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IRFR3418TRPBFIRN/a89avai80V Single N-Channel HEXFET Power MOSFET in a D-Pak package


IRFR3418TRPBF ,80V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsV R Max IDSS DS(on) D High frequency DC-DC converters Lead-Free80V 14m

IRFR3418TRPBF
80V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
TOR Rectifier
PD - 95516A
|RFR3418PbF
|RFU3418PbF
HEXFET© Power MOSFET
A lications
o pIPIigh frequency DC-DC converters VDSS RDS(on) Max ID
q Lead-Free 80V 14mf2 30A
Benefits
0 Low Gate-to-Drain Charge to Reduce
Switching Losses Q).
0 Fully Characterized Capacitance Including 14iiit 'Ri'
Effective Coss to Simplify Design, (See "Ir,'. I.
App. Note AN1001) _
q Fully Characterized Avalanche Voltage
and Current D-Pak l-Pak
IRFR3418 IRFU3418
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 80 V
VGS Gate-to-Source Voltage i 20
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 70©
ID @ To = 100°C Continuous Drain Current, VGS @ 10V 50 A
IDM Pulsed Drain Current CD 280
PD @Tc = 25''C Maximum Power Dissipation 140 W
Pro @TA = 25°C Maximum Power Dissipation 3.8
Linear Derating Factor 0.95 W/''C
dv/dt Peak Diode Recovery dv/dt © 5.2 V/ns
To Operating Junction and -55 to + 175 °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rom Junction-to-Case .- 1.05
ROJA Junction-to-Ambient (PCB Mount) * - 40 "C/W
ROJA Junction-to-Ambient - 110
Notes co through © are on page 10
1
12/03/04

IRFR/U3418PbF
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 80 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.08 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 11.5 14 mg; VGS = 10V, ID = 18A ©
VGS(th) Gate Threshold Voltage 3.5 - 5.5 V Vos = VGS, ID = 250pA
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 80V, VGS = 0V
- - 250 l/ns = 64V, VGS = 0V, T: = 150°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
Dynamic @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 66 - - S Vos = 25V, ID = 18A
09 Total Gate Charge - 63 94 ID = 18A
095 Gate-to-Source Charge - 23 - nC Vos = 40V
di Gate-to-Drain ("Miller") Charge - 23 - Vss = 10V ©
td(on) Turn-On Delay Time - 24 - Va, = 40V
t, Rise Time - 72 - ID = 18A
td(off) Turn-Off Delay Time - 41 - ns Rs = 6.89
tr Fall Time - 27 - VGS = 10V ©
Ciss Input Capacitance - 3510 - VGS = 0V
Cass Output Capacitance - 330 - Ws = 25V
Crss Reverse Transfer Capacitance - 190 - pF f = 1.0MHz
Coss Output Capacitance - 1220 - VGS = 0V, Ws = 1.0V, f = 1.0MHz
Cass Output Capacitance - 240 - VGS = 0V, Vos = 64V, f = 1.0MHz
Cass eff. Effective Output Capacitance - 360 - VGS = 0V, Vos = 0V to 64V ©
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy©© _ 260 mJ
IAR Avalanche Current CD - 18 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 70 A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 280 integral reverse G
(Body Diode) C)6) p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, IS = 18A, VGs = 0V ©
trr Reverse Recovery Time - 57 - ns Tu = 150°C, IF = 18A, VDD = 25V
Qrr Reverse Recovery Charge - 130 - nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2

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