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IRFP90N20D
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
International
TOR Rectifier
SMPS MOSFET
PD - 94301A
IRFP90N20D
HEXFET® Power MOSFET
Applications Voss RDS max ID
. High frequency DC-DC converters (on)
200V 0.0239 94A©
Benefits
o Low Gate-to-Drain Charge to Reduce
Switching Losses
. Fully Characterized Capacitance Including
Effective Coss to Simplify Design, (See
App. Note AN1001)
o Fully Characterized Avalanche Voltage
and Current
T0-247AC
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V 94©
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 66 A
IDM Pulsed Drain Current co 380
PD @Tc = 25°C Power Dissipation 580 W
Linear Derating Factor 3.8 W/°C
V65 Gate-to-Source Voltage * 30 V
dv/dt Peak Diode Recovery dv/dt © 6.7 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rox: Junction-to-Case - 0.26
Recs Case-to-Sink, Flat, Greased Surface 0.24 - °C/W
ReJA Junction-to-Ambient - 40
Notes C) through © are on page 8
1
09/27/01
IRFP90N20D
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 - - V VGS = OV, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.24 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.023 n VGS = 10V, ID = 56A ©
Vesah) Gate Threshold Voltage 3.0 - 5.0 V Vos = VGs, ID = 250pA
loss Drain-to-Source Leakage Current - - 25 pA Vos = 200V, VGS = 0V
- - 250 Vos = 160V, Was = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 30V
Gate-to-Source Reverse Leakage - - -100 N/ss = -30V
Dynamic © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 39 - - S Vos = 50V, ID = 56A
% Total Gate Charge - 180 270 ID = 56A
Qgs Gate-to-Source Charge - 45 67 n0 Vos = 160V
di Gate-to-Drain ("Miller") Charge - 87 130 VGS = 10V, Ei)
td(on) Turn-On Delay Time - 23 - VDD = 100V
tr Rise Time - 160 - ns ID = 56A
taott) Turn-Off Delay Time - 43 - Rs = 1.29
tf Fall Time - 79 - VGS = 10V ©
Ciss Input Capacitance - 6040 - VGS = 0V
Coss Output Capacitance - 1070 - Vos = 25V
Crss Reverse Transfer Capacitance - 170 - pF f = 1.0MHz
Coss Output Capacitance - 8350 - VGS = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 420 - VGS = 0V, Vos = 160V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 870 - N/ss = 0V, Vros = 0V to 160V ©
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 1010 mJ
IAR Avalanche CurrentCD - 56 A
EAR Repetitive Avalanche Energy0) - 58 ml
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ _ 94© MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 380 integral reverse
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - - 1.5 V TJ = 25°C, Is = 56A, VGS = 0V ©
tn Reverse Recovery Time - 230 340 ns Tu = 25°C, IF = 56A
Qrr Reverse RecoveryCharge - 1.9 2.8 PC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
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