IRFS17N20DTRLP ,200V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters200V 0.17Ω 16A Lead-FreeBenefits ..
IRFS17N20DTRR ,200V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD- 93902AIRFB17N20D IRFS17N20DSMPS MOSFET IRFSL17N20D®HEXFET Power MOSFET
IRFS23N15D ,150V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsV R max IDSS DS(on) Dl High frequency DC-DC converters 150V 0.090Ω 23ABenefitsl Low Gat ..
IRFS23N20D ,200V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsV R max IDSS DS(on) Dl High frequency DC-DC converters200V 0.10Ω 24ABenefitsl Low Gate- ..
IRFS23N20DPBF , SMPS MOSFET
IRFS240A , Advanced Power MOSFET (200V, 0.18ohm, 12.8A)
ISL9003AIEFZ-T , Low Noise LDO with Low IQ and High PSRR
ISL9003AIEMZ-T , Low Noise LDO with Low IQ and High PSRR
ISL9003AIEMZ-T , Low Noise LDO with Low IQ and High PSRR
ISL9003AIENZ-T , Low Noise LDO with Low IQ and High PSRR
ISL9005AIRFZ-T , LDO with Low ISUPPLY, High PSRR
ISL9007IUKZ , High Current LDO with Low IQ and High PSRR
IRFS17N20DTRLP
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier
Applications
q High frequency DC-DC converters
o Lead-Free
Benefits
0 Low Gate-to-Drain Charge to Reduce
Switching Losses
q Fully Characterized Capacitance Including
Effective Coss to Simplify Design, (See
App. Note AN1001)
. Fully Characterized Avalanche Voltage
and Current
SMPS MOSFET
PD- 95325
IRFB17N20DPbF
IRFS17N20DPbF
lRFSL17N20DPbF
HEXFET® Power MOSFET
RDS(on) max
200V 0.179
"s, N. q
TO-220AB D2Pak TO-262
IRFB17N20D IRFS17N20D IRFSL17N20D
Absolute Maximum Ratings
Parameter Max. Units
ID © Tc = 25°C Continuous Drain Current, Vas @ 10V 16
ID © To = 100°C Continuous Drain Current, I/ss © 10V 12 A
IDM Pulsed Drain Current (D 64
PD @TA = 25°C Power Dissipation (D 3.8 W
PD @TC = 25°C Power Dissipation 140
Linear Derating Factor 0.90 W/°C
l/ss Gate-to-Source Voltage t 30 V
dv/dt Peak Diode Recovery dv/dt © 2.7 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw© 10 lbf-in (1.1N0m)
Typical SMPS Topologies
0 Telecom 48V input Forward Converter
Notes (D through s are on page 11
1
6/1/04
IRFB/llRFS/lRFSL17N20DPbF
International
Static © To = 25''C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 - - V l/ss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.25 - V/°C Reference to 25°C, ID = 1mA ©
Rosmn) Static Drain-to-Source On-Resistance - 0.17 Q Vias = 10V, ID = 9.8A co
Vegan) Gate Threshold Voltage 3.0 - 5.5 V Vros = Vas, ID = 250PA
loss Drain-to-Source Leakage Current - - 25 pA VDS = 200V, Vss = 0V
- - 250 vDs = 160V, Vos = ov, To = 150°C
lass Gate-to-Source Forward Leakage - - 100 n A Vas = 30V
Gate-to-Source Reverse Leakage - - -100 Vss = -30V
Dynamic © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gis Forward Transconductance 5.3 - - S VDs = 50V, ID = 9.8A
Qg Total Gate Charge - 33 50 ID = 9.8A
Qgs Gate-to-Source Charge - 8.4 13 nC Vos = 160V
di Gate-to-Drain ("Miller") Charge - 16 24 Vas = 10V, ©©
td(on) Turn-On Delay Time - 11 - VDD = 100V
tr Rise Time - 19 - ns ID = 9.8A
td(0ff) Turn-Off Delay Time - 18 - Rs = 5.19
tt Fall Time - 6.6 - Vss = 10V (D
Ciss Input Capacitance - 1100 - Viss = 0V
Coss Output Capacitance - 190 - Vos = 25V
Crss Reverse Transfer Capacitance - 44 - pF f = 1.0MHz©
COSS Output Capacitance - 1340 - Vas = 0V, I/os = 1.0V, f = 1.0MHz
Coss Output Capacitance - 76 - Vias = 0V, Vos = 160V, f = 1.0MHz
Cass eff. Effective Output Capacitance - 130 - Vias = 0V, l/ras = 0V to 160V ©
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy©© - 240 ml
IAR Avalanche Current0) - 9.8 A
EAR Repetitive Avalanche Energy© - 14 mJ
Thermal Resistance
Parameter Typ. Max. Units
Rax; Junction-to-Case - 1 .1
Recs Case-to-Sink, Flat, Greased Surface © 0.50 - °C/W
RwA Junction-to-Ambient© - 62
RNA Junction-to-AmbientCD - 4O
iode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 16 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - -- 6 4 integral reverse G
(Body Diode) COO) p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 9.8A, VGS = 0V 6)
trr Reverse Recovery Time - 160 240 ns Tu = 25°C, IF = 9.8A
a,, Reverse RecoveryCharge - 900 1350 nC di/dt = 100A/ps (9
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
2
