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IRFR3518TRPBFIRN/a1000avai80V Single N-Channel HEXFET Power MOSFET in a D-Pak package
IRFU3518PBFIRN/a4000avai100V Single N-Channel HEXFET Power MOSFET in a I-Pak package


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IRFR3518TRPBF-IRFU3518PBF
80V Single N-Channel HEXFET Power MOSFET in a D-Pak package
1
12/03/04
IRFR3518PbF
IRFU3518PbF
HEXFETPower MOSFETDSSRDS(on) maxID
80V29m30A
ParameterMax.Units

VDSDrain-to-Source Voltage80V
VGSGate-to-Source Voltage ± 20
ID @ TC = 25°CContinuous Drain Current, VGS @ 10V38
ID @ TC = 100°CContinuous Drain Current, VGS @ 10V27A
IDMPulsed Drain Current 150
PD @TC = 25°CPower Dissipation110W
Linear Derating Factor0.71W/°C
dv/dtPeak Diode Recovery dv/dt 5.2V/nsOperating Junction and-55 to + 175
TSTGStorage Temperature Range
Soldering Temperature, for 10 seconds300 (1.6mm from case )
Absolute Maximum Ratings

Notesthrough  are on page 10

Applications
High frequency DC-DC convertersLead-Free
Benefits
Low Gate-to-Drain Charge to Reduce
Switching LossesFully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)Fully Characterized Avalanche Voltage
and Current
D-Pak
IRFR3518
I-Pak
IRFU3518
ParameterTyp.Max.Units

RθJCJunction-to-Case–––1.4
RθJAJunction-to-Ambient (PCB mount)–––40°C/W
RθJAJunction-to-Ambient–––110
Thermal Resistance
 
Dynamic @ TJ = 25°C (unless otherwise specified)
Static @ TJ = 25°C (unless otherwise specified)
ParameterMin.Typ.Max.Units
Conditions
V(BR)DSSDrain-to-Source Breakdown Voltage80––––––VVGS = 0V, ID = 250μA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.09 ––– V/°C Reference to 25°C, ID = 1mA 
RDS(on)Static Drain-to-Source On-Resistance–––2429mΩVGS = 10V, ID = 18A
VGS(th)Gate Threshold Voltage2.0–––4.0VVDS = VGS, ID = 250μA
––––––20μAVDS = 80V, VGS = 0V
–––––– 250VDS = 64V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage––––––200VGS = 20V
Gate-to-Source Reverse Leakage––––––-200nAVGS = -20VIGSS
IDSSDrain-to-Source Leakage Current
ParameterMin.Typ.Max.Units
Conditions
gfsForward Transconductance34––––––SVDS = 25V, ID = 18ATotal Gate Charge––– 37 56 ID = 18A
QgsGate-to-Source Charge–––11–––nCVDS = 40V
QgdGate-to-Drain ("Miller") Charge–––12–––VGS = 10V 
td(on)Turn-On Delay Time–––12–––VDD = 40VRise Time–––25–––ID = 18A
td(off)Turn-Off Delay Time–––37–––RG = 9.1ΩFall Time–––13–––VGS = 10V
CissInput Capacitance–––1710–––VGS = 0V
CossOutput Capacitance–––270–––VDS = 25V
CrssReverse Transfer Capacitance–––33–––pFƒ = 1.0MHz
CossOutput Capacitance–––1780–––VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
CossOutput Capacitance–––170–––VGS = 0V, VDS = 64V, ƒ = 1.0MHz
Coss eff.Effective Output Capacitance–––330–––VGS = 0V, VDS = 0V to 64V 
ParameterTyp.Max.Units

EASSingle Pulse Avalanche Energy–––160mJ
IARAvalanche Current–––18A
EARRepetitive Avalanche Energy–––11mJ
Avalanche Characteristics

ParameterMin.Typ.Max.Units
ConditionsContinuous Source CurrentMOSFET symbol
(Body Diode)––––––showing the
ISMPulsed Source Currentintegral reverse
(Body Diode) ––––––p-n junction diode.
VSDDiode Forward Voltage––––––1.3VTJ = 25°C, IS = 18A, VGS = 0V
trrReverse Recovery Time–––77–––nsTJ = 25°C, IF = 18A
QrrReverse RecoveryCharge–––210–––nCdi/dt = 100A/μs
tonForward Turn-On TimeIntrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Diode Characteristics

150
3
 
Fig 4. Normalized On-Resistance

Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics

10
100
1000
0.1 1 10 100
20μs PULSE WIDTH
T = 25CJ°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , D
-to
rre
t (
4.5V
10
100
1000
0.1 1 10 100
20μs PULSE WIDTH
T = 175CJ°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , D
-to
rre
t (
4.5V
4.06.08.010.012.014.016.0GS, Gate-to-Source Voltage (V)
, DJ = 25°CJ = 175°CDS = 25V
20μs PULSE WIDTH
, D
rce
sta
ed)
(on)==
10V
38A
 °
 
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode

Forward Voltage
10
100
1000
V ,Source-to-Drain Voltage (V)
I ,
e D
rai
n C
rrent
(A)
V = 0 V GS
T = 175 CJ°
T = 25 CJ°101001000
VDS, Drain-to-Source Voltage (V)
, D
t (
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec10100DS, Drain-to-Source Voltage (V)
ita
VGS = 0V, f = 1 MHZiss = Cgs + Cgd, Cds SHORTEDrss = Cgd oss = Cds + Cgdossrssiss10203040G Total Gate Charge (nC)
, GVDS= 40VDS= 64VDS= 16VD= 18A
5
 
Fig 10a. Switching Time Test Circuit

VDS
90%
10%
VGS
td(on)trtd(off)tf
Fig 10b. Switching Time Waveforms


 ≤ 1 
  ≤ 0.1 %



-
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.

Case Temperature
10
0.000010.00010.0010.010.1 1
Notes:
1. Duty factor D =t / t
2. Peak T=Px Z+ T2DMthJCC
t , Rectangular Pulse Duration (sec)
her
mal
Res
pons
)
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)5075100125150175
T , Case Temperature( C)
I ,
rai
n C
rentC
LIMITED BY PACKAGE
 GSQGD
Charge
D.U.T.VDSIG
3mA
VGS
.3µF
50KΩ
.2µF12V
CurrentRegulator
SameTypeasD.U.T.
CurrentSamplingResistors
Fig 13b. Gate Charge Test CircuitFig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy

Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit

V(BR)DSS
IAS
IAS
0.01Ωtp
D.U.TVDSVDD
DRIVER
15V
20V5075100125150175
Starting Tj, Junction Temperature( C)
, S
ingl
e P
e A
anc
he E
nerD
TOP
BOTTOM
7.3A
13A
18A
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