IRFR3704TRLPBF ,20V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsHEXFET Power MOSFET High Frequency DC-DC IsolatedV R max IDSS DS(on) D Converters ..
IRFR3704Z ,20V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsHEXFET Power MOSFET High Frequency Synchronous BuckV R maxQgDSS DS(on) Converters ..
IRFR3704ZPBF , High Frequency Synchronous Buck Converters for Computer Processor Power
IRFR3704ZTR ,Leaded 20V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsHEXFET Power MOSFET High Frequency Synchronous BuckV R maxQgDSS DS(on) Converters ..
IRFR3706 ,20V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsV R max IDSS DS(on) D High Frequency Isolated DC-DC 20V 9.0mΩ 75A Converters with ..
IRFR3706CTRPBF ,20V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsHEXFET Power MOSFET High Frequency Isolated DC-DC Converters with Synchronous Rect ..
ISL83490IB ,3.3V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications not requiring Rx and Tx • RS-232 “Extension Cords”output disable functions (e.g., poin ..
ISL83490IP ,3.3V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversFeaturesRate Limited, RS-485/RS-422 Transceivers• Operate from a Single +3.3V Supply (10% Tolerance ..
ISL83491IB ,3.3V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversFeaturesRate Limited, RS-485/RS-422 Transceivers• Operate from a Single +3.3V Supply (10% Tolerance ..
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ISL8391IB ,Low-Voltage/ Single and Dual Supply/ Quad SPST/ Analog SwitchesElectrical Specifications: ±5V Supply Test Conditions: V = ±4.5V to ±5.5V, GND = 0V, V = 2.4V, V = ..
ISL8392IB ,Low-Voltage/ Single and Dual Supply/ Quad SPST/ Analog SwitchesFEATURES AT A GLANCE - Laptops, Notebooks, PalmtopsISL8391 ISL8392 ISL8393• Communications Systems- ..
IRFR3704TRLPBF
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
TOR Rectifier
Applications
SMPS MOSFET
PD - 95034A
IRFR3704PbF
IRFU3704PbF
HEXFET© Power MOSFET
o High Frequency DC-DC Isolated Voss RDS max ID
Converters with Synchronous Rectification (on)
for Telecom and Industrial use 20V 9.5mQ 75A
. High Frequency Buck Converters for
Computer Processor Power
. 100% Rs Tested
0 Lead-Free
Benefits sgib
o Ultra-Low RDS(on) Rift" l 'Riit
q Very Low Gate Impedance l f
o Fully Characterized Avalanche Voltage
and Current D-Pak l-Pak
IRFR3704 IRFU3704
Absolute Maximum Ratings
Symbol Parameter Max Units
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage l 20
ID @ TC = 25°C Continuous Drain Current, I/ss @ 10V 75 (D
ID @ TC = 70°C Continuous Drain Current, VGS @ 10V 63 (D A
'DM Pulsed Drain Current C) 300
Po @TC = 25°C Maximum Power Dissipation © 90
PD @TA = 70°C Maximum Power Dissipation © 62 W
Linear Derating Factor 0.58 W/°C
T J, TSTG Junction and Storage Temperature Range -55 to +175 ''C
Thermal Resistance
Symbol Parameter Typ Max Units
ROJC Junction-to-Case © - 1.7
ROJA Junction-to-Ambient (PCB Mount) *© - 50 °C/W
Ram Junction-to-Ambient © _ 110
* When mounted on 1" square PCB (FR-4 or G-IO Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Notes co through s are on page 9
1
12/13/04
IRFR/U3704PbF
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min Typ Max Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V VGS = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. CoefMient - 0.021 - V/°C Reference to 25°C, ID = 1mA
Rosmn) Static Drain-to-Source On-Resistance - 7.3 9.5 mn VGS = 10V, ID = 15A ©
11 14 VGs=4.5V,lo=12A©
VGS(th) Gate Threshold Voltage 1.0 -- 3.0 V Ws = VGS, ID = 250pA
IDSS Drain-to-Source Leakage Current - - 10 PA Ws = 20V, VGS = 0V
- - 100 Ws = 16V, VGS = 0V, T, = 125°C
I Gate-to-Source Forward Leakage - - 200 VGS = 16V
GSS Gate-to-Source Reverse Leakage - - -200 nA Vas = -16V
Dynamic tt T J = 25°C (unless otherwise specified)
Symbol Parameter Min Typ Max Units Conditions
gs Forward Transconductance 42 - - S Ws = 25V, ID = 57A
Qg Total Gate Charge - 19 - b = 28.4A
Qgs Gate-to-Source Charge - 8.1 - nC Vos = ION/
di Gate-to-Drain ("Miller") Charge - 6.4 - VGS = 4.5V ©
Qoss Output Gate Charge 16 24 V68 = ov, VDs = 10V
Re Gate Resistance 0.3 - 3.2 Q
tam") Turn-On Delay Time - 8.4 - VDD = 10V
t, Rise Time - 98 - ID = 28.4A
trom Turn-Off Delay Time - 12 - ns Rs = 1.89
h Fall Time - 5.0 - VGS = 4.5V ©
Ciss Input Capacitance - 1996 -- VGS = ov
Cass Output Capacitance - 1085 - pF Vos = 10V
Crss Reverse Transfer Capacitance - 155 - f = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ Max Units
EAS Single Pulse Avalanche Energy© _ 216 mJ
IAR Avalanche Current co _ 71 A
Diode Characteristics
Symbol Parameter Min Typ Max Units Conditions
ls Continuous Source Current - - 75 co MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - _ 300 integral reverse a
(Body Diode) C) p-njunction diode. a
VSD Diode Forward Voltage - 0.88 1.3 v T J = 25°C, IS = 35.5A, Vss = OV ©
- 0.82 - TJ =125°C,|S = 35.5A, VGS = OV ©
trr Reverse Recovery Time - 38 57 ns TJ = 25°C, IF = 35.5A, VR = 20V
G, Reverse Recovery Charge -- 45 68 nC di/dt = 100A/ps ©
trr Reverse Recovery Time - 41 62 ns Tu = 125°C, IF = 35.5A, VR-- 20V
Q,, Reverse Recovery Charge - 50 75 no di/dt = 100A/ps ©
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