IRFR1N60A ,600V Single N-Channel HEXFET Power MOSFET in a D-Pak package MOSFETIRFR1N60AIRFU1N60A HEXFET Power MOSFET Switch Mode Power Supply (S ..
IRFR210 ,200V Single N-Channel HEXFET Power MOSFET in a D-Pak packageInternational PD-9.526C
:I:f.iiT, Rectifier IRFR210
HEXFET® Power MOSFET IRFU21 O
0 Dynami ..
IRFR210TR ,200V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount
IRFR210TRL ,200V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications,
D. PAK l- PAK
TO-252AA TO-251AA
Absolute Maximum Ratings
Parameter Max. Uni ..
IRFR214 ,250V Single N-Channel HEXFET Power MOSFET in a D-Pak packagePD-9.703A
International
1:212 Rectifier IRFR214
HEXFET® Power MOSFET IR FU21 4
q Dynamic ..
IRFR214TR ,250V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Power dissipation levels up to 1.5 watts
are possible m typical surface mount
ISL78214ARZ , 4A Low Quiescent Current High Efficiency Synchronous Buck Regulator
ISL8009AIRZ-T , 1.5A Low Quiescent Current 1.6MHz High Efficiency Synchronous Buck Regulator
ISL8009AIRZ-T , 1.5A Low Quiescent Current 1.6MHz High Efficiency Synchronous Buck Regulator
ISL8011IRZ-T , 1.2A Integrated FETs, High Efficiency Synchronous Buck Regulator
ISL8011IRZ-T , 1.2A Integrated FETs, High Efficiency Synchronous Buck Regulator
ISL8012IRZ , 2A Low Quiescent Current 1MHz High Efficiency Synchronous Buck Regulator
IRFR1N60A-IRFU1N60A
600V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
TOR. Rectifier
Applications
o Switch Mode Power Supply (SMPS)
o Uninterruptable Power Supply
0 Power Factor Correction
Benefits
o Low Gate Charge Qg results in Simple
Drive Requirement
o Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
o Fully Characterized Capacitance and
Avalanche Voltage and Current
Absolute Maximum Ratings
SMPS MOSFET
PD - 91846B
|RFR1N60A
|RFU1N60A
HEXFET® Power MOSFET
Voss Rds(on) max ID
600V 7.09 1.4A
l, ' ' s,'s,
D-Pak I-Pak
|RFR1N60A |RFU1N60A
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGs @ 10V 1.4
ID @ TC = 100°C Continuous Drain Current, VGs @ 10V 0.89 A
IDM Pulsed Drain Current C) 5.6
PD @Tc = 25°C Power Dissipation 36 W
Linear Derating Factor 0.28 W/''C
N/ss Gate-to-Source Voltage i 30 V
dv/dt Peak Diode Recovery dv/dt © 3.8 V/ns
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Applicable Off Line SMPS Topologies:
. Low Power Single Transistor Flyback
Notes co through (S) are on page 9
1
3/7/03
IRFlR/U1 N6OA International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRpss Drain-to-Source Breakdown Voltage 600 - - V VGS = 0V, ID = 250PA
Rosmn) Static Drain-to-Source On-Resistance - - 7.0 Q VGS = 10V, ID = 0.84A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGs, ID = 250PA
lass Drain-to-Source Leakage Current - - 25 pA VDS = 600V, VGS = 0V
- - 250 Vos = 480V, I/ss = 0V, To = 150°C
Gate-to-Source Forward Leakage - - 100 VGs = 30V
IGSS Gate-to-Source Reverse Leakage - - -100 nA VGS = -30V
Dynamic @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
9ts Forward Transconductance 0.88 - - S Vros = 50V, ID = 0.84A
% Total Gate Charge - - 14 ID = 1.4A
Qgs Gate-to-Source Charge -- - 2.7 nC VDs = 400V
di Gate-to-Drain ("Miller") Charge - - 8.1 VGs = 10V, See Fig. 6 and 13 ©
tdwn) Turn-On Delay Time - 9.8 - VDD = 250V
tr Rise Time - 14 - ns ID = 1.4A
td(off) Turn-Off Delay Time - 18 - Rs = 2.159
tr Fall Time - 20 - Ro = 178Q,See Fig. 10 ©
Ciss Input Capacitance - 229 - VGs = 0V
Coss Output Capacitance - 32.6 - Vos = 25V
Crss Reverse Transfer Capacitance - 2.4 - pF f = 1.0MHz, See Fig. 5
Cass Output Capacitance - 320 - VGS = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 11.5 - l/ss = 0V, VDs = 480V, f = 1.0MHz
Cass eff. Effective Output Capacitance - 130 - I/ss = 0V, Vos = 0V to 480V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAs Single Pulse Avalanche Energy© - 93 mJ
IAR Avalanche Current© - 1.4 A
EAR Repetitive Avalanche Energy0) - 3.6 mJ
Thermal Resistance
Parameter Typ. Max. Units
Rea: Junction-to-Case - 3.5
ReJA Junction-to-Ambient (PCB mount)© - 50 °C/W
ReJA Junction-to-Ambient - 1 10
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ _ 1 4 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) co - - 5.6 p-n junction diode. s
va, Diode Forward Voltage - - 1.6 V To = 25°C, Is = 1.4A, VGS = 0V ©
trr Reverse Recovery Time - 290 440 ns To = 25°C, IF = 1.4A
Qrr Reverse RecoveryCharge - 510 760 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
2
