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IRFP2907-IRFP2907PBF
75V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
PD -93906D
IRFP2907
HEXFET® Power MOSFET
International
TOR Rectifier
AUTOMOTIVE MOSFET
Typical Applications D
o Lntegrated sitarterflttrry1o.r Voss = 75V
. 2 Volts Automotive Electrical Systems
Benefits ' A RDS(on) = 4.5mQ
. Advanced Process Technology G
. gltra ngOn 1tsittance ID = 209A©
. ynamlc dv/dt Rating s
. 175°COperatingTemperature
. Fast Switching
o Repetitive Avalanche Allowed up to Tjmax
Description , 32%
Specifically designedforAutomotive applications, this _ _ A ,3 '
Stripe Planar design of HEXFETD Power MOSFETs _ ' ' ..
utilizes the lastest processing techniques to achieve ' _ " S
extremely low on-resistance per silicon area. .. GD
Additional features of this HEXFET power MOSFET
are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche TO-247AC
rating. These benefits combine to make this design an
extremely efficient and reliable device for use in
Automotive applications and a wide variety of other G D s
applications. .
Absolute Maximum Ratings Gate Drain Source
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vas @ 10V 209©
ID © To = 100°C Continuous Drain Current, Vas @ 10V 148© A
IDM Pulsed Drain Current (D 840
PD @Tc = 25°C Power Dissipation 470 W
Linear Derating Factor 3.1 W/°C
VGS Gate-to-Source Voltage t 20 V
EAS Single Pulse Avalanche Energy© 1970 mJ
IAR Avalanche Current See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy© mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.32
Recs Case-to-Sink, Flat, Greased Surface 0.24 - °C/W
RQJA Junction-to-Ambient - 40
1
08/08/11
IRFP2907
International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 - - V Vas = 0V, ID = 250uA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.085 - V/°C Reference to 25''C, ID = 1mA
RDs(on) Static Drain-to-Source On-Resistance - 3.6 4.5 mn Vas = 10V, ID = 125A ©
Vrssith) Gate Threshold Voltage 2.0 - 4.0 V Vos = 10V, ID = 250pA
gts Forward Transconductance 130 - - S Vos = 25V, ID = 125A
loss Drain-to-Source Leakage Current - - 20 pA Vos = 75V, l/ss = 0V
- - 250 Vos = 60V, Veg = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 200 n A Vas = 20V
Gate-to-Source Reverse Leakage - - -200 Vas = -20V
% Total Gate Charge - 410 620 ID = 125A
Qgs Gate-to-Source Charge - 92 140 nC Vos = 60V
di Gate-to-Drain ("Miller") Charge - 140 210 Vas = 10V@
td(on) Turn-On Delay Time -- 23 -- VDD = 38V
tr Rise Time - 190 - ns ID = 125A
td(oit) Turn-Off Delay Time - 130 - Rs = 1.29
tt Fall Time - 130 - Vas = 10V ©
u, Internal Drain Inductance - 5.0 - Between lgad, D
nH 6mm (0.25m.) E )
LS Internal Source Inductance --.- 13 --.- from package G
and center of die contact s
Ciss Input Capacitance - 13000 - Vas = 0V
Coss Output Capacitance - 2100 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 500 - f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 9780 - l/ss = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 1360 - VGS = 0V, VDs = 60V, f = 1.0MHz
Coss eff. Effective Output Capacitance s - 2320 - Vss = 0V, VDS = 0V to 60V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 2096) A showing the
ISM Pulsed Source Current - - 840 integral reverse G
(Body Diode) (D p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 125A, Vss = 0V ©
trr Reverse Recovery Time - 140 210 ns Tu = 25°C, IF = 125A
Qrr Reverse RecoveryCharge - 880 1320 nC di/dt = 100A/us (9
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by L5+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
© Starting Tu
= 25°C, L = 0.25mH
Rs = 259, IAS-- 125A. (See Figure 12).
© ISDS125A,
TJ f 175°C
di/dt S 260A/us, VDD S V(BR)DSSy
© Pulse width S 400ps; duty cycle 5 2%.
6) Coss eff. is a fixed capacitance that gives the same charging time
as Coss while l/rss is rising from O to 80% Voss .
© Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 90A.
© Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
