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IRFS31N20DTRLPIORN/a4719avai200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package


IRFS31N20DTRLP ,200V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsHEXFET Power MOSFET High Frequency DC-DC converters Lead-FreeV R max IDSS DS(on) D20 ..
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IRFS31N20DTRLP
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
PD - 94946
International
. . SMPS MOSFET IRFB31N20DPbF
TOR Rectifier IRFS31N20DPbF
IRFSL31N20DPbF
Applications HEXFETO Power MOSFET
o High Frequency DC-DC converters
o Lead-Free VDSS RDS(on) max ID
200V 0.082Q 31A
Benefits
0 Low Gate to Drain to Reduce Switching
Losses
. Fully Characterized Capacitance Including " la):):) l t:fis'r,
Effective COSS to Simplify Design,(See 'R8(c'f' ' 'itj'rti'
AN 1001) 'ti):, £1
q Fully Characterized Avalanche Voltage
TO-220AB D2Pak TO-262
and Current
IRFB31N20DPbF IRFS31N20DPbF IRFSL31N20DPbF
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vas @ 10V 31
ID @ To = 100°C Continuous Drain Current, Vas @ 10V 21 A
IDM Pulsed Drain Current Ci) 124
Po @TA = 25°C Power Dissipation © 3.1 W
PD @Tc = 25°C Power Dissipation 200
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage * 30 V
dv/dt Peak Diode Recovery dv/dt © 2.1 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range =
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torqe, 6-32 or M3 screw© 10 lbf-in (1.1N-m)
Applicable Off Line SMPS Topologies
. Telecom 48V Input DC/DC Active Clamp Reset Forward Converter
Notes Ci) through © are on page 11
1
3/1/04

IRFB/S/SL31N20DPbF
International
Static @ To = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
V(BRyoss Drain-to-Source Breakdown Voltage 200 - - V Vss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.25 - V/°C Reference to 25°C, ID = 1mA
Rpm") Static Drain-to-Source On-Resistance - - 0.082 Q l/ss = 10V, ID = 18A ©
VGS(1h) Gate Threshold Voltage 3.0 - 5.5 V Vos = Vas, ID = 250pA
loss Drain-to-Source Leakage Current T, : 22550 PA VS: : 'eg', V2: : 3x111] = 150°C
less Gate-to-Source Forward Leakage - - 100 n A Vss = 30V
Gate-to-Source Reverse Leakage - - -100 Ves = -30V
Dynamic © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
grs Forward Transconductance 17 - - S Vos = 50V, ID = 18A
09 Total Gate Charge - 70 107 ID = 18A
093 Gate-to-Source Charge - 18 23 nC Vos = 160V
di Gate-to-Drain ("Miller") Charge - 33 65 Vas = 10V ©
td(an) Turn-On Delay Time - 16 - VDD = 100V
t, Rise Time - 38 - ns [.3 = 18A
tdmff) Turn-Off Delay Time - 26 - Rs = 2.59
tf Fall Time - 10 - RD = 5.49, (D
Ciss Input Capacitance - 2370 - Vss = 0V
Coss Output Capacitance - 390 - Vos = 25V
Crss Reverse Transfer Capacitance - 78 - pF f = 1.0MH2
Coss Output Capacitance - 2860 - Vss = 0V, VDS = 1.0V, f = 1.0MHz
Cass Output Capacitance - 150 - l/tss = 0V, Vos = 160V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 170 - Vss = 0V, VDs = 0V to 160V co
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 420 mJ
IAR Avalanche Current© - 18 A
EAR Repetitive Avalanche Energy© - 2O mJ
Thermal Resistance
Parameter Typ. Max. Units
RQJC Junction-to-Case - 0.75
Recs Case-to-Sink, Flat, Greased Surface © 0.50 - °C/W
RNA Junction-to-Ambient© - 62
ReJA Junction-to-Ambient® - 40
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 31 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) OD - - 124 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 18A, Vss = 0V (D
tn Reverse Recovery Time - 200 300 ns Tu = 25°C, IF = 18A
Qrr Reverse RecoveryCharge - 1.7 2.6 pC di/dt = 100A/ps (9
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
2

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