IRFR3505TRLPBF ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFR3518 ,80V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplications High frequency DC-DC convertersV R max IDSS DS(on) D 80V 29m 30ABenefits Low Gate ..
IRFR3518TRPBF ,80V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplications High frequency DC-DC convertersV R max IDSS DS(on) D Lead-Free 80V 29m 30ABenefit ..
IRFR3607 ,75V Single N-Channel HEXFET Power MOSFET in a D-Pak package IRFR3607PbFIRFU3607PbF
IRFR3607PBF ,75V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsHigh Efficiency Synchronous Rectification inSMPSHEXFET Power MOSFETUninterruptibl ..
IRFR3704 ,20V Single N-Channel HEXFET Power MOSFET in a D-Pak packageIRFR3704SMPS MOSFETIRFU3704
ISL83485IB ,3.3V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications.• -7V to +12V Common Mode Input Voltage RangeData rates up to 10Mbps are achievable by ..
ISL83485IBZ , 3.3V, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers
ISL83485IBZ , 3.3V, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers
ISL83485IP ,3.3V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversApplicationsDriver (Tx) outputs are short circuit protected, even for • Factory Automationvoltages ..
ISL83488IB ,3.3V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications. • Level Translators (e.g., RS-232 to RS-422)The ISL83488 and ISL83490 are offered in ..
ISL83490IB ,3.3V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications not requiring Rx and Tx • RS-232 “Extension Cords”output disable functions (e.g., poin ..
IRFR3505TRLPBF
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD-95511B
International lFlFR3505PbF
TOR Rectifier IRFU3505PbF
Features HEXFET® Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance D
175°C Operating Temperature VDSS - 55V
Fast Switching
Repetitive Avalanche Allowed up to ijax - RDS(on) = 0.0139
Lead-Free G
ID = 30A
Description
This HEXFETD Power MOSFET utilizesthe latest processing
techniques to achieve extremely low on-resistance per
junction operating temperature, fast switching speed and 1tiit
improved repetitive avalanche rating. These features Ri', t sC_' '
silicon area. Additional features of this product are a 175°C
combine to make this design an extremely efficient and 's
reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight D-Pak l-Pak
lead version (IRFU series) is for through-hole mounting IRFR3505PbF IRFU3505PbF
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vas @ 10V (Silicon limited) 71
ID © Tc = 100°C Continuous Drain Current, Vas @ 10V (See Fig.9) 49 A
ID © To = 25°C Continuous Drain Current, Vai; @ 10V (Package limited) 30
IBM Pulsed Drain Current OD 280
PD @Tc = 25°C Power Dissipation 140 W
Linear Derating Factor 0.92 W/°C
Vas Gate-to-Source Voltage t 20 V
EAS Single Pulse Avalanche Energy© 210 mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value© 410
IAR Avalanche Current© See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy© mJ
dv/dt Peak Diode Recovery dv/dt © 4.0 V/ns
To Operating Junction and -55 to + 175
Tsms Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rout: Junction-to-Case - 1 .09
ROJA Junction-to-Ambient (PCB mount)© - 4O °C/W
RQJA Junction-to-Ambient - 1 10
1
09/27/10
|RFR/U3505PbF
International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bmpss Drain-to-Source Breakdown Voltage 55 - - V l/ss = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.057 - V/°C Reference to 25°C, ID = 1mA
RDs(on) Static Drain-to-Source On-Resistance - 0.011 0.013 n Vss = 10V, ID = 30A (0
Vegan) Gate Threshold Voltage 2.0 - 4.0 V VDs = 10V, ID = 250pA
gfs Forward Transconductance 41 - - S Vos = 25V, ID = 30A
bss Drain-to-Source Leakage Current - - 20 PA Vros = 55V, Vas = 0V
- - 250 Vos = 55V, Vas = 0V, To = 125°C
less Gate-to-Source Forward Leakage - - 200 n A Vss = 20V
Gate-to-Source Reverse Leakage - - -200 Vss = -20V
ch Total Gate Charge - 62 93 ID = 30A
Qgs Gate-to-Source Charge - 17 26 nC Vos = 44V
di Gate-to-Drain ("Miller") Charge - 22 33 Vss = 10V@
tdm) Turn-On Delay Time - 13 - VDD = 28V
t, Rise Time - 74 - lo = 30A
td(0ff) Turn-Off Delay Time - 43 - ns Rs = 6.89
if Fall Time - 54 - VGS = 10V ©
u, Internal Drain Inductance - 4.5 - Between tad: D
nH 6mm (0.25in.) E )
from package G
LS Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 2030 - Vias = 0V
Cass Output Capacitance - 470 - pF VDs = 25V
Crss Reverse Transfer Capacitance - 91 - f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 2600 - Vas = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 330 - VGS = 0V, VDS = 44V, f = 1.0MHz
Coss eff. Effective Output Capacitance s - 630 - I/ss = 0V, Vos = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current - - 71 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) OD - - 280 p-n junction diode. s
VsD Diode Forward Voltage - - 1.3 V Tu = 25°C, IS = 30A, l/ss = 0V (0
trr Reverse Recovery Time - 70 105 ns Tu = 25°C, IF = 30A, VDD = 28V
a,, Reverse RecoveryCharge .-__ 180 270 nC di/dt = 1OOA/us (4)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes (D through are on page 11
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