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IRFR4104-IRFU4104
40V Single N-Channel HEXFET Power MOSFET in a D-Pak package
. PD - 94728
International IRFR4104
.2 R ifi AUTOMOTIVE MOSFET
TOR ech Ier IRFU4104
HEXFET© Power MOSFET
Features D
. Advanced Process Technology VDSS = 40V
. Ultra Low On-Resistance
o 175°C Operating Temperature
o Fast Switching G ' A RDS(0n) = 5.5mQ
o Repetitive Avalanche Allowed up to Tjmax
s ID = 42A
Description
Specifically designed for Automotive applications, this HEXFET©
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficientand reliable device for usein Automotive applications and D-Pak l-Pak
a wide variety of other applications. IRFR4104 IRFU4104
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vss @ 10V (Silicon Limited) 119
ID @ To = 100°C Continuous Drain Current, VGS @ 10V 84 A
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 42
IDM Pulsed Dram Current (D 480
PD @TC = 25°C Power Dissipation 140 W
Linear Derating Factor 0.95 W/°C
VGS Gate-to-Source Voltage * 20 V
EAS (Thermallylimited) Single Pulse Avalanche Energy© 145 m J
EAS (Tested ) Single Pulse Avalanche Energy Tested Value © 310
IAR Avalanche Current LO See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy Q) m J
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbf'in (1.1N'm)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 1 .05
ROJA Junction-to-Amblent (PCB mount) © - 40 'C/W
ROJA Junction-to-Ambient - 1 10
HEXFET© is a registered trademark of International Rectifier.
1
7/17/03
|RFR/U4104
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.032 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 4.3 5.5 mi2 VGS = 10V, b = 42A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, ID = 250PA
gts Forward Transconductance 58 - - S Vros = 10V, ID = 42A
loss Drain-to-Source Leakage Current - - 20 pA Vos = 40V, Vss = 0V
- - 250 Vos = 40V, VGS = 0V, T: = 125°C
less Gate-to-Source Forward Leakage - - 200 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -200 VGS = -20V
09 Total Gate Charge - 59 89 ID = 42A
As Gate-to-Source Charge - 19 - nC Vos = 32V
di Gate-to-Drain ("Miller") Charge - 24 - VGS = 10V ©
tam") Turn-On Delay Time - 17 - VDD = 20V
t, Rise Time - 69 - ID = 42A
td(off) Turn-Off Delay Time - 37 - ns Rs = 6.8 Q
tr Fall Time - 36 - VGS = 10V ©
LD Internal Drain Inductance - 4.5 - Between lead,
nH 6mm (0.25in.)
Ls Internal Source Inductance - 7.5 - from package
and center of die contact
Ciss Input Capacitance - 2950 - VGS = 0V
Coss Output Capacitance - 660 - Vos = 25V
Crss Reverse Transfer Capacitance - 370 - pF f = 1.0MHz
Coss Output Capacitance - 2130 - VGS = 0V, Ws = 1.0V, f = 1.0MHz
Coss Output Capacitance - 590 - N/ss = 0V, Ws = 32V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 850 - VGS = 0V, Vos = 0V to 32V co
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 42 MOSFET symbol
(Body Diode) A showing the _‘ . A
ISM Pulsed Source Current - - 480 integral reverse - . _
(Body Diode) C) p-n junction diode. .
VSD Diode Forward Voltage - - 1.3 V T: = 25°C, Is = 42A, VGS = 0V ©
tn Reverse Recovery Time - 28 42 ns TJ = 25°C, IF = 42A, VDD = 20V
Qrr Reverse Recovery Charge - 24 36 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
