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IRFPF30IRN/a7375avai900V Single N-Channel HEXFET Power MOSFET in a TO-247AC package


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IRFPF30
900V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
[Internationall
[:i:te.tsit Rectifier
-9.618A
IRFPFSO
HEXFET® Power MOSFET
o Dynamic dv/dt Rating
Repetitive Avalanche Rated
Isolated Central Mounting Hole
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, Iow
on-resistance and
The TO-247 package is preferred for commercial-industrial applications
where higher power levels preclude the use of TO-220 devices. The TO-M
is similar but superior to the earlier TO-218 package because of its isolated
mounting hole. It also provides greater creepage distance between pins to
I/ross = 900V
cost-effectiveness.
meet the requirements of most safety specifications.
Absolute Maximum Ratings
TO-247AC
Parameter Max. Unite,
lo @ To = 2500 Continuous Drarnfiu_TiyCes @ 10 V 3.6
lo @ Tc = 100°C Continuous Drain Current, Vas @ 10 V 2_.3 ______ A
IDM Pulsed Drain Current (D 14
tagelzjgéégfiqwsrpgsieemee.eeeuweee__eu# 125 W ---e
-r__r__-_em-_.-_V_" 1rryy1rdllee1iiF1ctor, me“ --___" eeeeeee 1.0 _ *__J:/L°£Z,
Vss Gate-to-Source Voltage $20 V
EAS Single Pulse Avalanche Energy 2 170 md
IAR Avalanche Current co 3.6 A
EAR Repetitive Avalanche EneVCr) -4--------------- 13 s-----:--)-,),-:--,---;
dv/dt Peak Diode Recovery dv/dt 2 1.5 V/ns
TJ Operating Junction and -55 to +150
Tsm Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case) I
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1 N-m) . J
Thermal Resistance
Parameter Min. Typ. Max. Units 1
FUc Junction-to-Case -c, = 1 .O
Recs Case-to-Sink, Flat, Greased Surface - 0.24 .--9- °C/W
£93: Junction-to-Ambient - 'C' v - -‘m fp - L_ - _M
1RFPF30
Electrical Characteristics (ti) Tu-- 25°C (unless otherwise specified)
Parameter Min. 1 Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 900 - fl V - Vss=OV, ID: 250WA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 1.1 ---. VPC 'Reference to 25°C, kr-s 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 3.7 Q Ves=10V, |D=2.2A (io
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos=VGs, lo: 250uA
gfs Forward Transconductance 2.3 - - S Vns=100V, io=2.2A (4)
loss Drain-to-Source Leakage Current - - I 100 ILA 1/Ds=900V, VGS=OV
- -- 500 Vos=72OV, I/ss-HN, TJ=12SOC
less Gate-to-Source Forward Leakage - - 100 n A VGs=20V
Gate-to-Source Reverse Leakage - - -100 VGs=-2OV
09 Total Gate Charge -- - 78 |D=3.6A
Qgs Gate-to-Source Charge - -- 10 I VDs=360V
f2gd Gate-to-Drain ("Miller") Charge - - 42 Vss---10V See Fig. 6 and 13 GD
_td[on) Turn-On Delay Time - 14 - VDD=450V
tr Rise Time - 25 - ns b=3.6A
tam") Turn-Off Delay Time - 90 - Re=129
tr Fall Time - 30 - RD=12OQ See Figure 10 ©
Lo Internal Drain Inductance - 5.0 -- 2% ste.')
nH from package egg)
Ls Internal Source Inductance - 13 - and center of
F-" die contact
Ciss Input Capacitance - 1200 - Ncsr-04
Coss Output Capacitance - 320 - pF Vns=25V
Crss Reverse Transfer Capacitance - 200 - f=1.0MHz See Figure 5 ;
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max, Units Test Conditions
ls Continuous Source Current - - 3 6 MOSFET symbol D
.-- (Body Diode) . A showing the E:
ISM Pulsed Source Current __ - 14 integral rgverge G F-l-.
(Body Diode) (D p-n junction diode. s
Vso Diode Forward Voltage - - 1.8 V TJ=25°C, 13:3.6A. Vss--0V Co
trr Reverse Recovery Time - 430 650 ns TJ=2SOC, IF=3.6A
er Reverse Recovery Charge - 1.4 2.1 no di/dt---100A/p1s co
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lo)
Notes:
(D Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
(2) VDD=50V. starting TJ=25°C, L=24mH
RG:ZSQ. lAs=3.6A (See Figure 12)
C3) 15053.6A, di/de70A/ws, VDDSGOO ,
TJS150°C
© Pulse width f, 300 us; duty cycle 32%.
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