IC Phoenix
 
Home ›  II32 > IRFR3707TRPBF,30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
IRFR3707TRPBF Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
IRFR3707TRPBFIORN/a320avai30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
IRFR3707TRPBFIRN/a392avai30V Single N-Channel HEXFET Power MOSFET in a D-Pak package


IRFR3707TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak package SMPS MOSFET 
IRFR3707TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsHEXFET Power MOSFET High Frequency DC-DC IsolatedV R max IDSS DS(on) D Converters ..
IRFR3707Z ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageIRFR3707ZIRFU3707Z
IRFR3707Z. ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsHEXFET Power MOSFET High Frequency Synchronous BuckV R maxQgDSS DS(on) Converters ..
IRFR3707ZC ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplications High Frequency Synchronous Buck HEXFET Power MOSFET Converters for Computer Proc ..
IRFR3707ZCTRPBF ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplications High Frequency Synchronous Buck HEXFET Power MOSFET Converters for Computer Proc ..
ISL84052IA ,Low-Voltage/ Single and Dual Supply/ 8 to 1 Multiplexer/ Dual 4 to 1 Multiplexer and a Triple SPDT Analog SwitchesISL84051, ISL84052, ISL84053®Data Sheet November 2003 FN6047.3Low-Voltage, Single and Dual Supply, ..
ISL84052IB ,Low-Voltage/ Single and Dual Supply/ 8 to 1 Multiplexer/ Dual 4 to 1 Multiplexer and a Triple SPDT Analog SwitchesISL84051, ISL84052, ISL84053®Data Sheet November 2003 FN6047.3Low-Voltage, Single and Dual Supply, ..
ISL84053IA ,Low-Voltage/ Single and Dual Supply/ 8 to 1 Multiplexer/ Dual 4 to 1 Multiplexer and a Triple SPDT Analog SwitchesApplicationsTable 1 summarizes the performance of this family.• Portable EquipmentTABLE 1.
ISL84053IAZ-T , Low Voltage, Single and Dual Supply, 8-to-1 Multiplexer, Dual 4-to-1 Multiplexer and a Triple SPDT Analog Switch
ISL84053IB ,Low-Voltage/ Single and Dual Supply/ 8 to 1 Multiplexer/ Dual 4 to 1 Multiplexer and a Triple SPDT Analog SwitchesApplicationsTable 1 summarizes the performance of this family.• Portable EquipmentTABLE 1.
ISL84514IB ,Low-Voltage/ Single Supply/ SPST/ Analog Switchesapplications include battery powered equipment that benefit from the devices’ low power • Single Su ..


IRFR3707TRPBF
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 95019A
International
. . IRFR3707PbF
TOR liUctifier SMPS MOSFET IRFRU3707PbF
Applications HEXFET© Power MOSFET
q High Frequency DC-DC Isolated V R I
Converters with Synchronous Rectification DSS DS(on) max D
for Telecom and Industrial use 30V 13mQ 61A@
0 High Frequency Buck Converters for
Computer Processor Power
o Lead-Free
Benefits
0 Ultra-Low RDS(on) tii,)))), 1fiiiy
o Very Low Gatelmpedance l s, .
0 Fully Characterized Avalanche Voltage
and Current
D-Pak l-Pak
IRFR3707 IRFU3707
Absolute Maximum Ratings
Symbol Parameter Max. Units
I/rss Drain-Source Voltage 30 V
VGS Gate-to-Source Voltage 1 20 V
In @ Tc = 25°C Continuous Drain Current, VGS @ 10V 61 (D
ID @ To = 70''C Continuous Drain Current, VGS @ 10V 51 (D A
IDM Pulsed Drain CurrentG) 244
PD @Tc = 25°C Maximum Power Dissipation© 87 W
Pro @Tc = 70°C Maximum Power Dissipation@ 61 W
Linear Derating Factor 0.59 mW/°C
T J , TSTG Junction and Storage Temperature Range -55 to + 175 ''C
Thermal Resistance
Parameter Typ. Max. Units
RQJC Junction-to-Case - 1 .73
RQJA Junction-to-Ambient (PCB mount)* - 50 °CNV
ReJA Junction-to-Ambient - 1 10
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Notes © through © are on page 9
1
12/13/04

IRFR/U3707PbF
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.027 - 1//c'C Reference to 25°C, ID = 1mA
R St ti D . t S O R ist - 9.7 13 Q VGs=10V,lD=15A ©
DS(on) a IC ram- o- ource n- eSIS ance - 13.2 17.5 m VGs = 4.5V, ID = 12A ©
VGS(th) Gate Threshold Voltage 1.0 - 3.0 V Vos = VGS, ID = 250pA
. - - 20 Vos = 24V, VGS = ov
I Drain-to-Source Leaka e Current A
DSS g - - 100 u N/ns = 24V, veg = 0v, T: = 125°C
less Gate-to-Source Forward Leakage - - 200 n A VGS = 16V
Gate-to-Source Reverse Leakage - - -200 VGs = -16V
Dynamic @ Tu = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
Ts Forward Transconductance 37 - - S Vos = 15V, ID = 49.6A
Qg Total Gate Charge - 19 - lo = 24.8A
Qgs Gate-to-Source Charge - 8.2 - nC N/rss = 15V
qu Gate-to-Drain ("Miller") Charge - 6.3 - I/ss = 4.5V ©
Qoss Output Gate Charge - 18 27 V63 = 0V, Vros = 15V
tdmn) Turn-On Delay Time - 8.5 - VDD = 15V
tr Rise Time - 78 - ns ID = 24.8A
td(off) Turn-Off Delay Time - 11.8 - Rs = 1.89
tf Fall Time - 3.3 - N/ss = 4.5V ©
Ciss Input Capacitance - 1990 - VGs = 0V
Cass Output Capacitance - 707 - Vos = 15V
Crss Reverse Transfer Capacitance - 50 - pF f = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 213 m]
IAR Avalanche CurrentCD - 61 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - 61@ A showing the
ISM Pulsed Source Current 244 integral reverse G
(Body Diode) (D - - p-n junction diode. s
Vso Diode Forward Voltage - 0.88 1.3 V Tu = 25°C, Is = 31A, Vss = 0V 6)
- 0.8 - TI, =125°C,|s = 31A, VGs = 0V ©
trr Reverse Recovery Time - 39 59 ns TJ = 25°C, IF = 31A, VR=20V
Qrr Reverse Recovery Charge - 49 74 n0 di/dt = 100A/ps ©
trr Reverse Recovery Time - 42 63 ns TJ = 125°C, IF = 31A, VR=20V
Gr Reverse Recovery Charge - 62 93 nC di/dt = 100/Ups ©
2

ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED