IRFR3518 ,80V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplications High frequency DC-DC convertersV R max IDSS DS(on) D 80V 29m 30ABenefits Low Gate ..
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IRFR3607 ,75V Single N-Channel HEXFET Power MOSFET in a D-Pak package IRFR3607PbFIRFU3607PbF
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ISL83485IB ,3.3V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications.• -7V to +12V Common Mode Input Voltage RangeData rates up to 10Mbps are achievable by ..
ISL83485IBZ , 3.3V, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers
ISL83485IBZ , 3.3V, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers
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ISL83488IB ,3.3V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications. • Level Translators (e.g., RS-232 to RS-422)The ISL83488 and ISL83490 are offered in ..
ISL83490IB ,3.3V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications not requiring Rx and Tx • RS-232 “Extension Cords”output disable functions (e.g., poin ..
IRFR3518
80V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
TOR Rectifier
Applications
PD - 94523
|RFR3518
lRFU3518
HEXFET© Power MOSFET
o High frequency DC-DC converters Voss RDS(on) max li,
80V 29mf2 30A
Benefits
q Low Gate-to-Drain Charge to Reduce
Switching Losges . . ' "s ,3; s1iiiit V
0 Fully Characterized Capacitance Including 's l. ' vs.,"'s-_ .
Effective Cogs to Simplify Design, (See l,
App. Note AN1001)
. Fully Characterized Avalanche Voltage D-Pak l-Pak
and Current IRFR3518 IRFU3518
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 80 V
Vas Gate-to-Source Voltage 1 20
lo @ To = 25°C Continuous Drain Current, l/ss © 10V 38
lo © To = 100°C Continuous Drain Current, Vss © 10V 27 A
G, Pulsed Drain Current Ci) 150
PD @Tc = 25°C Power Dissipation 110 W
Linear Derating Factor 0.71 W/°C
dv/dt Peak Diode Recovery dv/dt © 5.2 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ch Junction-to-Case - 1 .4
RNA Junction-to-Ambient (PCB mount)© - 40 "C/W
Ras Junction-to-Ambient - 1 10
Notes C) through © are on page 10
1
09/23/02
IRFR3518/lRFU3518 International
TOR Rectifier
Static © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 80 - - V 1/ss = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.09 - V/°C Reference to 25°C, ID = 1mA ©
Roswn) Static Drain-to-Source On-Resistance - 24 29 mn Vss = 10V, ID = 18A (D
Vssith) Gate Threshold Voltage 2.0 - 4.0 V VDs = I/ss, ID = 250pA
loss Drain-to-Source Leakage Current - - 20 pA Vos = 80V, Vss = 0V
- - 250 Vos = 64V, VGS = OV, TJ = 150°C
I Gate-to-Source Forward Leakage - - 200 n A 1/ss = 20V
GSS Gate-to-Source Reverse Leakage - - -200 Vss = -20V
Dynamic @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 34 - - s Wm = 25V, ID = 18A
% Total Gate Charge - 37 56 ID = 18A
Qgs Gate-to-Source Charge - 11 - nC VDs = 40V
di Gate-to-Drain ("Miller") Charge - 12 - VGs = 10V (0
tarm) Turn-On Delay Time - 12 - VDD = 40V
t, Rise Time - 25 - ns ID = 18A
Wort) Turn-Off Delay Time - 37 - Rs = 9.19
tt Fall Time - 13 - l/ss = 10V co
Ciss Input Capacitance - 1710 - Vss = 0V
Cass Output Capacitance - 270 - VDS = 25V
Crss Reverse Transfer Capacitance - 33 - pF f = 1.0MHz
Coss Output Capacitance - 1780 - VGS = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 170 - 1/ss = 0V, Vos = 64V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 330 - I/tss = 0V, VDS = 0V to 64V S
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 160 mJ
IAR Avalanche CurrentCD - 18 A
EAR Repetitive Avalanche Energy© - 11 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
. - - 38 .
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) (D - - 150 p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V Tu = 25°C, ls = 18A, l/ss = 0V ©
trr Reverse Recovery Time - 77 - ns TI, = 25°C, IF = 18A
G, Reverse RecoveryCharge - 210 - nC di/dt = 100A/ps (4)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
2
