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IRFP4228PBF
150V Single N-Channel PDP Switch HEXFET Power MOSFET in a TO-247AC package
PD - 97229A
International
Tart Rectifier PDP SWITCH llRFP4228PbF
Features
. Advanced Process Technology Key Parameters
q Key Parameters Optimized for PDP Vos min 150 V
Sustain, Energy Recovery and Pass Vros (Avalanche) typ. 180 V
Switch Applications Ros ON typ. @ 10V 12 m9
. Low EPULSE Rating to Reduce Power I '21 @ T - 100°C 170 A
Dissipation in PDP Sustain, Energy RP c-
Recovery and Pass Switch Applications Tu max 175 °C
. Low QG for Fast Response
q High Repetitive Peak Current Capability for D D
Reliable Operation c'v,'slri,so,
q Short Fall & Rise Times for Fast Switching F. :fp:
.175°C Operating Junction Temperature for ‘ A ros
Improved Ruggedness G G
. Repetitive Avalanche Capability for
Robustness and Reliability S TO-247AC
Gate Drain Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter Max. Units
l/es Gate-to-Source Voltage :30 V
ID © To = 25°C Continuous Drain Current, Vss © 10V 78 A
lr, @ TC = 100°C Continuous Drain Current, Vas @ 10V 55
los, Pulsed Drain Current co 330
a, @ TC = 100°C Repetitive Peak Current (S) 170
PD @Tc = 25°C Power Dissipation 310 w
PD @Tc = 100°C Power Dissipation 150
Linear Derating Factor 2.0 W/°C
TJ Operating Junction and -40 to + 175 =
TSTG Storage Temperature Range
Soldering Temperature for 10 seconds 300
Mounting Torque, 6-32 or M3 Screw 10ltrin (1 .1N-m) N
Thermal Resistance
Parameter Typ. Max. Units
Rm Junction-to-Case Ci) - 0.49 °C/W
Recs Case-to-Sink, Flat, Greased Surface 0.24 -
Fu, Junction-to-Ambient - 40
Notes C) through © are on page 8
1
09/14/07
lRFP4228PbF
International
TOR Rectifier
Electrical Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 150 - - V Vss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 150 - mV/°C Reference to 25°C, ID = 1mA
Rosann) Static Drain-to-Source On-Resistance - 12 15.5 m9 Vss = lov, '0 = 33A ©
Vega,» Gate Threshold Voltage 3.0 - 5.0 v VDS = Veg, ID = 250uA
AVGS(m)/ATJ Gate Threshold Voltage Coefficient - -14 - mV/°C
loss Drain-to-Source Leakage Current - - 20 pA Vos = 150V, Vss = 0V
- _ 1.0 mA Vos = 150V, I/as = 0V, Tu = 125°C
IGSS Gate-to-Source Forward Leakage - - 100 nA l/ss = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
gfs Forward Transconductance 170 - - S Vos = 25V, lo = 50A
a, Total Gate Charge - 71 107 nC VDD = 75V, ID = 50A, I/ss = 10V®
di Gate-to-Drain Charge - 21 -
tam) Turn-On Delay Time - 18 _ Va, = 75v, Vas = 10V co
t, Rise Time - 59 - ns '0 = 50A
tom Turn-Off Delay Time - 24 - Rs = 2.59
ti Fall Time - 33 - See Fig. 22
tm Shoot Through Blocking Time 100 - - ns VDD = 120V, Vas = 15V, Re-- 5.19
L = 220nH, C= 0.3pF, Vas =15V
EPULSE Energy per Pulse - 58 - pJ VDS = 120V, Re: 5.19, TJ = 25°C
- 110 - L=220nH, C= 0.3pF, Vss=15V
Vos =120V, Ra-- 5.19, TJ = 100°C
Ciss Input Capacitance - 4530 - Vss = 0V
Cass Output Capacitance - 550 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 100 - f = 1.0MHz
Coss eff. Effective Output Capacitance - 480 - Vas = OV, Vos = Ol/to 120V
LD Internal Drain Inductance - 4.5 - Between lead, D
nH 6mm (0.25in.) /E:>
Ls Internal Source Inductance - 7.5 - from package s-rr-"--
and center of die contact s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 210 md
EAR Repetitive Avalanche Energy (D - 33 mJ
VDSWalanche) Repetitive Avalanche Voltage co 180 - V
las Avalanche Current C) - 50 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls @ To = 25°C Continuous Source Current - - 78 MOSFET symbol a
(Body Diode) A showing the _,
Iss, Pulsed Source Current - - 330 integral reverse 6 Ex
(Body Diode) co p-n junction diode. e
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 50A, Vas = 0V Ce)
trr Reverse Recovery Time - 76 110 ns Tu = 25°C, IF = 50A, VDD = 50V
a,, Reverse Recovery Charge - 230 350 nC di/dt = 100A/ps co
2
