IRFR24N15D ,150V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters150V 95mΩ 24ABenefits Low Gate-t ..
IRFR24N15DPBF , HEXFET®Power MOSFET
IRFR24N15DTRPBF ,150V Single N-Channel HEXFET Power MOSFET in a D-Pak package IRFR24N15DPbF IRFU24N15DPbFHEXFET Power MOSFET
IRFR24N15DTRPBF ,150V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters150V 95mΩ 24ABenefits Low Gate-t ..
IRFR2607Z ,75V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.IRFU2607ZPbFIRFR2607ZPbFAbsolute Maximum RatingsParameter UnitsMax.Continuous Drain Cu ..
IRFR2607ZTRPBF ,75V Single N-Channel HEXFET Power MOSFET in a D-Pak packageFeatures®HEXFET Power MOSFET
IRFR24N15D
150V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 94392
International IRFR24N15D
TOR Rectifier SMPS MOSFET IRFU24N15D
HEXFET© Power MOSFET
Applications
V R max I
. High frequency DC-DC converters DSS DS(on) D
150V 95mf2 24A
Benefits
o Low Gate-to-Drain Charge to Reduce
Switching Losses
o Fully Characterized Capacitance Including
Effective Coss to Simplify Design, (See
App. Note AN1001)
o Fully Characterized Avalanche Voltage D-Pak l-Pak
and Current IRFR24N15D IRFU24N15D
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, I/cs @ 10V 24
ID @ Tc = 100°C Continuous Drain Current, l/cs @ 10V 17 A
IDM Pulsed Drain Current C) 96
PD @Tc = 25°C Power Dissipation 140 W
Linear Derating Factor 0.92 W/°C
I/ss Gate-to-Source Voltage i 30 V
dv/dt Peak Diode Recovery dv/dt S 4.9 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 1 .1
ROJA Junction-to-Ambient (PCB mount)' - 50 "CAN
ROJA Junction-to-Ambient - 110
Notes CO through co are on page 10
1
03/14/02
IRFR24N15D/IRFU24N15D
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 150 - - V VGS = 0V, ID = 250pA
AV(BR)DSgATJ Breakdown Voltage Temp. Coemcient - 0.18 - V/°C Reference to 25°C, ID = 1mA ©
Roswn) Static Drain-to-Source On-Resistance - 82 95 mn VGs = 10V, ID = 14A ©
VGS(th) Gate Threshold Voltage 3.0 - 5.0 V VDs = VGs, ID = 250PA
loss Drain-to-Source Leakage Current - - 25 pA 1/ros = 150V, VGS = 0V
- - 250 VDs = 120V, VGS = 0V, To = 150°C
ks Gate-to-Source Forward Leakage - - 100 n A VGS = 30V
SS Gate-to-Source Reverse Leakage - - -100 VGs = -30V
Dynamic © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
9ts Forward Transconductance 8.2 - - S Vos = 25V, ID = 14A
09 Total Gate Charge .-.- 30 45 ID = 14A
Qgs Gate-to-Source Charge - 7.4 11 no Vos = 120V
di Gate-to-Drain ("Miller") Charge - 17 26 N/ss = 10V, (9
tdwn) Turn-On Delay Time - 11 - VDD = 75V
tr Rise Time - 53 - ns ID = 14A
tdott) Turn-Off Delay Time - 19 - Rs = 6.89
tr Fall Time - 15 - VGS = 10V ©
Ciss Input Capacitance - 890 - VGS = 0V
Coss Output Capacitance - 220 - Vos = 25V
Crss Reverse Transfer Capacitance - 46 - pF f = 1.0MHz
Cass Output Capacitance - 1460 - Vss = 0V, VDs = 1.0V, f = 1.0MHz
Cass Output Capacitance - 95 - VGs = 0V, VDs = 120V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 200 - VGS = 0V, Vos = 0V to 120V ©
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 170 mJ
IAR Avalanche CurrentC0 - 14 A
EAR Repetitive Avalanche Energy© - 14 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - _ 24 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) © - - 96 p-n junction diode. s
I/so Diode Forward Voltage - - 1.5 V TJ = 25°C, Is = 14A, VGS = 0V ©
trr Reverse Recovery Time - 110 - ns TJ = 25°C, IF = 14A
Qrr Reverse RecoveryCharge - 450 - nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
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