IRFP450B ,500V N-Channel MOSFETIRFP450BNovember 2001IRFP450B500V N-Channel MOSFET
IRFP450N ,500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
IRFP460 ,20A, 500V, 0.270 Ohm, N-Channel Power MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
IRFP460C ,500V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 20A, 500V, R = 0.24Ω @V = 10 VDS(on) ..
IRFP460LCPBF ,500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
IRFP460LCPBF ,500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
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ISL6605IRZ , Synchronous Rectified MOSFET Driver
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ISL6609ACRZ , Synchronous Rectified MOSFET Driver
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IRFP450B
500V N-Channel MOSFET
IRFP450B November 2001 IRFP450B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 14A, 500V, R = 0.39Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 87 nC) planar, DMOS technology. • Low Crss ( typical 60 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge. D !!!!!!!! ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● !!!! !!!! TO-3P S IRFP Series GS D Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter IRFP450B Units V Drain-Source Voltage 500 V DSS I - Continuous (T = 25°C) Drain Current 14 A D C - Continuous (T = 100°C) 8.8 A C I (Note 1) Drain Current - Pulsed 56 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 990 mJ AS I Avalanche Current (Note 1) 14 A AR E (Note 1) Repetitive Avalanche Energy 20.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns P Power Dissipation (T = 25°C) 205 W D C - Derate above 25°C 1.64 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.61 °C/W θJC R Thermal Resistance, Case-to-Sink 0.24 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient -- 40 °C/W θJA ©2001 Rev. B, November 2001
