Reverse Recovery Current - 5.3 7.9 A TJ = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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02/18/03
IRFP21N60L
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BRJDSS Drain-to-Source Breakdown Voltage 600 - - V VGS = 0V, lo = 250PA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.42 - Vl°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance 270 320 mf2 VGS = 10V, ID = 13A 09
VGS(m) Gate Threshold Voltage 3.0 - 5.0 V Vos = VGS, ID = 250PA
IDSS Drain-to-Source Leakage Current - - 50 pA Vos = 600V, Vss = 0V
- - 2.0 mA Vos = 480V, Vss = 0V, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 30V
Gate-to-Source Reverse Leakage - - -100 Vss = -30V
Re Internal Gate Resistance - 0.63 - Q f= 1MHz, open drain
Dynamic © Tu = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 11 - - S Vos = 50V, ID = 13A
q, Total Gate Charge - - 150 ID = 21A
As Gate-to-Source Charge - - 46 n0 Vos = 480V
di Gate-to-Drain ("Miller") Charge - - 64 Vss = 10V, See Fig. 7 & 15 ©
tum) Turn-On Delay Time - 20 - VDD = 300V
t, Rise Time - 58 - ns ID = 21A
1mm Turn-Off Delay Time - 33 - Rs = 1.39
tr Fall Time - 10 - Ves =10V,See Fig. 11a &11b C9
Ciss Input Capacitance - 4000 - VGS = 0V
Coss Output Capacitance - 340 - Ws = 25V
Crss Reverse Transfer Capacitance - 29 - pF f = 1.0MHz, See Fig. 5
Cuss eff. Effective Output Capacitance - 170 - I/ss = 0V,Vros = 0V to 480V ©
Coss eff. (ER) Effective Output Capacitance - 130 -
(Energy Related)
Avalanche Characteristics
Parameter
Thermal Resistance
Symbol Parameter Typ. Max. Units
ROJC Junction-to-Case - 0.38
Recs Case-to-Sink, Flat, Greased Surface 0.24 - ''C/W
ROJA Junction-to-Ambient - 40
Notes:
© Pulse width S 300ps; duty cycle s: 2%.
(9 Coss eff. is a foted capacitance that gives the same charging time
as Coss while Vos is rising from 0 to 80% Voss.
Coss eff.(ER) is a fixed capacitance that stores the same energy
as Coss while Vos is rising from O to 80% Voss.
co Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
© Starting TJ = 25°C, L = 1.9mH, Re: 259,
IAs = 21A, dv/dt = 11V/ns. (See Figure 12a)
© Iso S 21A, di/dt S 530A/ps, VDD f V(BR)DSSv
T J 3 150°C.
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