IRFR2405 ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFR2405TRPBF , Advanced Process Technology
IRFR2407 ,75V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFR2407TRLPBF ,75V Single N-Channel HEXFET Power MOSFET in a D-Pak packageInternational
TOR Rectifier“mm seDe
urf‘éce Mount (IRFR2407)
Straight Lead (IRFU2407)
Advance ..
IRFR24N15D ,150V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters150V 95mΩ 24ABenefits Low Gate-t ..
IRFR24N15DPBF , HEXFET®Power MOSFET
ISL81487LIP ,15kV ESD Protected/ 1/8 Unit Load/ 5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversFeaturesLow Power, High Speed or Slew Rate • RS-485 I/O Pin ESD Protection . . . . . . . . . . . . ..
ISL83070EIBZA , -15kV ESD Protected, 3.3V, Full Fail-safe, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers
ISL83072EIUZA-T , -15kV ESD Protected, 3.3V, Full Fail-safe, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers
ISL83075EIBZA , -15kV ESD Protected, 3.3V, Full Fail-safe, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers
ISL83075EIBZA , -15kV ESD Protected, 3.3V, Full Fail-safe, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers
ISL83078EIBZA , ±15kV ESD Protected, 3.3V, Full Fail-safe, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers
IRFR2405
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
TOR Rectifier
Surface Mount (IRFR2405)
Straight Lead (IRFU2405)
Advanced Process Technology
Dynamic dv/dt Rating
Fast Switching
0 Fully Avalanche Rated
Description
Seventh Generation HEXFETO Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
PD - 93861
IRFR2405
IRFU2405
HEXFET6 Power MOSFET
VDSS = 55V
RDS(on) = 0.0169
ID = 56A©
hole mounting applications. Power dissipation levels D-Pak I-Pak
up to 1.5 watts are possible in typical surface mount IRFR2405 IRFU2405
applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Ves @ 10V 56©
ID @ To = 100°C Continuous Drain Current, VGS @ 10V 40© A
IDM Pulsed Drain Current C) 220
Po @Tc = 25°C Power Dissipation 110 W
Linear Derating Factor 0.71 Wl°C
VGS Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy© 130 mJ
IAR Avalanche Current0) 34 A
EAR Repetitive Avalanche Energy0) 11 m]
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range oC
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
Reuc Junction-to-Case - 1.4
ReJA Junction-to-Ambient (PCB mount)* - 50 °C/W
ReJA Junction-to-Ambient - 1 10
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
1
3/1/00
|RFR/U2405
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGS = 0V, ID = 250pA
AV
Roson) Static Drain-to-Source On-Resistance - 0.0118 0.016 Q VGS = 10V, ID = 34A 0)
Vegan) Gate Threshold Voltage 2.0 - 4.0 V Ws = 10V, ID = 250PA
gts Forward Transconductance 30 - - S I/os = 25V, ID = 34A
loss Drain-to-Source Leakage Current - - 20 pA Vros = 55V, VGS = 0V
- - 250 Vos = 44V, VGs = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 200 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -200 VGS = -20V
ch Total Gate Charge - 70 110 ID = 34A
Qgs Gate-to-Source Charge - 16 23 nC Ws = 44V
di Gate-to-Drain ("Miller") Charge - 19 29 VGS = 10V©
tdon) Turn-On Delay Time - 15 - VDD = 28V
tr Rise Time - 130 - ns ID = 34A
tum) Turn-Off Delay Time - 55 - Rs = 6.89
tf Fall Time - 78 - Vss = 10V ©
u, Internal Drain Inductance - 4.5 - 2,tr/in/el,1i' Q D
from package G
Ls Internal Source Inductance - 7.5 - and center of die contact S
Ciss Input Capacitance - 2430 - VGS = 0V
Coss Output Capacitance - 470 - pF Ws = 25V
Crss Reverse Transfer Capacitance - 100 - f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 2040 - VGS = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 350 - VGS = 0V, Vos = 44V, f = 1.0MHz
Coss eff. Effective Output Capacitance © - 350 - Was = 0V, l/DS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 56© A showing the
ISM Pulsed Source Current - - 220 integral reverse G
(Body Diode) co p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25°C, ls = 34A, VGS = 0V Cr)
trr Reverse Recovery Time - 62 93 ns T J = 25°C, IF = 34A
Qrr Reverse RecoveryCharge - 170 260 nC di/dt = 100A/us ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
CO Repetitive rating; pulse width limited by
max. junction temperature.
© Starting TJ = 25°C, L = 0.22mH
RG = 25n, IAS = 34A.
© Iso I 34A, di/dt s 190A/ps, N/oo s V(BR)DSS,
TJs 175°C
© Pulse width 3 300ps; duty cycle 3 2%.
(9 Coss eff. is a Fixed capacitance that gives the same charging time
as Coss while Vros is rising from 0 to 80% Wss
© Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A
