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IRFP254-IRFP254PBF
250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
1nta1riatiip,t,tall
Ih!h2 Rectifier
PD-9.54OB
TlFP254
HEXFET® Power MOSFET
Dynamic dv/dt Rating
Repetitive Avalanche Rated D
Isolated Central Mounting Hole
Fast Switching
Ease of Paralleling
Simple Drive Requirements
VDSS t.,,. 250V
RDS(on) = 0.149
ID = 23A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications
where higher power levels preclude the use of TO-eo devices. The TO-247
is similar'but superior to the earlier TO-218 package because of its isolated
mounting hole. It also provides greater creepage distance between pins to
meet the requirements of most safety specifications.
Absolute Maximum Ratings
TO-247AC
B. :8}
Parameter Max. Units
lo @ Tc = 25°C Continuous Drain Current, Ves © 10 V 23
ID @ To = 100°C Continuous Drain Current, Vas © 10 v 15 A
IDM Pulsed Drain Current co 92
Po @ Tc = 25°C Power Dissipation 190 W
Linear Derating Factor 1.5 W/°C
Vss Gate-to-Source Voltage 4:20 V
EAS Single Pulse Avalanche Energy © 410 mJ
IAR . Avalanche Current C) 23 A
EAR Repetitive Avalanche Energy co 19 mJ
dv/dt Peak Diode Recovery dv/dt © 4.8 V/ns
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range oc
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbf-in (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
ch Junction-to-Case - - 0.65
Recs Case-to-Sink, Flat, Greased Surface -..- 0.24 - 5 oC/W ,
Ram Junction-to-Ambient - - 40 '
|RFP254
Electrical Characteristics tii) Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 250 - - V VGS=0V, ID: 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.39 - VPC Reference to 25°C, ID: 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.14 n VGs=10V, lro--14A (4)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos--Vas, ' 250PA
gts Forward Transconductance 11 - -. S Vos=50V, b--14A <4) 1
loss Drain-to-Source Leakage Current - - 25 pA VDS=250V' Vss--0V
- - 250 VDs=2OOV, VGS=0V, TJ=125°C
less Gate-to-Source Forward Leakage -.. - 100 n A VGs=2OV
Gate-to-Source Reverse' Leakage - - -100 VGs=-20V
th Total Gate Charge - - 140 b=23A
Qgs Gate-to-Source Charge - - 24 n0 VDs=200V
di Gate-to-Drain ("Miller") Charge - - 71 Ves=10V See Fig. 6 and 13 (E)
td(on) Turn-On Delay Time - 15 -...... VDD=125V
t, Rise Time --. 63 - ns lo=23A
tcnom Turn-Off Delay Time - 74 - RG=6.2Q
t, Fall Time - 50 - RD=5.4Q See Figure 10 ©
Ln Internal Drain Inductance - so - Esramqezaa Jie. ') D
nH from package ii)] j
Ls Internal Source Inductance - 13 - and center df
die contact s
Ciss Input Capacitance - 2700 - Vss=0V
Cogs Output Capacitance - 620 - pF V93: 25V
Crss Reverse Transfer Capacitance - 180 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 23 MOSFET symbol D
(Body Diode) A showing the F71)
ISM Pulsed Source Current - _ 92 integral reverse G l
(Body Diode) Ci) p-n junction diode. s
Vso Diode Forward Voltage - - 1.8 V TJ=25°C, ls=23A, VGS=OV (4)
tn Reverse Recovery Time - 370 560 ns TJ=25°C, IF=23A
er Reverse Recovery Charge - 4.6 6.9 pt) di/dt=100A/ps ©
ton Fo rward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
(f) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
C2) VDD=5OV, starting TJ=25°C, L=1.2mH
RG=25Q, |AS=23A (See Figure 12)
© IsoszaA, di/dts180A/ws, VrorosV(rm)ross,
TJS150°C
© Pulse width f 300 ps; duty cycle 32%.
