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IRFR5305TRPBF-IRFR5305TRRPBF
-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package
PD-95025A
International
. . |RFR5305PbF
TOR Rectifier IRFU5305PbF
o Ultra LowOn-Resistance HEXFET© Power MOSFET
0 Surface Mount(|RFR5305) D
o StraightLead (IRFU5305) VDSS = -55V
o Advanced Process Technology
o FastSwitching : v RDS(on) = 0.0659
0 Fully Avalanche Rated G
o Lead-Free ID = -31A
Description
Fifth Generation HEXFETs from International Rectiher utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET© Power MOSFETs are well known for, provides
the designer with an extremely ethcient and reliable device 'Rttti's"'' t
for use in a wide variety of applications. " l , "
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting D-Pak I-Pak
applications. Power dissipation levels up to 1.5 watts are IRFR5305 IRFU5305
possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, I/ss @ -10V -31
ID @ Tc = 100°C Continuous Drain Current, VGS @ -10V -22 A
IDM Pulsed Drain Current $6) -110
Po @Tc = 25°C Power Dissipation 110 W
LinearDerating Factor 0.71 W/°C
I/ss Gate-to-Source Voltage * 20 V
EAS Single Pulse Avalanche Energy©© 280 mJ
IAR Avalanche Current0M0 -16 A
EAR Repetitive Avalanche Energy© 11 m]
dv/dt Peak Diode Recovery dv/dt ©© -5.0 V/ns
To Operating Junction and -55 to + 175
TSTG StorageTemperature Range 'C
Soldering Temperature, for 10 seconds 300 (1 .6mm from case)
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Ruc Junction-to-Case - 1 .4
ReJA Junction-to-Ambient (PCB mount)* - 50 'CM/
ReJA Junction-to-Ambient" - 110
1
12/13/04
IRFR/U5305PbF International
TOR Rectifier
Electrical Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source BreakdownVoltage -55 - - V VGs = 0V, ID = -250pA
AV
RDS(on) StaticDrain-to-SourceOn-Resistance - - 0.065 Q VGS = -10V, ID = -16A co
VGs(th) Gate Threshold Voltage -2.0 - -4.0 V Ws = VGs, ID = -250pA
gig Forward Transconductance 8.0 - - S Vros = -25V, ID = -16A©
loss Drain-to-Source Leakage Current - - -25 pA VDS = -55V, VGS = 0V
- - -250 VDs = -44V, VGs = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 nA VGs = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% TotalGate Charge - - 63 lo = -16A
095 Gate-to-Source Charge - - 13 nC Vros = -44V
di Gate-to-Drain("Miller")Charge - - 29 VGS = -10V, See Fig. 6 and 13 (0(6)
tdwn) Turn-On Delay Time - 14 - VDD = -28V
tr Rise Time - 66 - ID = -16A
tdwm Turn-Off Delay Time - 39 - ns Rs = 6.89
tf Fall Time - 63 - Ro = 1.69, See Fig. 10 C9©
LD Internal Drain Inductance - 4.5 - Between trf D
nH 6mm (0.25in.) E )
from package G
Ls IntemalSourCelnductance - 7.5 - and centerofdie contact © s
Ciss InputCapacitance - 1200 - VGS = 0V
Coss OutputCapacitance - 520 - pF Vos = -25V
Crss ReverseTransferCapacitance - 250 - f = 1.0MHz, See Fig. 5 ©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max Units Conditions
Is Continuous Source Current - - -31 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - -1 10 integral reverse G
(Body Diode) OD p-njunction diode. s
VSD Diode ForwardVoltage - - -1.3 V T: = 25°C, Is = -16A, N/ss = 0V (0
trr Reverse RecoveryTime - 71 110 ns T: = 25°C, IF = -16A
Qrr Reverse RecoveryCharge - 170 250 nC di/dt = -100A/ps (9 ©
Notes:
co Repetitive rating; pulse width limited by
© Pulse width S 300ps; duty cycle S 2%.
max. junction temperature. (See Fig. 11)
© VDD = -25V, starting T, = 25''C, L = 2.1mH
RG = 259, IAS = -16A. (See Figure 12)
© ISD I -16A, di/dt s -280A/ps, VDD s V(BR)DSS,
T J 3 175°C
*When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques referto application note #AN-994.
** Uses typical socket mount.
s This is applied for I-PAK, Ls of D-PAK is measured between
lead and center of die contact.
© Uses IRF5305 data and test conditions.
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