IRFR48ZTRPBF ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.IRFR48ZPbF IRFU48ZPbFAbsolute Maximum RatingsParameter Max. UnitsContinuous Drain Curr ..
IRFR5305 ,-55V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications.The D-Pak is designed for surface mounting using vaporphase, infrared, or wave solderi ..
IRFR5305TR ,-55V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFR5305TRPBF ,-55V Single P-Channel HEXFET Power MOSFET in a D-Pak packagePD-95025AIRFR5305PbFIRFU5305PbF®HEXFET Power MOSFET Ultra Low On-ResistanceSurface Mount (IRFR53 ..
IRFR5305TRRPBF ,-55V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25C Continuous Drain Current, V @ ..
IRFR540Z ,100V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.D-Pak I-PakIRFR540ZPbF IRFU540ZPbFAbsolute Maximum RatingsParameter Max. UnitsContinuo ..
ISL8487EIP ,15kV ESD Protected/ 1/8 Unit Load/ 5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversFeaturesLow Power, High Speed or Slew Rate • RS-485 I/O Pin ESD Protection . . . . . . . . . . . . ..
ISL8487IB ,1/8 Unit Load/ 5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversFeaturesor Slew Rate Limited, RS-485/RS-422 • Fractional Unit Load Allows up to 256 Devices on the ..
ISL8487IP ,1/8 Unit Load/ 5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversfeatures higher slew rates.• Automated Utility Meter Reading SystemsReceiver (Rx) inputs feature a ..
ISL8488IB ,5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversISL8483, ISL8485, ISL8488,®ISL8489, ISL8490, ISL8491Data Sheet December 2003 FN6046.35V, Low Power, ..
ISL8488IB ,5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications. • Low Quiescent Current:-160µA (ISL8483, ISL8488, ISL8489)Data rates up to 5Mbps are ..
ISL8488IP ,5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications. • Low Quiescent Current:-160µA (ISL8483, ISL8488, ISL8489)Data rates up to 5Mbps are ..
IRFR48ZTRPBF
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 95950A
International
ziaRliUctifier lF1FlR48ZPbF
llRFU48ZPbF
Features
Advanced Process Technology H EXFET© Power MOSFET
Ultra Low On-Resistance
175°C OperatingTemperature D
Fast Switching VDSS = 55V
Repetitive Avalanche Allowed up to Tjmax
ea ree G RDS(on) = 11mQ
Description ID = 42A
This HEXFETO Power MOSFET utilizesthe latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating ttii),
temperature, fast switching speed and improved s1iiiii)it Ri'-' V
repetitiveavalancherating.Thesefeaturescombine l
to make this design an extremely efficient and
reliable device for use in a wide variety of
. . D-Pak l-Pak
applications. IRFR48ZPbF IRFU48ZPbF
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Vas © 10V (Silicon Limited) 62
ID @ To = 100°C Continuous Drain Current, Vas @ 10V 44 A
ID © To = 25°C Continuous Drain Current, Vas @ 10V (Package Limited) 42
'DM Pulsed Drain Current OD 250
PD (itTc = 25°C Power Dissipation 91 W
Linear Derating Factor 0.61 W/°C
VGS Gate-to-Source Voltage t 20 V
EAS(Therma|Iylimi(ed) Single Pulse Avalanche Energy© 74 mJ
EAS (Tested) Single Pulse Avalanche Energy Tested Value © 110
IAR Avalanche Current CD See Fig.12a,12b,15,16 A
EAR Repetitive Avalanche Energy O) md
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case © - 1.64
ReJA Junction-to-Ambient (PCB mount) ©© - 40 °C/W
ReJA Junction-to-Ambient © - 110
HEXFET® is a registered trademark of International Rectifier.
1
09/27/10
IRFR/U48ZPbF
International
TOR Rectifier
Electrical Characteristics © T,, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bnpss Drain-to-Source Breakdown Voltage 55 - - V Vss = 0V, ID = 250pA
AmeDss/ATJ Breakdown Voltage Temp. Coefficient - 0.054 - V/°C Reference to 25°C, ID = 1mA
RDSM) Static Drain-to-Source On-Resistance - 8.86 11 mn Vas = 10V, ID = 37A ©
Vegan) Gate Threshold Voltage 2.0 - 4.0 V Vrrs = Vss, ID = 50PA
gfs Forward Transconductance 120 -- -- S Vos = 25V, ID = 37A
loss Drain-to-Source Leakage Current - - 20 pA Vos = 55V, l/as = 0V
- - 250 Vrrs = 55V, Vss = OV, T J =125°C
less Gate-to-Source Forward Leakage - --- 200 nA Ves = 20V
Gate-to-Source Reverse Leakage - - -200 Vas = -20V
Qg Total Gate Charge - 40 60 ID = 37A
095 Gate-to-Source Charge -- 11 -- nC Vos = 44V
di Gate-to-Drain ("Miller") Charge - 15 - Ves = 10V OD
td(on) Turn-On Delay Time _ 15 - VDD = 28V
t, Rise Time -- 61 -- ID = 37A
td(off) Turn-Off Delay Time - 40 - ns Rs = 12 Q
t, Fall Time - 35 - Vas = 10V ©
LD Internal Drain Inductance -- 4.5 -- Between lead,
nH 6mm (0.25in.)
Ls Internal Source Inductance - 7.5 - from package
and center of die contact
Ciss Input Capacitance - 1720 - Ves = 0V
Coss Output Capacitance - 290 - Vos = 25V
Crss Reverse Transfer Capacitance -- 160 -- pF f = 1.0MHz
Coss Output Capacitance - 1000 - Ves = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 230 - Vas = 0V, Vros = 44V, f = 1.0MHz
Coss eff. Effective Output Capacitance -- 360 -- Vas = 0V, Vos = 0V to 44V ©
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
Is Continuous Source Current -- -- 37 MOSFET symbol D
(Body Diode) A showing the C,--,-,
ISM Pulsed Source Current - - 250 integral reverse G ld,
(Body Diode) CD p-n junction diode. a
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 37A, VGS = 0V OD
trr Reverse Recovery Time - 20 40 ns TJ = 25°C, IF = 37A, VDD = 28V
Qrr Reverse Recovery Charge -- 14 28 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
