IRFR18N15DTRPBF ,150V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters150V 0.125Ω 18A Lead-FreeBenefit ..
IRFR18N15DTRR ,150V Single N-Channel HEXFET Power MOSFET in a D-Pak packagePD- 93815AIRFR18N15DSMPS MOSFET IRFU18N15D®HEXFET Power MOSFET
IRFR1N60A ,600V Single N-Channel HEXFET Power MOSFET in a D-Pak package MOSFETIRFR1N60AIRFU1N60A HEXFET Power MOSFET Switch Mode Power Supply (S ..
IRFR210 ,200V Single N-Channel HEXFET Power MOSFET in a D-Pak packageInternational PD-9.526C
:I:f.iiT, Rectifier IRFR210
HEXFET® Power MOSFET IRFU21 O
0 Dynami ..
IRFR210TR ,200V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount
IRFR210TRL ,200V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications,
D. PAK l- PAK
TO-252AA TO-251AA
Absolute Maximum Ratings
Parameter Max. Uni ..
ISL78214ARZ , 4A Low Quiescent Current High Efficiency Synchronous Buck Regulator
ISL8009AIRZ-T , 1.5A Low Quiescent Current 1.6MHz High Efficiency Synchronous Buck Regulator
ISL8009AIRZ-T , 1.5A Low Quiescent Current 1.6MHz High Efficiency Synchronous Buck Regulator
ISL8011IRZ-T , 1.2A Integrated FETs, High Efficiency Synchronous Buck Regulator
ISL8011IRZ-T , 1.2A Integrated FETs, High Efficiency Synchronous Buck Regulator
ISL8012IRZ , 2A Low Quiescent Current 1MHz High Efficiency Synchronous Buck Regulator
IRFR18N15DTRPBF
150V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 95061A
International IRFR18N15DPbF
Tait Rectifier SMPS MOSFET IRFU18N15DPbF
HEXFET© Power MOSFET
Applications V R max I
q High frequency DC-DC converters DSS DS(on) D
. Lead-Free 150V 0.1259 18A
Benefits
0 Low Gate to Drain Charge to Reduce 14it git
Switching Losses Ri' l, Nie
0 Fully Characterized Capacitance Including I. _ ."
Effective Coss to Simplify Design, (See
App. Note AN1001)
q Fully Characterized Avalanche Voltage |RFR1DB-IS::DPbF |RFU1I0EJa1|5DPbF
and Current
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 18
ID @ To = 100°C Continuous Drain Current, l/ss @ 10V 13 A
IDM Pulsed Drain Current C) 72
PD @Tc = 25°C Power Dissipation 110 W
Linear Derating Factor 0.71 W/°C
VGS Gate-to-Source Voltage * 30 V
dv/dt Peak Diode Recovery dv/dt © 3.3 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range oc
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical SMPS Topologies
0 Telecom 48V input DC-DC Active Clamp Reset Forward Converter
Notes OD through © are on page 10
1
12/9/04
IlRFR/J18N15DlDbF International
TOR Rectifier
Static @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)ross Drain-to-Source Breakdown Voltage 150 - - V VGS = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.17 - V/°C Reference to 25°C, ID = 1mA ©
RDS(on) Static Drain-to-Source On-Resistance - - 0.125 Q VGS = 10V, ID = 11A (D
VGS(th) Gate Threshold Voltage 3.0 - 5.5 V VDs = VGs, ID = 250PA
loss Drain-to-Source Leakage Current - - 25 pA VDS = 150V, VGS = 0V
- - 250 VDs = 120V, VGs = 0V, TJ = 150°C
I Gate-to-Source Forward Leakage - - 100 nA VGS = 30V
GSS Gate-to-Source Reverse Leakage - - -100 I/cs = -30V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 4.2 - - S VDS = UN, ID = 11A
% Total Gate Charge - 28 43 ID = 11A
Qgs Gate-to-Source Charge - 7.6 11 nC Vos = 120V
di Gate-to-Drain ("Miller") Charge - 14 21 VGS = 10V, ©
lawn) Turn-On Delay Time - 8.8 - VDD = 75V
tr Rise Time - 25 - ns lo = 11A
ttmatt) Turn-Off Delay Time - 15 - Rs = 6.89
" Fall Time - 9.8 - VGS = 10V 6)
Ciss Input Capacitance - 900 - VGs = 0V
Coss Output Capacitance - 190 - Vos = 25V
Crss Reverse Transfer Capacitance - 49 - pF f = 1.0MHz
Coss Output Capacitance - 1160 - N/ss = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 88 - VGS = 0V, V93 = 120V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 95 - VGs = 0V, VDs = 0V to 120V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 200 mJ
IAR Avalanche CurrentCD - 11 A
EAR Repetitive Avalanche Energy© - 11 mJ
Thermal Resistance
Parameter Typ. Max. Units
Rea: Junction-to-Case - 1 .4
ReJA Junction-to-Ambient (PCB mount)' - 50 °CNV
ReJA Junction-to-Ambient - 110
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 18 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 72 integral reverse G
(Body Diode) (D p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 11A, VGS = 0V (D
tn Reverse Recovery Time - 130 190 ns Tu = 25°C, IF = 11A
Qrr Reverse RecoveryCharge - 660 980 nC di/dt = 100A/ps 6)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+LD)
2
