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IRFR120ZIRN/a25200avai100V Single N-Channel HEXFET Power MOSFET in a D-Pak package
IRFU120ZIRN/a3500avai100V Single N-Channel HEXFET Power MOSFET in a I-Pak package


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IRFR120Z-IRFU120Z
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International PD-94754
. . AUTOMOTIVE MOSFET IRFR120Z
s) R f
TOR ech Ier IRFU120Z
HEXFET© Power MOSFET
Features D
. Advanced Process Technology VDSS = 100V
. Ultra Low On-Resistance
o 175°C Operating Temperature
. Fast Switching G ' " RDS(on) - 190mQ
. Repetitive Avalanche Allowed up to Tjmax
I = 8.7A
Description
Specifically designed for Automotive applications, this HEXFETO
Power MOSFET utilizes the latest processing techniques to 1;;iii)),
achieve extremely low on-resistance per silicon area. Additional ''iiii's'"'1 G"
features of this design are a 175°C junction operating tempera- l, r
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficientand reliable device for usein Automotive applications and D-Pak l-Pak
a wide variety of other applications. IRFR120Z IRFU120Z
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 8.7
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 6.1 A
Iron, Pulsed Dram Current LO 35
PD @TC = 25°C Power Dissipation 35 W
Linear Derating Factor 0.23 W/°C
VGs Gate-to-Source Voltage f: 20 V
EAS(Thermallylimited) Single Pulse Avalanche Energy© 18 m J
EAS (Tested ) Single Pulse Avalanche Energy Tested Value © 20
IAR Avalanche Current CD See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy (5) m J
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 lbPin (1.1N'm)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 4.28
ROJA Junction-to-Amblent (PCB mount) © _ 40 "C/W
RoJA Junction-to-Ambient - 1 10
HEXFET© is a registered trademark of International Rectifier.
1
10/3/03

IRFR/J120Z
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefrcient - 0.084 - V/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - 150 190 mn vGS = 10v, ID = 5.2A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, ID = 250pA
gfs Forward Transconductance 16 - - S Vos = 25V, ID = 5.2A
loss Drain-to-Source Leakage Current - - 20 pA Vos = 100V, VGS = 0V
- - 250 Vos = 100V, VGS = 0V, T, = 125°C
loss Gate-to-Source Forward Leakage - - 200 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -200 VGS = -20V
Qg Total Gate Charge - 6.9 10 ID = 5.2A
Qgs Gate-to-Source Charge - 1.6 - nC Vos = 80V
di Gate-to-Drain ("Miller") Charge - 3.1 - VGS = 10V ©
td(on) Turn-On Delay Time -.-.- 8.3 -.-.- VDD = 50V
t, Rise Time - 26 - b = 5.2A
tam Turn-Off Delay Time - 27 - ns RG = 53 Q
t, Fall Time - 23 - VGS = 10V ©
u, Internal Drain Inductance - 4.5 - Between lead, D
nH 6mm (0.25in.) ir-, )
Ls Internal Source Inductance - 7.5 - from package Gk]
and center of die contact s
Ciss Input Capacitance - 310 - VGS = 0V
Coss Output Capacitance - 41 - Vos = 25V
Crss Reverse Transfer Capacitance - 24 - pF f = 1.0MHz
Coss Output Capacitance - 150 - VGS = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 26 - VGS = 0V, Vos = 80V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 57 - VGS = 0V, VDS = 0V to 80V ©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current - - 8.7 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 35 integral reverse a
(Body Diode) (D p-njunction diode. e
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, IS = 5.2A, VGS = 0V ©
trr Reverse Recovery Time - 24 36 ns T J = 25°C, IF = 5.2A, VDD = 50V
Qrr Reverse Recovery Charge - 23 35 nC di/dt = 100A/ps oo
ton FonNard Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2

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