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IRFP27N60K
600V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
International
:raRIectifier
Applications
Hard Switching Primary or PFC Switch
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply
High Speed Power Switching
Motor Drive
SMPS MOSFET
PD - 94407
IRFP27N60K
HEXFET© Power MOSFET
RDS(on) typ.
180mf2
Benefits
o Low Gate Charge 09 results in Simple
Drive Requirement
o Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
o Fully Characterized Capacitance and
Avalanche Voltage and Current
o Enhanced Body Diode dv/dt Capability
Absolute Maximum Ratings
TO-247AC
Parameter
ID @ Tc = 25°C
Continuous Drain Current, l/ss @ 10V
ID @ Tc = 100°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current C)
Pro @Tc = 25°C
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ©
Operating Junction and
Storage Temperature Range
-55 to + 150
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting torqe, 6-32 or M3 screw
10 lbf-in (1 .1N-m)
Avalanche Characteristics
Symbol
Parameter
Single Pulse Avalanche Energy©
Avalanche CurrentC0
Repetitive Avalanche Energy0)
Thermal Resistance
Symbol
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
03/20/02
IRFP27N60K
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units] Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 600 - - V Vss = 0V, ID = 250PA
AV(BR,DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.64 - VI°C Reference to 25°C, ID = 1mA©
RDs(on) Static Drain-to-Source On-Resistance - 180 220 mn VGS = 10V, ID = 16A ©
VGS(th) Gate Threshold Voltage 3.0 - 5.0 V Vos = Ves, ID = 250pA
Koss Drain-to-Source Leakage Current _- _- 25500 pA x3: -] 228$ x2: =- g, To = 125°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 30V
Gate-to-Source Reverse Leakage - - -100 l/cs = -30V
Dynamic @ Tu = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 14 - - S Vos = 50V, ID = 16A
% Total Gate Charge - - 180 ID = 27A
095 Gate-to-Source Charge - - 56 n0 Vos = 480V
di Gate-to-Drain ("Miller") Charge - - 86 VCs = 10V, See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 27 - VDD = 300V
tr Rise Time - 110 - ns ID = 27A
td(off) Turn-Off Delay Time - 43 - Rs = 4.39
tf Fall Time - 38 - Vss = 10V,See Fig. 10 ©
Ciss Input Capacitance - 4660 - VGS = 0V
Coss Output Capacitance - 460 - Vos = 25V
Crss Reverse Transfer Capacitance - 41 - pF f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 5490 - VGS = 0V, Ws = 1.0V, f = 1.0MHz
COSS Output Capacitance - 120 - I/ss = 0V, I/rss = 480V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 250 - l/ss = 0V, Vos = 0V to 480V s
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 27 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) co - - 110 p-n junction diode. s
VSD Diode Forward Voltage - - 1.5 V To = 25°C, ls = 27A, VGS = 0V ©
trr Reverse Recovery Time - 620 920 ns TJ = 25°C, IF = 27A
Qrr Reverse RecoveryCharge - 11 16 PC di/dt = 100Alps ©
IRRM Reverse RecoveryCurrent - 36 53 A
ton Forward Turn-On Time Intrinsic turn-on time is negligible (tum-on is dominated by L3+LD)
Notes:
co Repetitive rating; pulse width limited by G) Pulse width 3 300ps; duty cycle s: 2%.
max. junction temperature. (See Fig. 11)
© Starting T J = 25°C, L = 1.4mH, Rs = 259,
IAS = 27A
© Isro : 27A,
, dv/dt = 13V/ns. (See Figure 12a)
di/dt S 390A/ps, VDD S V(BR)ross,
TJ f 150°C.
s cus eff. is a fixed capacitance that gives the same charging time
as Coss while V05 is rising from 0 to 80% VDss.
