IRFR330BTM ,400V N-Channel B-FET / Substitute of IRFR330AFeaturesThese N-Channel enhancement mode power field effect • 4.5A, 400V, R = 1.0Ω @V = 10 VDS(on) ..
IRFR3410 ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak package IRFR3410 IRFU3410HEXFET Power MOSFET
IRFR3411 ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFR3411TR ,Leaded 100V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFR3412 ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplications Switch Mode Power Supply (SMPS) V R max IDSS DS(on) D Motor Drive100V 0.025Ω 48AB ..
IRFR3412PBF , SMPS MOSFET
ISL83385EIA ,15kV ESD Protected/ +3V to +5.5V/ +/-1 Microamp/ 250kbps/ RS-232 Transmitters/ReceiversISL83385ETMData Sheet January 2001 File Number 600115kV ESD Protected, +3V to +5.5V,
ISL83385EIB ,15kV ESD Protected/ +3V to +5.5V/ +/-1 Microamp/ 250kbps/ RS-232 Transmitters/Receiversfeatures of each• Any System Requiring RS-232 Communication Portsdevice comprising the 3V RS-232 fa ..
ISL83386EIV ,15kV ESD Protected/ +3V to +5.5V/ 1 Microamp/ 250kbps/ RS-232 Transmitters/Receivers with Separate Logic Supplyapplications are PDAs, Palmtops, and cell phones where the Meets EIA/TIA-232 and V.28/V .24 Speci ..
ISL83386EIV-T ,15kV ESD Protected/ +3V to +5.5V/ 1 Microamp/ 250kbps/ RS-232 Transmitters/Receivers with Separate Logic SupplyFeatures1 Microamp, 250kbps, RS-232 V Pin for Compatibility with Mixed Voltage SystemsLTransmitter ..
ISL83387EIV ,+/-15kV ESD Protected/+3#V to +5.5V/ 1Microamp/ 250kbps/ RS-232 Transceivers with Enhanced Automatic Powerdown and a Separate Logic Supplyapplications are PDAs, Palmtops, 0.1μF Capacitorsand notebook and laptop computers where the low op ..
ISL83387EIVZ-T , /-15kV ESD Protected, 3V to 5.5V, 1Microamp, 250kbps, RS-232 Transceivers with Enhanced Automatic Powerdown and a Separate Logic Supply
IRFR330BTM
400V N-Channel B-FET / Substitute of IRFR330A
IRFR330B / IRFU330B November 2001 IRFR330B / IRFU330B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.5A, 400V, R = 1.0Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 25 nC) planar, DMOS technology. • Low Crss ( typical 20 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge. D !!!!!!!! D ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● I-PAK D-PAK GS IRFR Series IRFU Series GS D !!!!!!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter IRFR330B / IRFU330B Units V Drain-Source Voltage 400 V DSS I - Continuous (T = 25°C) Drain Current 4.5 A D C - Continuous (T = 100°C) 2.9 A C I (Note 1) Drain Current - Pulsed 18 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 330 mJ AS I Avalanche Current (Note 1) 4.5 A AR E (Note 1) Repetitive Avalanche Energy 4.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Power Dissipation (T = 25°C) * 2.5 W P A D Power Dissipation (T = 25°C) 48 W C - Derate above 25°C 0.38 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J stg Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.6 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 50 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 110 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. B, November 2001
