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IRFP264NIRN/a403avai250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
IRFP264NPBFVISHAYN/a12000avai250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package


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IRFP264N-IRFP264NPBF
250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
International
TOR Rectifier
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
Description
Fifth Generation HEXFETs from International Rectiflerutilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commerciaI-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superiorto the earlierTO-21 8 package because of its isolated mounting hole.
PD - 94214
RF P264 N
HEXFET© Power MOSFET
VDSS = 250V
A RDS(on) = 60mn
ID = 44A
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 44
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 31 A
IDM Pulsed Drain Current C) 170
Pro @Tc = 25°C Power Dissipation 380 W
Linear Derating Factor 2.6 W/°C
VGS Gate-to-Source Voltage 1 20 V
EAs Single Pulse Avalanche Energy© 520 mJ
IAR Avalanche Current(0 25 A
EAR Repetitive Avalanche Energy© 38 mJ
dv/dt Peak Diode Recovery dv/dt © 8.7 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Reoc Junction-to-Case - 0.39
Recs Case-to-Sink, Flat, Greased Surface 0.24 - °C/W
ReJA Junction-to-Ambient - 40

5/4/01
IRFP264N
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 250 - - V VGS = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.30 - V/°C Reference to 25''C, ID = 1mA
Roswn) Static Drain-to-Source On-Resistance - - 60 mn VGS = 10V, ID = 25A ©
Vegan) Gate Threshold Voltage 2.0 - 4.0 V VDs = Was, ID = 250pA
9ts Forward Transconductance 29 - - S VDS = 25V, ID = 25A©
loss Drain-to-Source Leakage Current - - 25 pA I/os = 250V, VGS = 0V
- - 250 VDS = 200V, Vss = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - - 210 ID = 25A
095 Gate-to-Source Charge - - 34 n0 VDs = 200V
di Gate-to-Drain ("Miller") Charge - - 94 V65 = 10V, See Fig. 6 and 13
tdwn) Turn-On Delay Time - 17 - VDD = 30V
tr Rise Time - 62 - ns ID = 25A
td(off) Turn-Off Delay Time - 52 - Rs = 1.882
t, Fall Time - 53 - VGS = 10V, See Fig. 10 (4)
. Between lead, D
u, Internal Drain Inductance - 5.0 - .
nH 6mm (0.25m) _,il'/-l-" )
from package G
Ls Internal Source Inductance - 13 - . _
and center of die contact s
Ciss Input Capacitance - 3860 - VGs = 0V
C055 Output Capacitance - 480 - Vros = 25V
Crss Reverse Transfer Capacitance - 110 - pF f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 44 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 170 integral reverse G
(Body Diode)© p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25°C, ls = 25A, VGS = 0V ©
trr Reverse Recovery Time - 270 400 ns TJ = 25°C, IF = 25A
G, Reverse Recovery Charge - 2.7 4.1 pC di/dt = 100Alps co
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by L5+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
© Starting TJ = 25°C, L = 1.7mH
Rs = 259, IAS = 25A,Vss=10V
TJs175°C
© Iso S 25A, di/dt f 500/Ups, VDD S V(BR)DSSI
co Pulse width LC 400ps; duty cycle 5 2%.

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