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IRFP240FSCN/a15avai20A, 200V, 0.180 Ohm, N-Channel Power MOSFET


IRFP240 ,20A, 200V, 0.180 Ohm, N-Channel Power MOSFETFeaturesMOSFET• 20A, 200VThis N-Channel enhancement mode silicon gate power field = 0.180Ω•rDS(ON) e ..
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IRFP240
20A, 200V, 0.180 Ohm, N-Channel Power MOSFET
IRFP240
20A, 200V , 0.180 Ohm, N-Channel Power
MOSFET

This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17422.
Features
20A, 200V
DS(ON)
= 0.180 Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Related Literature TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC STYLE TO-247
Ordering Information

NOTE: When ordering, include the entire part number.
SOURCE
DRAIN
(FLANGE)
GATE
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