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IRFP264 |IRFP264IR N/a800avai250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
IRFP264PBFVISHAYN/a12000avai250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package


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IRFP264 -IRFP264PBF
250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
PD-9.756
llnterinatiionall
EOR Rectifier IlRFP264
HEXFET® Power MOSFET
0 Dynamic dv/dt Rating
q Repetitive Avalanche Rated D -
0 Isolated Central Mounting Hole VDSS - 250V
o FastSwitching
0 Ease of Paralleling r, RDS(on) = 0.0759
0 Simple Drive Requirements
S ID =., 38A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-24T package is preferred for commercial-industrial applications
where higher power levels preclude the use of TO-22O devices. The TO-247
is similar but superior to the earlier TO-218 package because of its isolated
mounting hole. It also provides greater creepage distance between pins to
meet the requirements of most safety specifications.
TO-247AC
Absolute Maximum Ratings
Parameter Max. , Units
ID @ Tc = 25°C Continuous Drain Current, l/cs @ 10 V 38
ID @ T9: 100°C Continuous Drain Current, Ves @ 10 V 24 . A
IDM Pulsed Drain Current C) 150
Pa @ Tc = 25°C Power Dissipation 280 W
Linear Derating Factor 2.2 WPC
l/tss Gate-to-Source Voltage d:20 V
EAS Single Pulse Avalanche Energy Q) 1000 ml
IAR Avalanche Current co 38 A
EAR Repetitive Avalanche Energy C) -28 mJ
dv/dt Peak Diode Recovery dv/dt © 4.8 1 V/ns
' Tu Operating Junction and -55 to +150
Tsro Storage Temperature Range ' “C
Soldering Temperature, for 10 seconds 300 (1.6mm from case) l
Mounting Torque, 6-32 or M3 screw 10 Ibfdn (1.1 Nom) (
Thermal Resistance
HE. -_____..__.._____._!_Dy_ar_tyj)_ttirr, ______ - Min. Typ. Max, Units
Rex: Junction-to-Case - - 0.45
Recs Case-to-Sink, Flat, Greased Surface - 0.24 ',, - "C/W
EM -,___clrorLti,lrtto-Ambient - - - 4O
IRFP264
Electrical Characteristics tii) Tu = 25°C (unless otherwise specified)
CO Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
2 VDD=50V, starting TJ=25°C, L=1.1mH
RG=25f2, lAs=38A (See Figure 12)
Parameter Min. Typ. Max, Units Test Conditions
V(Bnmss Drain-to-Source Breakdown Voltage 250 --- - V VGs=ov, ID: 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.37 - V/OC Reference to 25°C, In: 1m A
Hosmn) Static Drain-to-Source On-Resistance - - 0.075 f2 VGs=10V, b=23A Cr)
Vesah; Gate Threshold Voltage 2.0 - 4.0 V VDs=VGs. ID: 250WA
gis Forward Transconductance 2O - - S VDs=50V, lo=23A g)
loss Drain-to-Source Leakage Current - - 25 WA Vos=250V, VGFOV
_ - - 250 VDs=200V, Vss=OV, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A Ves=20V
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
Qg Total Gate Charge - - 210 |D=38A
Qgs Gate-to-Source Charge - - 35 " , Vos=200V
di Gate-to-Drain ("Miller") Charge - - 98 VGs=10V See Fig. 6 and 13 ©
tam) Tum-On Delay Time - 22 - VDD=125V
tr Rise Time - ; 99 - ns lro---38A
tam) Turn-Off Delay Time - , 110 - Rs=4.3n
t: Fall Time - 92 - Ro=3.2§2 See Figure 10 ©
Lo Internal Drain Inductance - 5.0 - tr1vt1t"('i:rl.lisil,d.') D
nH from package _ eg: )
Ls Internal Source Inductance - 13 - and center 6f
die contact s
i' Ciss Input Capacitance - 5400 - I/ss-HN
Coss Output Capacitance - 870 - pF Vos--. 25V
Crss Reverse Transfer Capacitance -._ 150 - f=1.0MHz- See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 38 MOSFET symbol D
(Body Diode) A showing the 'ij-)
ISM Pulsed Source Current --- - 150 integral T""Y G :3.
(Body Diode) (i) p-n junction diode. s
Vso Diode Forward Voltage -. - 1.8 V TJ=25°C, ls=38A, I/ss-HN co
tn Reverse Recovery Time - 410 620 ns T,r--250C, IF=38A
Clrr Reverse Recovery Charge .._ 5.7 8.6 M) di/dt=100A/us (4)
ton Fo rward Tum-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
C3) Isos38A, di/de210A/ps, VDDSV(BR)DSS,
TJS150°C
GD Pulse width 3 300 us; duty cycle 32%.
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