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IRFR4105Z
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 94752
International IRFR4105Z
" . . AUTOMOTIVE MOSFET
TOR Rectifier IRFU4105Z
HEXFET© Power MOSFET
Features D
. Advanced Process Technology VDSS = 55V
. Ultra Low On-Resistance
o 175°C Operating Temperature
. Fast Switching G ' A RDS(on) - 24.5mQ
o Repetitive Avalanche Allowed up to Tjmax
l = 30A
Description
Specifically designed for Automotive applications, this HEXFETO
Power MOSFET utilizes the latest processing techniques to 1;;iii)),
achieve extremely low on-resistance per silicon area. Additional ''iiii's'"'1 G"
features of this design are a 175°C junction operating tempera- l, r
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficientand reliable device for usein Automotive applications and D-Pak l-Pak
a wide variety of other applications. IRFR41052 IRFU41052
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 30
ID @ To = 100°C Continuous Drain Current, I/ss @ 10V 21 A
Iron, Pulsed Drain Current LO 120
PD @Tc = 25°C Power Dissipation 48 W
Linear Derating Factor 0.32 W/°C
VGs Gate-to-Source Voltage f: 20 V
EAs(Thermawvmited) Single Pulse Avalanche Energy© 29 m J
EAS (Tested ) Single Pulse Avalanche Energy Tested Value © 46
IAR Avalanche Current © See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy s m J
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1N'm)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 3.12
ROJA Junction-to-Ambient (PCB mount) © _ 40 ''C/W
ROJA Junction-to-Ambient - 1 10
HEXFET© is a registered trademark of International Rectifier.
1
8/25/03
IRFR/U4105Z
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.053 - V/°C Reference to 25°C, lo = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 19 24.5 mg VGs = 10V, b = 18A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, ID = 250PA
gts Forward Transconductance 16 - - S Vros = 15V, ID = 18A
loss Drain-to-Source Leakage Current - - 20 pA Vros = 55V, N/ss = 0V
- - 250 Vos = 55V, VGS = 0V, T: = 125°C
less Gate-to-Source Forward Leakage - - 200 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -200 VGS = -20V
q, Total Gate Charge - 18 27 ID = 18A
Qgs Gate-to-Source Charge - 5.3 - nC Vos = 44V
qu Gate-to-Drain ("Miller") Charge - 7.0 - VGS = 10V ©
td(on) Turn-On Delay Time - 1O - VDD = 28V
t, Rise Time - 40 - ID = 18A
tam) Turn-Off Delay Time - 26 - ns Rs = 24.5 Q
tr Fall Time - 24 - VGS = 10V ©
Lo Internal Drain Inductance - 4.5 - Between lead, D
nH 6mm (0.25in.) ir-, )
Ls Internal Source Inductance - 7.5 - from package Gk]
and center of die contact s
Ciss Input Capacitance - 740 - VGS = 0V
Coss Output Capacitance - 140 - Vos = 25V
Crss Reverse Transfer Capacitance - 74 - pF f = 1.0MHz
Cass Output Capacitance - 450 - VGS = 0V, Vros = 1.0V, f = 1.0MHz
Cass Output Capacitance - 110 - Vss = 0V, 1/ros = 44V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 180 - VGS = 0V, Vos = 0V to 44V ©
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
Is Continuous Source Current - - 30 MOSFET symbol CC-' D
(Body Diode) A showing the K
ISM Pulsed Source Current - - 120 integral reverse (5 IL'.
(Body Diode) (D p-n junction diode. cl
VSD Diode Forward Voltage - - 1.3 V To = 25°C, Is = 18A, VGS = 0V ©
trr Reverse Recovery Time - 19 29 ns To = 25°C, IF = 18A, VDD = 28V
er Reverse Recovery Charge - 14 21 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
