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IRFR3504ZTRPBF
40V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 95521 B
riterryottyol lRFR3504ZPbF
ISER Rectifier IFlFU3504ZPbF
Features HEXFET® Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax G
Lead-Free
VDSS = 40V
RDS(on) = 9.0mQ
ID = 42A
Description
This H EXFETQ Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance persilicon area. Additionalfeatures ttjji)it, 4iit)
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating.These features combine
to make this design an extremely efficient and
. . . . . D-Pak I-Pak
rellalble' device for use In a wide variety of IRFR3504ZPbF IRFU3504ZPbF
applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 77
ID @ Tc = 100°C Continuous Drain Current, l/es @ 10V 54 A
ID © TC = 25°C Continuous Drain Current, Vss @ 10V (Package Limited) 42
IDM Pulsed Drain Current OD 310
PD @TC = 25°C Power Dissipation 90 W
Linear Derating Factor 0.60 W/°C
VGS Gate-to-Source Voltage A 20 V
EAS (Thermallylimited) Single Pulse Avalanche Energy© 77 mJ
EAS(Tested ) Single Pulse Avalanche Energy Tested Value © 110
IAR Avalanche Current OD See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy © mJ
To Operating Junction and -55 to + 175
Tsms Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 lbf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - 1.66
RNA Junction-to-Amblent (PCB mount) © _ 4O ''C/W
ReJA Junction-to-Ambient - 110
HEXFETO is a registered trademark of International Rectifier.
1
09/27/10
IRFR/U3504ZPbF
International
TOR Rectifier
Electrical Characteristics @ T,, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 - --.- V Vss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.032 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 8.23 9.0 mn Vas = 10V, ID = 42A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V l/ns = Vss, ID = 250pA
gfs Forward Transconductance 32 - -- S Vrss = 10V, ID = 42A
loss Drain-to-Source Leakage Current - - 20 pA Vos = 40V, l/ss = 0V
- - 250 Vos = 40V, Vas = OV, TJ = 125°C
less Gate-to-Source Forward Leakage - - 200 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -200 l/ss = -20V
q, Total Gate Charge -- 30 45 ID = 42A
As Gate-to-Source Charge - 9.6 - nC Vos = 32V
di Gate-to-Drain ("Miller") Charge - 12 - Ves = 10V ©
td(on) Turn-On Delay Time - 15 - VDD = 20V
t, Rise Time - 74 - ID = 42A
td(off) Turn-Off Delay Time -- 30 -- ns Rs = 15 Q
t, Fall Time - 38 - Vss = 10V ©
Lo Internal Drain Inductance - 4.5 - Between lead, D
nH 6mm (0.25in.) IC-' l
Ls Internal Source Inductance - 7.5 - from package 6&4 /
and center of die contact s
Ciss Input Capacitance - 1510 - Vss = 0V
Cass Output Capacitance - 340 - Vos = 25V
Crss Reverse Transfer Capacitance - 190 - pF f = 1.0MHz
Cass Output Capacitance - 1100 - Vss = OV, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance -- 34o -- Vss = OV, Vos = 32v, f = 1.0MHz
Coss eff. Effective Output Capacitance - 460 - Ves = 0V, Vos = 0V to 32V ©
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 42 MOSFET symbol D
(Body Diode) A showing the Lt
ISM Pulsed Source Current - - 310 integral reverse 6 (nd.
(Body Diode) OD p-n junction diode. a.
VSD Diode Forward Voltage -- - 1.3 V TJ = 25°C, Is = 42A, VGS = 0V ©
tr, Reverse Recovery Time --- 18 27 ns TJ = 25°C, IF = 42A, VDD = 20V
Qrr Reverse Recovery Charge - 9.2 14 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
