IRFR5505TRRPBF ,-55V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Powert
possible in typical SUIAbsolute Maximum Ratings
Parameter Max. Units
ID ..
IRFR6215 ,-150V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFR6215PBF ,-150V Single P-Channel HEXFET Power MOSFET in a D-Pak packagePD - 91749IRFR/U6215PRELIMINARY®HEXFET Power MOSFETl P-ChannelDl 175°C Operating TemperatureV = -15 ..
IRFR6215TR ,-150V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications. D-PAK I-PAKThe D-PAK is designed for surface mounting usingTO-252AA TO-251AAvapor ..
IRFR6215TRLPBF ,-150V Single P-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFR6215TRPBF , 175°C Operating Temperature
ISL8490IP ,5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications not requiring Rx and Tx output disable functions (e.g., point-to-point). Half duplex c ..
ISL8491EIB ,+-15kV ESD protected, 5V, low power, high speed and slew rate limited, full duplex, RS-485/RS-422 transceiver.applications, so they are ideal for -250µA (ISL8491E)RS-422 networks requiring high ESD tolerance o ..
ISL8491EIBZ ,+-15kV ESD protected, 5V, low power, high speed and slew rate limited, full duplex, RS-485/RS-422 transceiver.FeaturesHigh Speed and Slew Rate Limited, Full • RS-485 I/O Pin ESD Protection . . . . . . . . . . ..
ISL8491IB ,5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 TransceiversApplicationsThe ISL8488 - 91 are configured for full duplex (separate Rx input and Tx output pins)
ISL8491IP ,5V/ Low Power/ High Speed or Slew Rate Limited/ RS-485/RS-422 Transceiversapplications not requiring Rx and Tx output disable functions (e.g., point-to-point). Half duplex c ..
ISL8499IRZ-T ,Ultra Low ON-Resistance, +1.65V to +4.5V, Single Supply, Quad SPDT (Dual DPDT) Analog SwitchElectrical Specifications - 4.3V Supply Test Conditions: V+ = +3.9V to +4.5V, GND = 0V, V = 1.6V, V ..
IRFR5505TRRPBF
-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package
International
TOR Rectifier
Ultra Low On-Resistance
P-Channel
PD - 95077B
IRFR5505PbF
|RFU5505PbF
Surface Mount (|RFR5505)
Straight Lead (|RFU5505)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free
Halogen-Free
D VDSS = -55V
RDS(on) = 0.119
ID = -18A
Description
Fifth Generation HEXFEFs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFEI's are well
known for, providesthe designerwith an extremely efficient
and reliable device for use in a wide variety of applications.
D-Pak i-Pak
The [D-Pak is designed for surface mounting using vapor TC-252AA TC)-25IAA
phase, infrared, orwave solderingtechniques. The straight
lead version (IRFLJ series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter Max. Units
ID tt TC = 25°C Continuous Drain Current, Veg tp -10V -18
ID @ Tc =100°C Continuous Drain Current, Veg tp -10V -11 A
IDM Pulsed Drain Current (I) -64
PD @Tc = 25''C Power Dissipation 57 W
Linear Derating Factor 0.45 wrc
I/ss Gate-tty-Source Voltage , 20 V
EAS Single Pulse Avalanche Energy0) 150 md
IAR Avalanche Current0) -9.6 A
EAR Repetitive Avalanche Energy0) 5.7 md
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
Tu Operating Junction and -55 to + 150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1 .6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rm Junction-to-Case - 2.2
RQJA Junction-to-Ambient (PCB mount)" - 50 ''C/W
ReJA Junction-to-Ambient - 110
fl © 2012 International Rectifier
November12th , 2012
|RFR/U5505PbF
International
TOR Rectifier
Electrical Characteristics @ Tu = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Vresvss Drain-to-Source Breakdown Voltage -55 - - V Vss = ov, ID = -250pA
AV(BR)DsE/ATJ Breakdown Voltage Temp. CoetMient - -0.049 - I/fC Reference to 25"C, ID = -1mA
RDs(on) Static Drain-tty-Source On-Resistance - - 0.11 n I/ss = -10V. ID = -9.6A 3)
VGS(th) Gate Threshold Voltage -2.0 - -4.0 V Ws = Veg. ID = -250pA
gtt Forward Transconductance 4.2 - - S Ws = -25V, ID = -9.6A
bss Drain-to-Source Leakage Current - - -25 HA Ws = -55V, Vas = 0V
- - -250 Ws = -44V, Veg = OV, Tu = 150°C
less Gate-to-Source Forward Leakage - - -100 n A Veg = 20V
Gate-to-Source Reverse Leakage - - 100 Ws = -20V
09 Total Gate Charge - - 32 ID = -9.6A
Qgs Gate-to-Source Charge - - 7.1 nC VDS = -44V
di Gate-ttyor) ("Miller") Charge - -- 15 Ws = -10V, See Fig. 6 and 13 3)
taon) Turn-On Delay Time - 12 - VDD = -28V
tr Rise Time - 28 - ns ID = -9.6A
td(0ff) Turn-Off Delay Time - 20 - Ro = 2.69
t, Fall Time - 16 - RD = 2.89, See Fig. 10 ©
. Between lead, D
k Internal Drain Inductance - 4.5 - 6mm (0.25in.) £55)
Ls Internal Source Inductance - 7 5 - from package Ci a
' and center of die contacts s
Ciss Input Capacitance - 650 - Ws = 0V
Coss Output Capacitance - 270 - pF VDs = -25V
Crss Reverse Transfer Capacitance - 120 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - -18 MOSFET symbol C)
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse 6
(Body Diode) (D - - -64 p-n junction diode. S
VSD Diode Forward Voltage - - -1.6 V Tu = 25''C, ls = -9.6A, l/ss = 0V 6)
trr Reverse Recovery Time - 51 77 ns Tu = 25''C, IF = -9.6A
Qrr Reverse RecoveryCharge - 110 160 nC di/dt = 100A/ps 6)
ton Forward Turn-On Time Intrinsic turn-m time is negligible (turn-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting Tu-- 25"C, L = 3.2mH
Rs = 25f2, IAS = -9.6A. (See Figure 12)
© Iso 5-9.6A. di/dt s 290A/ps, VDD S V(BRpgs,
TJS 150°C
" When mounted on 1" square PCB (FR-4 or G-10 Material ) .
C4) Pulse width E 300ps; duty cycle s 2%.
©This is applied for I-PAK, Ls of D-PAK is measured between
lead and center of die contact
For recommended footprint and soldering techniqu es refer to application note #AN-994
© 2012 International Rectifier
November12th , 2012
